Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.

Abstract: A gas sensor includes a multi-wafer stack of a plurality of layers and a measurement chamber. The plurality of layers includes a first layer comprising a sensor element that has a microelectromechanical system (MEMS) membrane; and a second layer comprising an emitter element configured to emit electromagnetic radiation. The measurement chamber is interposed between the first layer and the second layer. The measurement chamber is configured to receive a measurement gas and further receive the electromagnetic radiation emitted by the emitter element as the electromagnetic radiation travels along a radiation path from a first end of the measurement chamber to a second end of the measurement chamber that is opposite to the first end.

Abstract: A magnetic field sensor package comprises a chip carrier, a magnetic field sensor which is arranged on the chip carrier and designed to detect a magnetic field, an integrated circuit which is arranged on the chip carrier and designed to logically process sensor signals provided by the magnetic field sensor, and at least one integrated passive component which is electrically coupled to at least one of the magnetic field sensor or the integrated circuit.

Abstract: Embodiments relate to integrated sonic sensors having a transmitter, a receiver and driver electronics integrated in a single, functional package. In one embodiment, a piezoelectric signal transmitter, a silicon microphone receiver and a controller/amplifier chip are concomitantly integrated in a semiconductor housing. The semiconductor housing, in embodiments, is functional in that at least a portion of the housing can comprise the piezoelectric element of the transmitter, with an inlet aperture opposite the silicon microphone receiver.

Abstract: Examples provided herein are associated with a molded lead frame of a sensor package. An example sensor package may include a molded lead frame that includes an opening in the molded lead frame, wherein the opening extends from a mount-side of the molded lead frame to a chip-side of the molded lead frame, wherein the chip-side of the molded lead frame is opposite the mount-side; and a sensor mounted to the chip-side of the molded lead frame.

Abstract: A photoacoustic sensor device may include a housing and first and second ceramic cavity packages disposed in the housing. The first ceramic cavity package may include a first sidewall having a first set of electrical contact elements, a first cavity structure, and a light source electrically coupled to the first set of electrical contact elements. The second ceramic cavity package may include a second sidewall having a second set of electrical contact elements, a second cavity structure, and a photoacoustic detector electrically coupled to the second set of electrical contact elements. The first and second ceramic cavity packages may be arranged such that the light source and the photoacoustic detector face one another, and oriented such that the first and second sets of electrical contact elements align with electrical contact points of a PCB when the photoacoustic sensor device is positioned over the PCB for coupling to the PCB.

Abstract: Shown is a wafer arrangement for a gas sensor including a first substrate and a sescond substrate. The first substrate includes a MEMS membrane associated with a sensor element and an emitter element configured to emit electromagnetic radiation. The second substrate is arranged on top of the first substrate and defines at least a portion of a chamber disposed adjacent to the MEMS membrane.

Abstract: A method is disclosed. In one example, the method includes bonding a first panel of a first material to a base panel in a first gas atmosphere, wherein multiple hermetically sealed first cavities encapsulating gas of the first gas atmosphere are formed between the first panel and the base panel. The method further includes bonding a second panel of a second material to at least one of the base panel and the first panel, wherein multiple second cavities are formed between the second panel and the at least one of the base panel and the first panel.

Abstract: A photo-acoustic gas sensor may include a detector component. The detector component includes a package that defines a reference volume. The reference volume houses a reference gas. The detector component includes a pressure sensing element to measure an amount of pressure in the reference volume. The amount of pressure in the reference volume depends on absorption of a wavelength of light by the reference gas in the reference volume. A sensitivity of the pressure sensing element when measuring the amount of pressure in the reference volume depends on a length of a reference path associated with the reference volume. The detector component includes a reference path structure that causes the length of the reference path to be less than or equal to 0.5 millimeters.

Abstract: A method of producing packaged semiconductor devices includes providing a first packaging substrate panel, providing a second packaging substrate panel, and moving the first and second packaging substrate panels through an assembly line that comprises a plurality of package assembly tools using a control mechanism. First type packaged semiconductor devices are formed on the first packaging substrate panel and second type packaged semiconductor devices are formed on the second packaging substrate panel. The control mechanism moves both of the first and packaging substrate panels through the assembly line in a non-linear manner. The first and second packaged semiconductor devices differ with respect to at least one of: lead configuration, and encapsulant configuration.

Abstract: Examples provided herein are associated with a molded lead frame of a sensor package. An example sensor package may include a molded lead frame that includes an opening in the molded lead frame, wherein the opening extends from a mount-side of the molded lead frame to a chip-side of the molded lead frame, wherein the chip-side of the molded lead frame is opposite the mount-side; and a sensor mounted to the chip-side of the molded lead frame.

Abstract: A microelectromechanical system (MEMS) package assembly and a method of manufacturing the same are provided for Light Detection and Ranging (LIDAR) systems. A MEMS package assembly includes a MEMS chip including a front-side surface and a back-side surface, the MEMS chip further including a LIDAR MEMS mirror configured to receive light and reflect the light as reflected light; and a cavity cap disposed on the front-side surface of the MEMS chip and forms a cavity that surrounds the LIDAR MEMS mirror such that the LIDAR MEMS mirror is sealed from an environment, the cavity cap having an asymmetrical shape such that a transmission surface of the cavity cap, through which the light and the reflected light is transmitted, is tilted at a tilt angle with respect to the front-side surface of the MEMS chip.

Abstract: A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (IDP) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the IPD chip and the discrete passive devices are arranged within the housing.

Abstract: The present disclosure is related to a photoacoustic sensor modular assembly. An example interconnect module includes a support structure configured to be situated between an emitter module of the photoacoustic sensor and a detector module of the photoacoustic sensor. The emitter module may include an emitter component and the detector module may include a detector component. The interconnect module may include a conductive element configured to connect to at least one of the emitter component or the detector component.

Abstract: A method for producing a MEMS sound transducer element includes, inter alia, providing a first substrate. The first substrate has a first substrate side, an opposite second substrate side and a membrane layer arranged on the first substrate side. A further method step includes performing a first etching from the second substrate side in a first surface section that is situated opposite the membrane layer, as far as a first depth. A further method step includes performing a second etching of the first substrate from the second substrate side in a second surface section in order to expose the membrane layer in the first surface section and to produce a back volume for the membrane layer, where the second surface section is larger than the first surface section and includes the first surface section.

Abstract: An apparatus for in-situ calibration of a photoacoustic sensor is provided. The apparatus includes a light emitter to emit light along a transmission path to a gas and an acoustic sensor element configured to detect an acoustic signal emitted from the gas based on the received light. Furthermore, the apparatus includes a sensing unit configured to detect the light transmitted along the transmission path and to provide an output signal, and a calibration unit to receive the output signal from the sensing unit and to provide a calibration information based on the output signal received from the sensing unit.

Abstract: Photoacoustic gas sensor having a light pulse emitter, a microphone in a reference gas housing having a reference gas, and a sample gas housing to be filled with a gas to be analyzed. A wall separates the sample gas housing from the reference gas housing, and has a transparent region that is transparent to light within a frequency range of emitted light pulses. Remaining inner walls of the sample gas housing have a reflecting surface that reflect light pulses emitted by the emitter so that a portion of the light pulses not absorbed by the gas to be analyzed pass through the transparent region into the reference gas volume. The microphone generates a sensor signal indicating information on an acoustic wave caused by the light pulses interacting with the reference gas after crossing the gas to be analyzed.

Abstract: A detector module is disclosed. In one example, the detector module is for a photo-acoustic gas sensor and comprises a first substrate made of a semiconductor material and comprising a first surface and a second surface opposite to the first surface, a second substrate comprising a third surface, a fourth surface opposite to the third surface, and a first recess formed in the fourth surface. The second substrate is connected with its fourth surface to the first substrate so that the first recess forms an airtight-closed first cell which is filled with a reference gas and a pressure sensitive element comprising a membrane disposed in contact with the reference gas. The detector module is further configured such that a beam of light pulses passes through the first substrate and thereby enters the first cell.

Abstract: A method of producing packaged semiconductor devices includes providing a first packaging substrate panel. A second packaging substrate panel is provided. The first and second packaging substrate panels are moved through an assembly line that includes a plurality of package assembly tools using a control mechanism. First type packaged semiconductor devices are formed on the first packaging substrate panel and second type packaged semiconductor devices are formed on the second packaging substrate panel. The second type packaged semiconductor device is different than the first type packaged semiconductor device. The control mechanism moves both of the first and packaging substrate panels through the assembly line in a non-linear manner.

Abstract: A sensor device including a leadframe is disclosed. A sensor chip is arranged on the leadframe, an encapsulation material is arranged on a main surface and a side surface of the sensor chip, and a signal port arranged at a side surface of the sensor device. The side surface of the sensor device extends between opposing main surfaces of the sensor device, wherein one of the main surfaces is a mounting surface of the sensor device. A channel extends from the signal port to a sensing structure of the sensor chip.