Patents by Inventor Ho Sang Yoon
Ho Sang Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10572313Abstract: A container-based distributed application management system includes a coordinator daemon configured to store and manage cluster setting information corresponding to a cluster formed by a plurality of distributed applications, the plurality of distributed applications configured to be separately executed in a plurality of containers; and a plurality of agent daemons configured to be separately installed and executed in the plurality of containers, and receive the cluster setting information from the coordinator daemon to execute at least one of the plurality of distributed applications installed in the plurality of containers, wherein the coordinator daemon and the plurality of agent daemons are implemented by using one or more hardware processors.Type: GrantFiled: October 24, 2017Date of Patent: February 25, 2020Assignee: SAMSUNG SDS CO., LTD.Inventors: Ho-Sang Yoon, Moon-Hyuk Choi, Hee-Chang Lee
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Publication number: 20190286820Abstract: An apparatus and method for detecting a container rootkit are provided. The apparatus for detecting a container rootkit according to one example embodiment of the present disclosure includes a detection target acquirer configured to acquire, as a detection target, a copy of a kernel module program configured to be executed on a host computer system, wherein the host computer system is configured to run one or more containers; and a rootkit detector configured to detect whether a rootkit is present in the detection target based on whether the detection target contains program code for modifying operation of a pre-defined kernel function.Type: ApplicationFiled: March 15, 2018Publication date: September 19, 2019Applicants: SAMSUNG SDS CO., LTD., BOARD OF REGENTS, UNIVERSITY OF TEXAS SYSTEMInventors: Ho Sang YOON, Young IL JUNG, Mi Young LEE, Wonjun LEE, Nidhin ALEXANDER
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Publication number: 20180113750Abstract: A container-based distributed application management system includes a coordinator daemon configured to store and manage cluster setting information corresponding to a cluster formed by a plurality of distributed applications, the plurality of distributed applications configured to be separately executed in a plurality of containers; and a plurality of agent daemons configured to be separately installed and executed in the plurality of containers, and receive the cluster setting information from the coordinator daemon to execute at least one of the plurality of distributed applications installed in the plurality of containers, wherein the coordinator daemon and the plurality of agent daemons are implemented by using one or more hardware processors.Type: ApplicationFiled: October 24, 2017Publication date: April 26, 2018Applicant: SAMSUNG SDS CO., LTD.Inventors: Ho-Sang YOON, Moon-Hyuk CHOI, Hee-Chang LEE
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Publication number: 20170079764Abstract: The present invention relates to a filler for removing wrinkles, comprising: a slim and long tubular main body penetrating through the subcutaneous tissue; and a through-hole provided so as to enable the cells of the peripheral tissue of the main body to move to the inside of the main body so as to form a fibrous tissue, the through-hole being formed so as to communicate with a hollow portion formed inside the main body in the longitudinal direction from the outer peripheral surface of the main body. The filler for removing wrinkles according to the present invention is not deformed or moved by the pressure of a skin or external forces after being inserted into the subcutaneous tissue, and can be applied to various body parts having wrinkles, including body parts having deep wrinkles so as to achieve (semi)permanent effects.Type: ApplicationFiled: December 7, 2016Publication date: March 23, 2017Inventors: Hoon Bum LEE, Won Seok PARK, Hyuk KIM, Ho Sang YOON, Jang Yeon LEE
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Patent number: 9041048Abstract: The semiconductor light emitting device according to embodiments has a first conductive type semiconductor layer, an un-doped semiconductor layer under the first conductive type semiconductor layer, and a plurality of semiconductor structures in the un-doped semiconductor layer.Type: GrantFiled: September 2, 2009Date of Patent: May 26, 2015Assignee: LG INNOTEK CO., LTD.Inventor: Ho Sang Yoon
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Publication number: 20150119985Abstract: The present invention relates to a filler for removing wrinkles, comprising: a slim and long tubular main body penetrating through the subcutaneous tissue; and a through-hole provided so as to enable the cells of the peripheral tissue of the main body to move to the inside of the main body so as to form a fibrous tissue, the through-hole being formed so as to communicate with a hollow portion formed inside the main body in the longitudinal direction from the outer peripheral surface of the main body. The filler for removing wrinkles according to the present invention is not deformed or moved by the pressure of a skin or external forces after being inserted into the subcutaneous tissue, and can be applied to various body parts having wrinkles, including body parts having deep wrinkles so as to achieve (semi)permanent effects.Type: ApplicationFiled: May 10, 2013Publication date: April 30, 2015Applicants: HB MEDICALS, CO., LTD., PACIFICPHARMA CORPORATIONInventors: Hoon Bum Lee, Won Seok Park, Hyuk Kim, Ho Sang Yoon, Jang Yeon Lee
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Patent number: 9012944Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.Type: GrantFiled: August 16, 2013Date of Patent: April 21, 2015Assignee: LG Innotek Co., Ltd.Inventors: Ho Sang Yoon, Sang Kyun Shim
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Patent number: 8937320Abstract: Provided are a light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device includes: an n-type semiconductor layer including a first area and a second area in a plane; an active layer disposed on the n-type semiconductor layer in the first area; an electron barrier layer disposed on the active layer in the first area; and a p-type semiconductor layer disposed on the electron barrier layer in the first area.Type: GrantFiled: February 6, 2012Date of Patent: January 20, 2015Assignee: LG Innotek Co., Ltd.Inventors: Ho Sang Yoon, Sang Kyun Shim
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Patent number: 8754436Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate under a light emitting structure having an active layer. A bottom surface of the substrate includes a first portion and a second portion around the first portion, the first portion includes a first recess and the second portion includes a second recess, and the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate. The first recess and the second recess have a different depth from the bottom surface of the substrate, the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and the first recess and the second recess has a depth smaller than a thickness of the substrate.Type: GrantFiled: May 6, 2013Date of Patent: June 17, 2014Assignee: LG Innotek Co., Ltd.Inventor: Ho Sang Yoon
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Publication number: 20130334550Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.Type: ApplicationFiled: August 16, 2013Publication date: December 19, 2013Applicant: LG INNOTEK CO., LTD.Inventors: Ho Sang YOON, Sang Kyun SHIM
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Patent number: 8592822Abstract: Provided are a light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device includes: an n-type semiconductor layer including a first area and a second area in a plane; an n-type contact layer disposed on the n-type semiconductor layer and has a first thickness in the first area and a second thickness in the second area; an undoped semiconductor layer disposed on the n-type contact layer having the first thickness in the first area; an active layer disposed on the undoped semiconductor layer in the first area; a p-type semiconductor layer disposed on the active layer in the first area; a first electrode disposed on the n-type contact layer having the second thickness in the second area; and a second electrode disposed on the p-type semiconductor layer.Type: GrantFiled: February 2, 2012Date of Patent: November 26, 2013Assignee: LG Innotek Co., Ltd.Inventors: Ho Sang Yoon, Sung Hoon Jung
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Patent number: 8563999Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.Type: GrantFiled: November 18, 2010Date of Patent: October 22, 2013Assignee: LG Innotek Co., Ltd.Inventors: Ho Sang Yoon, Sang Kyun Shim
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Publication number: 20130240833Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate under a light emitting structure having an active layer. A bottom surface of the substrate includes a first portion and a second portion around the first portion, the first portion includes a first recess and the second portion includes a second recess, and the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate. The first recess and the second recess have a different depth from the bottom surface of the substrate, the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and the first recess and the second recess has a depth smaller than a thickness of the substrate.Type: ApplicationFiled: May 6, 2013Publication date: September 19, 2013Applicant: LG INNOTEK CO., LTD.Inventor: Ho Sang YOON
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Patent number: 8436384Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.Type: GrantFiled: February 16, 2011Date of Patent: May 7, 2013Assignee: LG Innotek Co., Ltd.Inventor: Ho Sang Yoon
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Patent number: 8399948Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first conductive type semiconductor layer; an active layer including a barrier layer and a well layer alternately disposed on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer. At least one well layer includes an indium cluster having a density of 1E11/cm2 or more.Type: GrantFiled: November 12, 2010Date of Patent: March 19, 2013Assignee: LG Innotek Co., Ltd.Inventors: Ho Sang Yoon, Sang Kyun Shim
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Patent number: 8377801Abstract: A method of fabricating a nitride semiconductor light-emitting device providing a nitride semiconductor light-emitting device with a GaN layer, bringing the nitride semiconductor light-emitting device into contact with hydrogen separation metal, vibrating the nitride semiconductor light-emitting device and the hydrogen separation metal, removing hydrogen from the GaN layer of the nitride semiconductor light-emitting device and separating the hydrogen separation metal from the nitride semiconductor light-emitting device.Type: GrantFiled: February 1, 2010Date of Patent: February 19, 2013Assignee: LG Innotek Co., Ltd.Inventor: Ho Sang Yoon
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Publication number: 20120223347Abstract: Provided are a light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device includes: an n-type semiconductor layer including a first area and a second area in a plane; an active layer disposed on the n-type semiconductor layer in the first area; an electron barrier layer disposed on the active layer in the first area; and a p-type semiconductor layer disposed on the electron barrier layer in the first area.Type: ApplicationFiled: February 6, 2012Publication date: September 6, 2012Inventors: Ho Sang YOON, Sang Kyun SHIM
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Publication number: 20120126242Abstract: Provided are a light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device includes: an n-type semiconductor layer including a first area and a second area in a plane; an n-type contact layer disposed on the n-type semiconductor layer and has a first thickness in the first area and a second thickness in the second area; an undoped semiconductor layer disposed on the n-type contact layer having the first thickness in the first area; an active layer disposed on the undoped semiconductor layer in the first area; a p-type semiconductor layer disposed on the active layer in the first area; a first electrode disposed on the n-type contact layer having the second thickness in the second area; and a second electrode disposed on the p-type semiconductor layer.Type: ApplicationFiled: February 2, 2012Publication date: May 24, 2012Inventors: Ho Sang YOON, Sung Hoon Jung
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Publication number: 20110175120Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.Type: ApplicationFiled: November 18, 2010Publication date: July 21, 2011Inventors: Ho Sang Yoon, Sang Kyun Shim
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Patent number: 7977695Abstract: Disclosed is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a first concave-convex pattern, a second concave-convex pattern on at least one pattern of the first concave-convex pattern, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.Type: GrantFiled: September 19, 2008Date of Patent: July 12, 2011Assignee: LG Innotek Co., Ltd.Inventors: Sang Kyun Shim, Ho Sang Yoon