Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.

Abstract: A conditioning disk replacement apparatus includes; a detacher configured to separate a conditioning disk from to a holder, a transfer part configured to transfer the conditioning disk, and a container configured to store the conditioning disk. The detacher includes a detachment body and a rotary part coupled to the detachment body, the rotary part includes a key protruding outward from the rotary part in a first horizontal direction, and the rotary part is configured to rotate about a central axis extending in the first horizontal direction.

Abstract: A wafer processing method includes supplying a first process gas into a wafer processing apparatus, lowering a temperature of the wafer, generating plasma using the first process gas, supplying a second process gas and mixing the second process gas with the plasma, performing a plasma process on the wafer using the plasma and the second process gas, and performing an annealing process on the wafer on which the plasma process has been performed. The lowering of the temperature of the wafer includes increasing an internal pressure of the wafer processing apparatus.

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.

Abstract: Disclosed are a method for cleaning a substrate, an apparatus for cleaning a substrate, and a method for fabricating a semiconductor device using the same. The method may include cleaning a substrate in a wet process, providing a supercritical fluid onto the substrate to remove moisture from the substrate, and cleaning the substrate in a dry process to remove defect particles from a substrate, which are produced by the supercritical fluid.

Abstract: The present invention relates to a spark discharge generator. The spark discharge system of the present invention includes a plurality of columnar electrodes and a ground plate having a plurality of outlet holes at positions corresponding to the columnar electrodes. The use of the spark discharge generator enables the production of a three-dimensionally shaped nanostructure array on a large area in a uniform and rapid manner.

Abstract: The present invention relates to a process for preparing an electronic device comprising at least one layer selected from the group consisting of a upper electrode layer, a lower electrode layer, an organic layer and an inorganic layer, which comprises a step of introducing a nanoparticle layer or a nano/micro structure layer by adhering charged nanoparticles, before, after or during forming the layer.

Abstract: The present invention relates to a process for producing a 3-dimensional structure assembled from nanoparticles by using a mask having a pattern of perforations, which comprises the steps of: in a grounded reactor, placing a mask having a pattern of perforations corresponding to a determined pattern at a certain distance above a substrate to be patterned, and then applying voltage to the substrate to form an electrodynamic focusing lens; and introducing charged nanoparticles into the reactor, the charged particles being guided to the substrate through the pattern of perforations so as to be selectively attached to the substrate with 3-dimensional shape. According to the process of the present invention, a 3-dimensional structure of various shapes can be produced without producing noise pattern, with high accuracy and high efficiency.

Abstract: The present invention relates to a spark discharge generator. The spark discharge system of the present invention includes a plurality of columnar electrodes and a ground plate having a plurality of outlet holes at positions corresponding to the columnar electrodes. The use of the spark discharge generator enables the production of a three-dimensionally shaped nanostructure array on a large area in a uniform and rapid manner.

Abstract: The present invention relates to a method for manufacturing a nanoparticle structure by focused patterning of nanoparticles, and a nanoparticle structure obtained by the above method. The method of the present invention is characterized by comprising the steps of: first of all, accumulating ions generated by corona discharge on a substrate where a micro/nano pattern is formed; inducing charged nanoparticles and ions generated by spark discharge to the micro/nano pattern of the substrate; and then focused depositing on the micro/nano pattern. According to the method of the present invention, an elaborate nanoparticle structure, which has 3-dimensional shape having complicated structure, can be effectively manufactured.

Abstract: The present invention relates to a process for producing a 3-dimensional structure assembled from nanoparticles by using a mask having a pattern of perforations, which comprises the steps of: in a grounded reactor, placing a mask having a pattern of perforations corresponding to a determined pattern at a certain distance above a substrate to be patterned, and then applying voltage to the substrate to form an electrodynamic focusing lens; and introducing charged nanoparticles into the reactor, the charged particles being guided to the substrate through the pattern of perforations so as to be selectively attached to the substrate with 3-dimensional shape. According to the process of the present invention, a 3-dimensional structure of various shapes can be produced without producing noise pattern, with high accuracy and high efficiency.

Abstract: The present invention relates to a process for preparing an electronic device comprising at least one layer selected from the group consisting of a upper electrode layer, a lower electrode layer, an organic layer and an inorganic layer, which comprises a step of introducing a nanoparticle layer or a nano/micro structure layer by adhering charged nanoparticles, before, after or during forming the layer.