Abstract: A human-machine interaction method for a storage device inside a refrigerator, and a refrigerator are provided. The storage device is arranged in a storage compartment of the refrigerator, and the storage device is provided with an operation panel. An operation surface of the operation panel is provided with a knob module having a display screen, and a touch-sensitive key module. The human-machine interaction method includes: acquiring a startup trigger signal of the operation panel; acquiring an operation instruction received by the knob module and/or the touch-sensitive key module; and making a response to the operation instruction according to a preset interaction solution, and driving the display screen to display a corresponding interface. A user can adjust the functions of the refrigerator through the knob module and the touch-sensitive key module simply and conveniently.

Abstract: In a file sharing system, a key manager unit realizes a correspondence between the first user identifier and the first public key in response to a registration request of the first user, generates a first key material for encrypting the first file into a first encrypted file, and generates a first credential according to the first user identifier, the first file identifier, the first public key and the first key material after receiving an access-right claim request to the first file from the first user. A file storage unit stores the first encrypted file and the first credential. The first user uses the first user identifier, the first file identifier and the first private key to retrieve the first key material out of the first credential, and uses the first key material to decrypt the first encrypted file into the first file.

Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Abstract: An integrated circuit (IC) structure includes a substrate, an interconnect structure, metal lines, a liner, a protecting layer, and a nitride-free passivation layer. The interconnect structure is over the substrate. The metal lines are over the interconnect structure. The liner is conformally formed on the metal lines. The protecting layer is over the liner. The nitride-free passivation layer continuously extends from the liner to the protecting layer and forms an interface with the liner.

Abstract: A method of aligning two wafers during a bonding process includes aligning a first wafer having a plurality of alignment markings with a second wafer having a plurality of alignment markings. The method further includes placing a plurality of flags between the first wafer and the second wafer. The method further includes detecting movement of the plurality of flags with respect to the first wafer and the second wafer using at least one sensor. The method further includes determining whether the wafers remain aligned within an alignment tolerance based on the detected movement of the plurality of flags relative to the first wafer and the second wafer.

Abstract: The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.

Abstract: An integrated circuit (IC) structure includes a substrate, a transistor, an interconnect structure, a plurality of metal lines, an oxide liner, a passivation layer, and a nitride layer. The transistor is on the substrate. The interconnect structure is over the transistor. The metal lines is on the interconnect structure. The oxide liner is over the plurality of metal lines. The passivation layer is over the oxide liner and is more porous than the passivation layer. The nitride layer is over the passivation layer.

Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Abstract: A high-density connecting device is provided. The high-density connecting device includes a first connecting module and a second connecting module. The first connecting module includes a first casing assembly, a first circuit board, and a first socket connector. The second connecting module includes a second casing assembly, a second circuit board, and a second socket connector. When the first connecting module is mated with the second connecting module, a junction end of the first circuit board and a junction end of the second circuit board are inserted into the first socket connector and the second socket connector, respectively, so that the junction end of the first circuit board and the junction end of the second circuit board are electrically connected to the first socket connector and the second socket connector, respectively.

Abstract: A high-density connecting device is provided. The high-density connecting device includes a first connecting module and a second connecting module. The first connecting module includes a first casing assembly, a first circuit board, and a first socket connector. The second connecting module includes a second casing assembly, a second circuit board, and a second socket connector. When the first connecting module is mated with the second connecting module, a junction end of the first circuit board and a junction end of the second circuit board are inserted into the first socket connector and the second socket connector, respectively, so that the junction end of the first circuit board and the junction end of the second circuit board are electrically connected to the first socket connector and the second socket connector, respectively.

Abstract: A connector with a direct locking and a rotational pre-ejection function is provided. The connector includes an insulated body, a plurality of terminals, an inner shell, an outer shell, a snap ring, a plurality of fasteners, an ejector, a first elastic element, and a second elastic element. The outer shell has a cam surface, the ejector has an abutting portion, and the abutting portion is in contact with the cam surface. When the connector and a mating connector are inserted into each other, snap bodies of the fasteners and fastener bodies of the mating connector can be snapped into each other to be directly locked. When the connector and the mating connector are to be separated from each other, the snap bodies of the fasteners and the fastener bodies of the mating connector can be separated from each other to be directly unlocked.

Abstract: A connector with a direct locking and a rotational pre-ejection function is provided. The connector includes an insulated body, a plurality of terminals, an inner shell, an outer shell, a snap ring, a plurality of fasteners, an ejector, a first elastic element, and a second elastic element. The outer shell has a cam surface, the ejector has an abutting portion, and the abutting portion is in contact with the cam surface. When the connector and a mating connector are inserted into each other, snap bodies of the fasteners and fastener bodies of the mating connector can be snapped into each other to be directly locked. When the connector and the mating connector are to be separated from each other, the snap bodies of the fasteners and the fastener bodies of the mating connector can be separated from each other to be directly unlocked.

Abstract: A semiconductor device includes a first conductive feature and a second conductive feature. A first passivation layer is positioned between the first conductive feature and the second conductive feature. A second passivation layer is positioned between the first conductive feature and the second conductive feature and over the first passivation layer. A lowermost portion of an interface where the first passivation layer contacts the second passivation layer is positioned below 40% or above 60% of a height of the first conductive feature.

Abstract: The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.

Abstract: A connector with a direct locking and a rotational pre-ejection function is provided. The connector includes an insulated body, a plurality of terminals, an inner shell, an outer shell, a fastener, an ejector, a first elastic element, and a second elastic element. A plurality of push blocks are disposed in the outer shell, the ejector has a plurality of slope surfaces, and the push blocks are in contact with the slope surfaces, respectively. When the connector and a mating connector are inserted into each other, snap bodies of the fastener and fastener bodies of the mating connector can be snapped into each other to be directly locked. When the connector and the mating connector are to be separated from each other, the outer shell can be rotated to cause the snap bodies to disengage and to cause the push blocks to rotate while in contact with the sloped surfaces to effect ejector rods to move forwardly to eject the mating connector.

Abstract: An integrated circuit (IC) structure includes a substrate, a transistor, an interconnect structure, a plurality of metal lines, an oxide liner, a passivation layer, and a nitride layer. The transistor is on the substrate. The interconnect structure is over the transistor. The metal lines is on the interconnect structure. The oxide liner is over the plurality of metal lines. The passivation layer is over the oxide liner and is more porous than the passivation layer. The nitride layer is over the passivation layer.

Abstract: The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.

Abstract: A semiconductor device includes a first conductive feature and a second conductive feature. A first passivation layer is positioned between the first conductive feature and the second conductive feature. A second passivation layer is positioned between the first conductive feature and the second conductive feature and over the first passivation layer. A lowermost portion of an interface where the first passivation layer contacts the second passivation layer is positioned below 40% or above 60% of a height of the first conductive feature.