Abstract: A single crystal silicon sheet is formed from a polycrystalline sheet by melting a relatively small portion of the sheet at an initial location and defining a single crystallographic orientation for the silicon by placing a small silicon seed crystal in contact with the melted silicon at the initial location. The melted portion is then moved from the initial location throughout the sheet to move impurities in the sheet to the edges of the sheet and to extend the crystallographic orientation of the silicon established at the initial location to the whole sheet, inwardly of the edges. The edges containing impurities and any remaining polycrystalline structure are removed to produce a sheet of single crystal silicon. A polycrystalline sheet may be formed by spreading a slurry of a silicon powder, a binder, and solvent on a surface and allowing the solvent to evaporate to form a sheet. The sheet is moistened to cause it to expand and sheer clear of the surface.