Abstract: A novel fiber optic sensor configuration whose diameter is the same as that of the optical fiber on which it is directly fabricated is introduced. A simple MEMS-compatible fabrication process to accomplish micromachining on the fiber end face has been developed and is detailed. This sensor configuration significantly reduces the size of the sensor and makes the packaging simple and adhesive free. The micromachining process of the present invention also provides for the fabrication of arrays of sensors that would provide two dimensional maps with high spatial resolution of at least one of acoustical vibration, mechanical vibration, pressure, temperature, acceleration, electrostatic fields, magnetic fields or combinations thereof.

Abstract: A method and system for determining a spatially local index of refraction in optical materials is provided. Light, including a near-field intensity, is collected above a surface of the material. A probe is oscillated at a plurality of frequencies and in a substantially perpendicular manner relative to the surface of the material to detect the near-field intensity of the light. A distance of the probe from the surface of the material is modulated. Based on a ratio of the near-field intensity of the light detected at the plurality of frequencies, the local index of refraction is determined.

Abstract: A novel fiber optic sensor configuration whose diameter is the same as that of the optical fiber on which it is directly fabricated is introduced. A simple MEMS-compatible fabrication process to accomplish micromachining on the fiber end face has been developed and is detailed. This sensor configuration significantly reduces the size of the sensor and makes the packaging simple and adhesive free. The micromachining process of the present invention also provides for the fabrication of arrays of sensors that would provide two dimensional maps with high spatial resolution of at least one of acoustical vibration, mechanical vibration, pressure, temperature, acceleration, electrostatic fields, magnetic fields or combinations thereof.

Abstract: A multiple quantum well arrangement which achieves significantly improved third order optical nonlinearity in a semiconductor device by way of spatially periodic electrodes applied to the semiconductor device. The spatial period of the applied electrodes and the resulting exciton confinement dimension is improved over that of previous multiple quantum well structures and to the Bohr radius range of dimensions for the semicondcutor material by way of avRIGHTS OF THE GOVERNMENTThe invention described herein may be manufactured and used by or for the Government of the United States for all governmental purposes without the payment of any royalty.