Patents by Inventor Howard M. Branz
Howard M. Branz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220123158Abstract: A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low dopant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is fanned by diffusion. The nanostructures of the black silicon are formed in a manner that does not result in gold or another high-recombina-tion metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostruc-tures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.Type: ApplicationFiled: December 23, 2021Publication date: April 21, 2022Inventors: Jihun OH, Howard M. BRANZ, Hao-Chih YUAN
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Patent number: 11251318Abstract: A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.Type: GrantFiled: March 8, 2011Date of Patent: February 15, 2022Assignee: Alliance for Sustainable Energy, LLCInventors: Jihun Oh, Howard M. Branz, Hao-Chih Yuan
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Patent number: 9076903Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).Type: GrantFiled: January 8, 2014Date of Patent: July 7, 2015Assignee: Alliance for Sustainable Energy, LLCInventors: Hao-Chih Yuan, Howard M. Branz, Matthew R. Page
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Patent number: 9029792Abstract: An apparatus (200) for detecting slow or thermal neutrons (160). The apparatus (200) includes an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.Type: GrantFiled: September 13, 2013Date of Patent: May 12, 2015Assignee: Alliance for Sustainable Energy, LLCInventors: Pauls Stradins, Howard M. Branz, Qi Wang, Harold R. McHugh
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Patent number: 8987115Abstract: Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.Type: GrantFiled: August 21, 2008Date of Patent: March 24, 2015Assignee: Alliance for Sustainable Energy, LLCInventors: Charles Teplin, Howard M. Branz
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Patent number: 8828765Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).Type: GrantFiled: June 9, 2010Date of Patent: September 9, 2014Assignee: Alliance for Sustainable Energy, LLCInventors: Hao-Chih Yuan, Howard M. Branz, Matthew R. Page
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Publication number: 20140141563Abstract: Systems and Methods for back contact to film silicon on metal for photovoltaic cells are provided. In one embodiment, a method for creating a conductive pathway in a photovoltaic cell comprises: obtaining a layered photovoltaic device comprising: a metal substrate with a crystal orientation; a crystal semiconductor layer with the crystal orientation; and a heteroepitaxially grown buffer layer positioned between the substrate and the crystal semiconductor layer; and forming one or more conductive pathways between the crystal semiconductor layer and the metal substrate, the pathways being through at least a portion of the buffer layer.Type: ApplicationFiled: February 5, 2014Publication date: May 22, 2014Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Howard M. Branz, Charles W. Teplin, Pauls Stradins
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Patent number: 8729798Abstract: Exemplary embodiments are disclosed of anti-reflective nanoporous silicon for efficient hydrogen production by photoelectrolysis of water. A nanoporous black Si is disclosed as an efficient photocathode for H2 production from water splitting half-reaction.Type: GrantFiled: October 28, 2011Date of Patent: May 20, 2014Assignee: Alliance for Sustainable Energy, LLCInventors: Jihun Oh, Howard M. Branz
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Publication number: 20140127850Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).Type: ApplicationFiled: January 8, 2014Publication date: May 8, 2014Applicant: Alliance for Sustainable Energy, LLCInventors: Hao-Chih Yuan, Howard M. Branz, Matthew R. Page
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Publication number: 20140061829Abstract: An apparatus (200) for detecting slow or thermal neutrons (160). The apparatus (200) includes an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.Type: ApplicationFiled: September 13, 2013Publication date: March 6, 2014Applicant: Alliance for Sustainable Energy, LLCInventors: Pauls STRADINS, Howard M. BRANZ, Qi WANG, Harold R. McHUGH
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Publication number: 20130340824Abstract: A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.Type: ApplicationFiled: March 8, 2011Publication date: December 26, 2013Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Jihun Oh, Howard M. Branz, Hao-Chih Yuan
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Patent number: 8569708Abstract: An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.Type: GrantFiled: January 30, 2009Date of Patent: October 29, 2013Assignee: Alliance for Sustainable Energy, LLCInventors: Pauls Stradins, Howard M. Branz, Qi Wang, Harold R. McHugh
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Patent number: 8466447Abstract: A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.Type: GrantFiled: August 6, 2009Date of Patent: June 18, 2013Assignee: Alliance for Sustainable Energy, LLCInventors: Howard M. Branz, Charles Teplin, Pauls Stradins
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Publication number: 20130048065Abstract: A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.Type: ApplicationFiled: August 6, 2009Publication date: February 28, 2013Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Howard M. Branz, Charles Teplin, Pauls Stradins
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Patent number: 8203154Abstract: A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.Type: GrantFiled: May 8, 2003Date of Patent: June 19, 2012Assignee: Alliance for Sustainable Energy, LLCInventors: Qi Wang, James Scott Ward, Jian Hu, Howard M. Branz
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Publication number: 20120024365Abstract: A photovoltaic cell with enhanced transmissivity of infrared radiation. The photovoltaic cell includes a layer of photovoltaic material (403) having a front, light-receiving surface and a back surface. The photovoltaic cell further includes a first anti-reflective coating (ARC) layer (405) provided on (or making up) the front surface of the layer of the photovoltaic material (403) and a second ARC layer (405) provided on (or making up) the back surface of the layer of the photovoltaic material (403). The layer of photovoltaic material (403) may be a silicon substrate, and at least one of the ARC layers (405) may be formed as a black silicon region or layer in the silicon substrate (403). The photovoltaic cell may also include a front grid pattern (401) of electrical conductors (406) applied to the first ARC layer and a back grid pattern (401) of electrical conductors (406) applied to the second ARC layer.Type: ApplicationFiled: July 27, 2010Publication date: February 2, 2012Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Howard M. Branz, Peter Vandermeulen
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Publication number: 20110308615Abstract: Crystal silicon processes and products (100) are disclosed. In any exemplary embodiment, a biaxially textured metal substrate (110) was fabricated by the Rolling-Assisted Biaxially Textured Substrate (RABiTS) process. Electron beam evaporation was used to grow buffer layers (120) heteroepitaxially on the metal substrate (110) as a buffer layer (120). After growth of the buffer layer (120), a silicon layer was grown using hot wire chemical vapor deposition (HWCVD). The silicon film had the same grain size as the underlying metal substrate (110). In addition, the orientation of these grains matched the orientations of the underlying metal substrate (110).Type: ApplicationFiled: February 12, 2009Publication date: December 22, 2011Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Charles W. Teplin, Howard M Branz, Lee Heatherly, Mariappan Parans Paranthaman
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Publication number: 20110303265Abstract: A method (50) is provided for processing a graded-density AR silicon surface (14) to provide effective surface passivation. The method (50) includes positioning a substrate or wafer (12) with a silicon surface (14) in a reaction or processing chamber (42). The silicon surface (14) has been processed (52) to be an AR surface with a density gradient or region of black silicon. The method (50) continues with heating (54) the chamber (42) to a high temperature for both doping and surface passivation. The method (50) includes forming (58), with a dopant-containing precursor in contact with the silicon surface (14) of the substrate (12), an emitter junction (16) proximate to the silicon surface (14) by doping the substrate (12). The method (50) further includes, while the chamber is maintained at the high or raised temperature, forming (62) a passivation layer (19) on the graded-density silicon anti-reflection surface (14).Type: ApplicationFiled: June 9, 2010Publication date: December 15, 2011Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Hao-Chih Yuan, Howard M. Branz, Matthew R. Page
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Publication number: 20110284755Abstract: An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.Type: ApplicationFiled: January 30, 2009Publication date: November 24, 2011Applicant: Alliance For Sustainable Energy, LLCInventors: Pauls Stradins, Howard M. Branz, Qi Wang, Harold R. Mchugh
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Publication number: 20110146791Abstract: Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.Type: ApplicationFiled: August 21, 2008Publication date: June 23, 2011Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLCInventors: Charles Teplin, Howard M. Branz