Patents by Inventor Hsi-Cheng Hsu

Hsi-Cheng Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180370790
    Abstract: The present disclosure, in some embodiments, relates to a method of forming a micro-electromechanical system (MEMS) package. The method includes forming one or more depressions within a capping substrate. A back-side of a MEMS substrate is bonded to the capping substrate after forming the one or more depressions, so that the one or more depressions define one or more cavities between the capping substrate and the MEMS substrate. A front-side of the MEMS substrate is selectively etched to form one or more trenches extending through the MEMS substrate, and one or more polysilicon vias are formed within the one or more trenches. A conductive bonding structure is formed on the front-side of the MEMS substrate at a location contacting the one or more polysilicon vias. The MEMS substrate is bonded to a CMOS substrate having one or more semiconductor devices by way of the conductive bonding structure.
    Type: Application
    Filed: September 5, 2018
    Publication date: December 27, 2018
    Inventors: Shyh-Wei Cheng, Chih-Yu Wang, Hsi-Cheng Hsu, Ji-Hong Chiang, Jui-Chun Weng, Shiuan-Jeng Lin, Wei-Ding Wu, Ching-Hsiang Hu
  • Patent number: 10155656
    Abstract: The present disclosure relates to micro-electromechanical system (MEMS) package that uses polysilicon inter-tier connections to provide for a low parasitic capacitance in MEM device signals, and a method of formation. In some embodiments, the MEMS package has a CMOS substrate with one or more semiconductor devices arranged within a semiconductor body. A MEMS substrate having an ambulatory element is connected to the CMOS substrate by a conductive bonding structure. The conductive bonding structure is arranged on a front-side of the MEMS substrate at a location laterally offset from the ambulatory element. One or more polysilicon vias extend through the conductive MEMS substrate to the bonding structure. The one or more polysilicon vias are configured to electrically couple the MEMS substrate to the CMOS substrate. By connecting the MEMS substrate to the CMOS substrate using the polysilicon vias, the parasitic capacitance and form factor of the MEMS package are reduced.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shyh-Wei Cheng, Chih-Yu Wang, Hsi-Cheng Hsu, Ji-Hong Chiang, Jui-Chun Weng, Shiuan-Jeng Lin, Wei-Ding Wu, Ching-Hsiang Hu
  • Patent number: 10131536
    Abstract: The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: November 20, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shyh-Wei Cheng, Chih-Yu Wang, Hsi-Cheng Hsu, Hsin-Yu Chen, Ji-Hong Chiang, Jui-Chun Weng, Wei-Ding Wu
  • Patent number: 9884758
    Abstract: The present disclosure relates to a MEMS package having an outgassing element configured to adjust a pressure within a hermetically sealed cavity by inducing outgassing of into the cavity, and an associated method. In some embodiments, the method is performed by forming an outgassing element within a passivation layer over a CMOS substrate and forming an outgassing resistive layer to cover the outgassing element. The outgassing resistive layer is removed from over the outgassing element, and the MEMS substrate is bonded to a front side of the CMOS substrate to enclose a first MEMS device within a first cavity and a second MEMS device within a second cavity. After removing the outgassing resistive layer, the outgassing element releases a gas into the second cavity to increase a second pressure of the second cavity to be greater than a first pressure of the first cavity.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: February 6, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shyh-Wei Cheng, Hsi-Cheng Hsu, Hsin-Yu Chen, Ji-Hong Chiang, Jui-Chun Weng, Wei-Ding Wu, Yu-Jui Wu, Ching-Hsiang Hu, Ming-Tsung Chen
  • Patent number: 9880192
    Abstract: A Micro-Electro-Mechanical System (MEMS) device includes a sensing element, and a proof mass over and overlapping at least a portion of the sensing element. The proof mass is configured to be movable toward the sensing element. A protection region is formed between the sensing element and the proof mass. The protection region overlaps a first portion of the sensing element, and does not overlap a second portion of the sensing element, wherein the first and the second portions overlap the proof mass.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: January 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shyh-Wei Cheng, Yu-Ting Hsu, Hsi-Cheng Hsu, Chih-Yu Wang, Jui-Chun Weng, Che-Jung Chu
  • Publication number: 20170203962
    Abstract: The present disclosure relates to a MEMS package having an outgassing element configured to adjust a pressure within a hermetically sealed cavity by inducing outgassing of into the cavity, and an associated method. In some embodiments, the method is performed by forming an outgassing element within a passivation layer over a CMOS substrate and forming an outgassing resistive layer to cover the outgassing element. The outgassing resistive layer is removed from over the outgassing element, and the MEMS substrate is bonded to a front side of the CMOS substrate to enclose a first MEMS device within a first cavity and a second MEMS device within a second cavity. After removing the outgassing resistive layer, the outgassing element releases a gas into the second cavity to increase a second pressure of the second cavity to be greater than a first pressure of the first cavity.
    Type: Application
    Filed: June 15, 2016
    Publication date: July 20, 2017
    Inventors: Shyh-Wei Cheng, Hsi-Cheng Hsu, Hsin-Yu Chen, Ji-Hong Chiang, Jui-Chun Weng, Wei-Ding Wu, Yu-Jui Wu, Ching-Hsiang Hu, Ming-Tsung Chen
  • Publication number: 20170107097
    Abstract: The present disclosure relates to micro-electromechanical system (MEMS) package that uses polysilicon inter-tier connections to provide for a low parasitic capacitance in MEM device signals, and a method of formation. In some embodiments, the MEMS package has a CMOS substrate with one or more semiconductor devices arranged within a semiconductor body. A MEMS substrate having an ambulatory element is connected to the CMOS substrate by a conductive bonding structure. The conductive bonding structure is arranged on a front-side of the MEMS substrate at a location laterally offset from the ambulatory element. One or more polysilicon vias extend through the conductive MEMS substrate to the bonding structure. The one or more polysilicon vias are configured to electrically couple the MEMS substrate to the CMOS substrate. By connecting the MEMS substrate to the CMOS substrate using the polysilicon vias, the parasitic capacitance and form factor of the MEMS package are reduced.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 20, 2017
    Inventors: Shyh-Wei Cheng, Chih-Yu Wang, Hsi-Cheng Hsu, Ji-Hong Chiang, Jui-Chun Weng, Shiuan-Jeng Lin, Wei-Ding Wu, Ching-Hsiang Hu
  • Publication number: 20170107100
    Abstract: The present disclosure relates to a MEMs package having a heating element configured to adjust a pressure within a hermetically sealed chamber by inducing out-gassing of into the chamber, and an associated method. In some embodiments, the MEMs package has a CMOS substrate having one or more semiconductor devices arranged within a semiconductor body. A MEMs structure is connected to the CMOS substrate and has a micro-electromechanical (MEMs) device. The CMOS substrate and the MEMs structure form a hermetically sealed chamber abutting the MEMs device. A heating element is electrically coupled to the one or more semiconductor devices and is separated from the hermetically sealed chamber by an out-gassing layer arranged along an interior surface of the hermetically sealed chamber. By operating the heating element to cause the out-gassing layer to release a gas, the pressure of the hermetically sealed chamber can be adjusted after it is formed.
    Type: Application
    Filed: June 8, 2016
    Publication date: April 20, 2017
    Inventors: Shyh-Wei Cheng, Chih-Yu Wang, Hsi-Cheng Hsu, Hsin-Yu Chen, Ji-Hong Chiang, Jui-Chun Weng, Wei-Ding Wu
  • Patent number: 9561954
    Abstract: A method for forming an integrated circuit having Micro-electromechanical Systems (MEMS) includes forming at least two recesses into a first layer, forming at least two recesses into a second layer, the at least two recesses of the second layer being complementary to the recesses of the first layer. An intermediate layer is bonded onto the second layer, the intermediate layer includes through-holes corresponding to the recesses of the second layer. The first layer is bonded to the intermediate layer such that cavities are formed, the cavities to act as operating environments for MEMS devices. The two cavities have different pressures.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: February 7, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shyh-Wei Cheng, Jui-Chun Weng, Hsi-Cheng Hsu, Chih-Yu Wang, Jung-Kuo Tu, Che-Jung Chu, Yu-Ting Hsu
  • Patent number: 9527721
    Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package with an anti-stiction layer, and an associated method of formation. In some embodiments, the MEMS package comprises a device substrate and a CMOS substrate. The device substrate comprises a MEMS device having a moveable or flexible part that is movable or flexible with respect to the device substrate. A surface of the moveable or flexible part is coated by a conformal anti-stiction layer made of polycrystalline silicon. A method for manufacturing the MEMS package is also provided.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: December 27, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shyh-Wei Cheng, Chao-Po Lu, Chung-Hsien Hun, Chih-Shan Chen, Chuan-Yi Ko, Chih-Yu Wang, Hsi-Cheng Hsu, Ji-Hong Chiang, Jui-Chun Weng, Wei-Ding Wu
  • Publication number: 20160332863
    Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package with an anti-stiction layer, and an associated method of formation. In some embodiments, the MEMS package comprises a device substrate and a CMOS substrate. The device substrate comprises a MEMS device having a moveable or flexible part that is movable or flexible with respect to the device substrate. A surface of the moveable or flexible part is coated by a conformal anti-stiction layer made of polycrystalline silicon. A method for manufacturing the MEMS package is also provided.
    Type: Application
    Filed: May 15, 2015
    Publication date: November 17, 2016
    Inventors: Shyh-Wei Cheng, Chao-Po Lu, Chung-Hsien Hun, Chih-Shan Chen, Chuan-Yi Ko, Chih-Yu Wang, Hsi-Cheng Hsu, Ji-Hong Chiang, Jui-Chun Weng, Wei-Ding Wu
  • Patent number: 9090452
    Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS substrate disposed on the substrate. The MEMS substrate includes a movable element, a fixed element and at least a spring connected to the movable element and the fixed element. The MEMS device also includes a polysilicon layer on the movable element.
    Type: Grant
    Filed: December 6, 2013
    Date of Patent: July 28, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shyh-Wei Cheng, Jui-Chun Weng, Hsi-Cheng Hsu, Chih-Yu Wang, Chuan-Yi Ko, Ji-Hong Chiang, Chung-Hsien Hung, Hsin-Yu Chen, Chih-Hsien Chen, Yu-Mei Wu, Jong Chen
  • Publication number: 20150177273
    Abstract: A Micro-Electro-Mechanical System (MEMS) device includes a sensing element, and a proof mass over and overlapping at least a portion of the sensing element. The proof mass is configured to be movable toward the sensing element. A protection region is formed between the sensing element and the proof mass. The protection region overlaps a first portion of the sensing element, and does not overlap a second portion of the sensing element, wherein the first and the second portions overlap the proof mass.
    Type: Application
    Filed: January 29, 2015
    Publication date: June 25, 2015
    Inventors: Shyh-Wei Cheng, Yu-Ting Hsu, Hsi-Cheng Hsu, Chih-Yu Wang, Jui-Chun Weng, Che-Jung Chu
  • Publication number: 20150158716
    Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS substrate disposed on the substrate. The MEMS substrate includes a movable element, a fixed element and at least a spring connected to the movable element and the fixed element. The MEMS device also includes a polysilicon layer on the movable element.
    Type: Application
    Filed: December 6, 2013
    Publication date: June 11, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Shyh-Wei CHENG, Jui-Chun WENG, Hsi-Cheng HSU, Chih-Yu WANG, Chuan-Yi KO, Ji-Hong CHIANG, Chung-Hsien HUNG, Hsin-Yu CHEN, Chih-Hsien CHEN, Yu-Mei WU, Jong CHEN
  • Publication number: 20150104895
    Abstract: A method for forming an integrated circuit having Micro-electromechanical Systems (MEMS) includes forming at least two recesses into a first layer, forming at least two recesses into a second layer, the at least two recesses of the second layer being complementary to the recesses of the first layer. An intermediate layer is bonded onto the second layer, the intermediate layer includes through-holes corresponding to the recesses of the second layer. The first layer is bonded to the intermediate layer such that cavities are formed, the cavities to act as operating environments for MEMS devices. The two cavities have different pressures.
    Type: Application
    Filed: December 19, 2014
    Publication date: April 16, 2015
    Inventors: Shyh-Wei Cheng, Jui-Chun Jui-Chen, Hsi-Cheng Hsu, Chih-Yu Wang, Jung-Kuo Tu, Che-Jung Chu, Yu-Ting Hsu
  • Patent number: 8960003
    Abstract: A Micro-Electro-Mechanical System (MEMS) device includes a sensing element, and a proof mass over and overlapping at least a portion of the sensing element. The proof mass is configured to be movable toward the sensing element. A protection region is formed between the sensing element and the proof mass. The protection region overlaps a first portion of the sensing element, and does not overlap a second portion of the sensing element, wherein the first and the second portions overlap the proof mass.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: February 24, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shyh-Wei Cheng, Yu-Ting Hsu, Hsi-Cheng Hsu, Chih-Yu Wang, Jui-Chun Weng, Che-Jung Chu
  • Patent number: 8916943
    Abstract: An integrated circuit device includes a first layer comprising at least two partial cavities, an intermediate layer bonded to the first layer, the intermediate layer formed to support at least two Micro-electromechanical System (MEMS) devices, and a second layer bonded to the intermediate layer, the second layer comprising at least two partial cavities to complete the at least two partial cavities of the first layer through the intermediate layer to form at least two sealed full cavities. The at least two full cavities have different pressures within.
    Type: Grant
    Filed: March 1, 2013
    Date of Patent: December 23, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shyh-Wei Cheng, Jui-Chun Weng, Hsi-Cheng Hsu, Chih-Yu Wang, Jung-Kuo Tu, Che-Jung Chu, Yu-Ting Hsu
  • Publication number: 20140246708
    Abstract: An integrated circuit device includes a first layer comprising at least two partial cavities, an intermediate layer bonded to the first layer, the intermediate layer formed to support at least two Micro-electromechanical System (MEMS) devices, and a second layer bonded to the intermediate layer, the second layer comprising at least two partial cavities to complete the at least two partial cavities of the first layer through the intermediate layer to form at least two sealed full cavities. The at least two full cavities have different pressures within.
    Type: Application
    Filed: March 1, 2013
    Publication date: September 4, 2014
    Inventors: Shyh-Wei Cheng, Jui-Chun Weng, Hsi-Cheng Hsu, Chih-Yu Wang, Jung-Kuo Tu, Che-Jung Chu, Yu-Ting Hsu
  • Publication number: 20130068023
    Abstract: A Micro-Electro-Mechanical System (MEMS) device includes a sensing element, and a proof mass over and overlapping at least a portion of the sensing element. The proof mass is configured to be movable toward the sensing element. A protection region is formed between the sensing element and the proof mass. The protection region overlaps a first portion of the sensing element, and does not overlap a second portion of the sensing element, wherein the first and the second portions overlap the proof mass.
    Type: Application
    Filed: January 18, 2012
    Publication date: March 21, 2013
    Applicant: Taiwan Semiconductor Manufaturing Company, Ltd.
    Inventors: Shyh-Wei Cheng, Yu-Ting Hsu, Hsi-Cheng Hsu, Chih-Yu Wang, Jui-Chun Weng, Che-Jung Chu