Abstract: A method of manufacturing a semiconductor structure includes: forming a first opening in a first dielectric material; forming a first barrier layer in the first opening; forming a first seed material including copper and manganese on the first barrier layer, in which the manganese in the first seed material is in a range of from 0.10 at % to 0.40 at %; forming a first conductive material on the first seed material; and moving at least some of the manganese of the first seed material to a location proximate an interface between the first seed material and the first barrier layer. Another method of manufacturing a semiconductor structure and a semiconductor structure are also provided.

Abstract: A method of manufacturing a semiconductor structure includes: forming a first opening in a first dielectric material; forming a first barrier layer in the first opening; forming a first seed material including copper and manganese on the first barrier layer, in which the manganese in the first seed material is in a range of from 0.10 at % to 0.40 at %; forming a first conductive material on the first seed material; and moving at least some of the manganese of the first seed material to a location proximate an interface between the first seed material and the first barrier layer. Another method of manufacturing a semiconductor structure and a semiconductor structure are also provided.

Abstract: A method for bonding patterned imprint by transferring is disclosed, which comprises the following steps: (a) providing a first module having a molding substrate, a molding layer and a patterned molding features, and a second module having a substrate; wherein said molding layer and said patterned molding features are located on said molding substrate; (b) coating a release layer on said molding features; (c) filling a transfer layer into the recess which is located between the patterned molding features; (d) coating an adhesion layer on said substrate of said second module; (e) combining and contacting said second module and said first module together for transferring said transfer layer to said substrate of said second module; and (f) separating said second module from said first module.

Abstract: An electron anti-reflection arrangement includes a substrate, an electron resistant layer formed on a top side of the substrate, and an electron anti-reflective layer provided in between the substrate and the electron resistant layer for enabling an electron beam to pass to the inside of the substrate in an incident direction and minimizing the amount of electrons of the electron beam that return to the electron resistant layer after reflection by the substrate.

Abstract: An anti-electron reflector is constructed to include a substrate, an electron resistant layer formed on a top side of the substrate, and an anti-electron reflective layer provided in between the substrate and the electron resistant layer for enabling an electron beam to pass to the inside of the substrate in an incident direction and minimizing the amount of electrons of the electron beam that return to the electron resistant layer after reflection by the substrate.

Abstract: A near-field optical flying head includes a carrier maintained in a near-field distance from the surface of a disk to be recorded, a SIL (solid immersion lens) mounted on the front side of the carrier, a focusing lens mounted inside the carrier and adapted to focus laser beam onto the SIL, the SIL having a refraction face plated with a light scattering layer and a dielectric layer on the light scattering layer for releasing silver atoms to produce an optical aperture for the passing of laser beam upon the radiation of laser beam. In an alternate form of the invention, the refraction face of the SIL is plated with a mask layer and a dielectric layer that changes the refraction index to produce an optical aperture in the focused point for the passing of electromagnetic wave when heated by heat energy of laser beam.

Abstract: A tapping mode atomic force microscope includes a sinusoidal signal generator. The sinusoidal signal generator generates sinusoidal wave signals to a modulating laser diode for outputting a pulsed laser beam. The laser beam reflects from the back side of a photo detector and then a current signal with a corresponding intensity is output b y the photo detector. Then, the signal is converted by a current to voltage converter and then is operated by a differential amplifier. After the DC component and the undesired multiple frequency harmonics of the current signal is filtered by a band pass filter, the current signal is processed by a demodulation circuit and a low pass filter to produce a voltage value corresponding to probe deformation. After inputting this voltage value to a Z-axis servo controller, a corresponding control command is acquired based on a control algorithm so as to keep the value of the probe deformation constant.

Abstract: This invention is to provide a kind of near-field optical disk. This near-field optical disk is formed by a recording layer, a suitable thickness of near-field layer, a silver halide compound of light scattering layer, and a protection layer on the substrate layer in sequence. It is not necessary to increase the energy of transmitting beam for that the recording layer of this near-field optical disk and the transmitting beam has accomplished recording at a near-field distance to obtain the higher recording density.