Patents by Inventor Hsi-Tsung Lin
Hsi-Tsung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11967613Abstract: A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.Type: GrantFiled: May 16, 2023Date of Patent: April 23, 2024Assignee: WIN SEMICONDUCTORS CORP.Inventors: Ju-Hsien Lin, Jung-Tao Chung, Shu-Hsiao Tsai, Hsi-Tsung Lin, Chen-An Hsieh, Yi-Han Chen, Yao-Ting Shao
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Patent number: 11939456Abstract: A composition for preparing a foam, a foam, and a shoe employing the foam are provided. The composition for preparing a foam includes 3-30 parts by weight of a first polymer and at least one of a second polymer and a third polymer. The first polymer is cyclic olefin polymer (COP), cyclic olefin copolymer (COC), metallocene based cyclic olefin copolymer (mCOC), fully hydrogenated conjugated diene-vinyl aromatic copolymer, or a combination thereof. The total weight of the second polymer and the third polymer is 70-97 parts by weight. The second polymer is polyolefin, olefin copolymer, or a combination thereof. The third polymer is conjugated diene-vinyl aromatic copolymer, partially hydrogenated conjugated diene-vinyl aromatic copolymer, or a combination thereof. The total weight of the first polymer and at least one of the second polymer and the third polymer is 100 parts by weight.Type: GrantFiled: July 20, 2018Date of Patent: March 26, 2024Assignee: TSRC CORPORATIONInventors: Hsi-Hsin Shih, Hsuan-Tsung Lin, Ying-Pin Tu, Han-Ming Tsai
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Publication number: 20230317633Abstract: A semiconductor chip includes an active device and a passive device formed over a substrate. A passivation layer covers the active device and the passive device. A barrier structure surrounds the active device. A ceiling layer is formed across the barrier structure over the active device. The ceiling layer has an opening exposing the barrier structure.Type: ApplicationFiled: March 30, 2022Publication date: October 5, 2023Inventors: Chang-Hwang HUA, Chun-Han SONG, Rong-Hao SYU, Hsi-Tsung LIN, Shu-Hsiao TSAI
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Publication number: 20230282697Abstract: A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.Type: ApplicationFiled: May 16, 2023Publication date: September 7, 2023Inventors: Ju-Hsien LIN, Jung-Tao CHUNG, Shu-Hsiao TSAI, Hsi-Tsung LIN, Chen-An HSIEH, Yi-Han CHEN, Yao-Ting SHAO
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Patent number: 11695037Abstract: A semiconductor structure includes a substrate, a passive device and an active device over the substrate. The active device is formed in the first region of the substrate, and the passive device is formed in the second region of the substrate. The semiconductor structure further includes a passivation layer that covers the top surface of the passive device. The passivation layer has an opening that exposes the active device.Type: GrantFiled: January 12, 2021Date of Patent: July 4, 2023Assignee: WIN SEMICONDUCTORS CORP.Inventors: Ju-Hsien Lin, Jung-Tao Chung, Shu-Hsiao Tsai, Hsi-Tsung Lin, Chen-An Hsieh, Yi-Han Chen, Yao-Ting Shao
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Publication number: 20220223685Abstract: A semiconductor structure includes a substrate, a passive device and an active device over the substrate. The active device is formed in the first region of the substrate, and the passive device is formed in the second region of the substrate. The semiconductor structure further includes a passivation layer that covers the top surface of the passive device. The passivation layer has an opening that exposes the active device.Type: ApplicationFiled: January 12, 2021Publication date: July 14, 2022Inventors: Ju-Hsien LIN, Jung-Tao CHUNG, Shu-Hsiao TSAI, Hsi-Tsung LIN, Chen-An HSIEH, Yi-Han CHEN, Yao-Ting SHAO
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Patent number: 10643993Abstract: A compound semiconductor monolithically integrated circuit device with transistors and diodes comprises a compound semiconductor substrate, a transistor epitaxial structure, a transistor upper structure, a first diode, and a second diode. The transistor epitaxial structure forms on the compound semiconductor substrate. The first diode, the second diode, and the transistor upper structure form on a first part, a second part, and a third part of the transistor epitaxial structure, respectively. The transistor upper structure and the third part of the transistor epitaxial structure form a transistor. The first diode comprises a first part of an n-type doped epitaxial layer, a first part of a first intrinsic epitaxial layer, a first electrode, and a second electrode. The second diode comprises a second part of the n-type doped epitaxial layer, a second part of the first intrinsic epitaxial layer, a first electrode, and a second electrode.Type: GrantFiled: March 4, 2019Date of Patent: May 5, 2020Assignee: Win Semiconductors Corp.Inventors: Hsi-Tsung Lin, Yan-Cheng Lin, Sheng-Hsien Liu
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Publication number: 20200013774Abstract: A compound semiconductor monolithically integrated circuit device with transistors and diodes comprises a compound semiconductor substrate, a transistor epitaxial structure, a transistor upper structure, a first diode, and a second diode. The transistor epitaxial structure forms on the compound semiconductor substrate. The first diode, the second diode, and the transistor upper structure form on a first part, a second part, and a third part of the transistor epitaxial structure, respectively. The transistor upper structure and the third part of the transistor epitaxial structure form a transistor. The first diode comprises a first part of an n-type doped epitaxial layer, a first part of a first intrinsic epitaxial layer, a first electrode, and a second electrode. The second diode comprises a second part of the n-type doped epitaxial layer, a second part of the first intrinsic epitaxial layer, a first electrode, and a second electrode.Type: ApplicationFiled: March 4, 2019Publication date: January 9, 2020Inventors: Hsi-Tsung LIN, Yan-Cheng LIN, Sheng-Hsien LIU
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Patent number: 10361272Abstract: An InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer comprises a buffer layer, a channel layer, a carrier supply layer, a Schottky barrier layer and a cap layer sequentially formed on a compound semiconductor substrate; the cap layer has a gate recess, a bottom of the gate recess is defined by the Schottky barrier layer; a source electrode and a drain electrode are formed respectively on the cap layer at two sides with respect to the gate recess, the source electrode and the drain electrode form respectively an ohmic contact with the cap layer; a gate electrode is formed on the Schottky barrier layer within the gate recess, the gate electrode and the Schottky barrier layer form a Schottky contact; wherein the carrier supply layer is made of AlGaAs; the Schottky barrier layer is made of InGaAlP.Type: GrantFiled: October 30, 2017Date of Patent: July 23, 2019Assignee: Win Semiconductors Corp.Inventors: Shih-Ming Joseph Liu, Yu-Chi Wang, Cheng-Guan Yuan, Hsi-Tsung Lin, Chia Hsiung Lee
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Publication number: 20190074356Abstract: An InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer comprises a buffer layer, a channel layer, a carrier supply layer, a Schottky barrier layer and a cap layer sequentially formed on a compound semiconductor substrate; the cap layer has a gate recess, a bottom of the gate recess is defined by the Schottky barrier layer; a source electrode and a drain electrode are formed respectively on the cap layer at two sides with respect to the gate recess, the source electrode and the drain electrode form respectively an ohmic contact with the cap layer; a gate electrode is formed on the Schottky barrier layer within the gate recess, the gate electrode and the Schottky barrier layer form a Schottky contact; wherein the carrier supply layer is made of AlGaAs; the Schottky barrier layer is made of InGaAlP.Type: ApplicationFiled: October 30, 2017Publication date: March 7, 2019Inventors: Shih-Ming Joseph LIU, Yu-Chi WANG, Cheng-Guan YUAN, Hsi-Tsung LIN, Chia Hsiung LEE
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Patent number: 10186620Abstract: An InGaAlP Schottky field effect transistor with stepped bandgap ohmic contact, comprising: a buffer layer, a channel layer, a carrier supply layer, a Schottky barrier layer, an intermediate bandgap layer, a cap layer and an ohmic metal layer sequentially formed on a compound semiconductor substrate; wherein the Schottky barrier layer is made of InGaAlP; the ohmic metal layer and the cap layer form an ohmic contact. The Schottky barrier layer, the intermediate bandgap layer and the cap layer have a Schottky-barrier-layer bandgap, an intermediate bandgap and a cap-layer bandgap respectively, wherein the intermediate bandgap is less than the Schottky-barrier-layer bandgap and greater than the cap-layer bandgap.Type: GrantFiled: October 30, 2017Date of Patent: January 22, 2019Assignee: WIN SEMICONDUCTOR CORP.Inventors: Cheng-Guan Yuan, Shih-Ming Joseph Liu, Hsi-Tsung Lin, Chia Hsiung Lee