Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.

Abstract: An electrostatic discharge (ESD) protection device including the following components is provided. A first transistor includes a first gate, a first N-type source region, and an N-type drain region. A second transistor includes a second gate, a second N-type source region, and the N-type drain region. The N-type drain region is located between the first gate and the second gate. An N-type drift region is located in a P-type substrate between the first gate and the second gate and is located directly below a portion of the first gate and directly below a portion of the second gate. The N-type drain region is located in the N-type drift region. A P-type barrier region is located in the P-type substrate below the N-type drift region. The P-type barrier region has an overlapping portion overlapping the N-type drift region. There is at least one first opening in the overlapping portion.

Abstract: An image sensor including a substrate and an image sensing element is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit a contour of the arc surface. The image sensing element has a front surface and a rear surface opposite to the front surface and has at least one bonding wire, the bonding wire is connected between the front surface and the substrate, and the rear surface of the image sensing element directly contacts the arc surface. In addition, a manufacturing method of the image sensor is also provided.

Abstract: A through substrate via structure and a manufacturing method thereof, and a redistribution layer structure and a manufacturing method thereof are provided. The through substrate via structure includes a columnar conductive layer and a nanotwinned metal film disposed at least around the conductive layer. In a cross-section of the through substrate via structure, relative to a total area of the conductive layer and the nanotwinned metal film, an area ratio of the nanotwinned metal film is 50% or less by area.

Abstract: An image sensor including a substrate and an image sensing element is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit a contour of the arc surface. The image sensing element has a front surface and a rear surface opposite to the front surface and has at least one bonding wire, the bonding wire is connected between the front surface and the substrate, and the rear surface of the image sensing element directly contacts the arc surface. In addition, a manufacturing method of the image sensor is also provided.

Abstract: An image sensor including a substrate and an image sensing element is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit a contour of the arc surface. The image sensing element has a front surface and a rear surface opposite to each other and has at least one first conductive via. The rear surface of the image sensing element directly contacts the arc surface, and the first conductive via is extended from the front surface to the rear surface. In addition, a manufacturing method of the image sensor is also provided.

Abstract: An image sensor including a substrate and an image sensing element is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit a contour of the arc surface. The image sensing element has a front surface and a rear surface opposite to each other and has at least one first conductive via. The rear surface of the image sensing element directly contacts the arc surface, and the first conductive via is extended from the front surface to the rear surface. In addition, a manufacturing method of the image sensor is also provided.

Abstract: An optical micro-particle detector including a light source, a gas channel and a plurality of optical detectors is provided. The light source is configured to generate a light beam. The gas channel has at least one curved segment. The curved segment has a light entrance and a plurality of light exits. The light beam from the light source enters the gas channel through the light entrance. The plurality of optical detectors are optically coupled to the light exits, respectively.

Abstract: A miniaturized particulate matter detector that includes a filter and a concentration detector is provided. The filter has a plurality of holes, and the concentration detector is correspondingly disposed under the filter. The concentration detector has a detected area used to detect a concentration of at least one miniaturized particulate matter. A manufacturing method of the filter is also provided.

Abstract: An image sensor including a substrate, an image sensing element, and an adhesive layer is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit the contour of the arc surface. The adhesive layer is disposed on the arc surface and encapsulates the image sensing element.

Abstract: An optical micro-particle detector including a light source, a gas channel and a plurality of optical detectors is provided. The light source is configured to generate a light beam. The gas channel has at least one curved segment. The curved segment has a light entrance and a plurality of light exits. The light beam from the light source enters the gas channel through the light entrance. The plurality of optical detectors are optically coupled to the light exits, respectively.

Abstract: A manufacturing method of an image sensor. A substrate is provided, and the substrate has an arc surface. A cover, an adhesive layer, and an image sensing element are provided. The adhesive layer is bonded between the cover and the image sensing element. The cover, the adhesive layer, and the image sensing element bonded together are aligned to the substrate. The cover, the adhesive layer, and the image sensing element are pressed onto the substrate, such that the image sensing element is pressed by the adhesive layer and is thus curved to fit a contour of the arc surface, and the image sensing element is encapsulated by the adhesive layer.

Abstract: An image sensor including a substrate, an image sensing element, and an adhesive layer is provided. The substrate has an arc surface. The image sensing element is disposed on the arc surface and curved to fit the contour of the arc surface. The adhesive layer is disposed on the arc surface and encapsulates the image sensing element.

Abstract: A miniaturized particulate matter detector that includes a filter and a concentration detector is provided. The filter has a plurality of holes, and the concentration detector is correspondingly disposed under the filter. The concentration detector has a detected area used to detect a concentration of at least one miniaturized particulate matter. A manufacturing method of the filter is also provided.

Abstract: Conductive plug structures suitable for stacked semiconductor device package is provided, wherein large contact region between the conductive plug structures and the corresponding pads of devices can be achieved, to reduce electrical impedance. Therefore, package structures such as photosensitive device packages using the conductive plug structures have superior electrical performance and reliability.

Abstract: Conductive plug structures suitable for stacked semiconductor device package is provided, wherein large contact region between the conductive plug structures and the corresponding pads of devices can be achieved, to reduce electrical impedance. Therefore, package structures such as photosensitive device packages using the conductive plug structures have superior electrical performance and reliability.

Abstract: The three-dimensional conducting structure comprises a substrate, a first redistributed conductor, a second redistributed conductor and an insulator. The substrate has an active surface, a passive surface opposite to the active one, a pad on the active surface and a through hole. The first redistributed conductor comprises a projecting portion and a receiving portion. The projecting portion is projected from the active surface and electrically connected to the pad. The receiving portion is outside the active surface and in contact with the projecting portion, both of which constitute a recess communicating with the through hole. The second redistributed conductor is positioned within the through hole and the recess, in contact with the receiving portion, and extended toward the passive surface along the through hole. The insulator is filled between the second redistributed conductor and the substrate and between the second redistributed conductor and the projecting portion.

Abstract: A semiconductor structure and a process thereof are provided. The semiconductor structure includes a semiconductor wafer having a first surface and a second surface opposite to the first surface, through silicon vias and a crack stopping slot. The through silicon vias are embedded in the semiconductor wafer and connected between the first surface and the second surface. The crack stopping slot is located in the periphery of the second surface of the semiconductor wafer. The depth of the crack stopping slot is less than or equal to the thickness of the semiconductor wafer. The process firstly provides a semiconductor wafer having through silicon vias. Then, the aforementioned crack stopping slot is formed at a back side of the semiconductor wafer opposite to the first surface. Next, the semiconductor wafer is thinned from the back side to expose a second end of each through silicon via.

Abstract: This invention provides a substrate having at least one bottom electrode formed therein. A plurality of dice each having at least one opening formed therein are vertically stacked together one by one by a polymer insulating layer acting as an adhering layer between them, along with the openings thereof aligned to each other to form a through hole passing through said dice. The stacked dice are joined to a bottom of the substrate with the polymer insulating layer acting as an adhering layer, making the bottom electrode of the substrate contact the through hole. An electroplating process is performed with the bottom electrode serving as an electroplating electrode to form a conductive contact passing through the dice.

Abstract: This invention provides an image sensor module with a three-dimensional die-stacking structure. By filling a conductive material into through silicon vias within at least one image sensor die, and into via holes within an insulating layer, vertical electrical connections are formed between the image sensor die and an image processor buried in the insulating layer. A plurality of solder bumps is formed on a backside of the image sensor module so that the module can be directly assembled onto a circuit board. The image sensor module of this invention is characterized by a wafer-level packaging architecture and a three-dimensional die-stacking structure, which reduces electrical connection lengths within the module and thus reduces an area and height of the whole packaged module.