Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.

Abstract: A package includes a substrate having a conductive layer, and the conductive layer comprises an exposed portion. A die stack is disposed over the substrate and electrically connected to the conductive layer. A high thermal conductivity material is disposed over the substrate and contacting the exposed portion of the conductive layer. The package further includes a contour ring over and contacting the high thermal conductivity material.

Abstract: Semiconductor structures and methods are provided. An exemplary method includes depositing a first conductive material layer over a substrate, patterning the first conductive material layer to form a first conductor plate over the substrate, forming a first high-K dielectric layer over the first conductor plate, forming a second high-K dielectric layer on the first high-K dielectric layer, forming a third high-K dielectric layer on the second high-K dielectric layer, and forming a second conductor plate over the third high-K dielectric layer and vertically overlapped with the first conductor plate, where a composition of the first high-K dielectric layer is the same as a composition of the third high-K dielectric layer and is different from a composition of the second high-K dielectric layer.

Abstract: A semiconductor structure includes a first transistor, a second transistor, a metal rail, and a first source/drain contact and a second source/drain contact. The first transistor has a gate structure, a first source/drain feature, and a second source/drain feature. The first source/drain feature and the second source/drain feature are on opposite sides of the gate structure. The second transistor has the gate structure, a third source/drain feature directly over the first source/drain feature, and a fourth source/drain feature directly over the second source/drain feature. The metal rail extends in an X-direction and adjacent to the gate structure in a Y-direction. The first source/drain contact and the second source/drain contact each has an L-shape in a Y-Z cross-sectional view. The first source/drain contact electrically connects the first source/drain feature to the metal rail. The second source/drain contact electrically connects the fourth source/drain feature to the metal rail.

Abstract: A method for manufacturing a circuit board includes: forming a first adhesive layer on a first surface of a vibration unit, in which the vibration unit includes at least one piezoelectric material layer; forming a first stacking structure on the first adhesive layer; and applying a voltage to the at least one piezoelectric material layer to cause the at least one piezoelectric material layer to vibrate, such that the first stacking structure is separate from the vibration unit.

Abstract: A method for manufacturing a circuit board includes: forming a first adhesive layer on a first surface of a vibration unit, in which the vibration unit includes at least one piezoelectric material layer; forming a first stacking structure on the first adhesive layer; and applying a voltage to the at least one piezoelectric material layer to cause the at least one piezoelectric material layer to vibrate, such that the first stacking structure is separate from the vibration unit.

Abstract: A package structure includes a circuit substrate, first and second build-up circuit structures, and a plurality of piezoelectric heat dissipation units. The circuit substrate includes a core layer, a plurality of electronic devices, and a conducting unit. The electronic devices are embedded in the core layer, and active surfaces of the two adjacent electronic devices respectively face a first surface and a second surface of the core layer. The conducting unit is disposed on the core layer and electrically connected to the electronic devices. The first and second build-up circuit structures are respectively disposed on the first and the second surfaces and respectively have at least one first and at least one second openings. The piezoelectric heat dissipation units respectively correspond to the active surfaces of the electronic devices and are electrically connected to the conducting unit exposed by the first and the second openings.