Patents by Inventor Hsiang-Lang Lung

Hsiang-Lang Lung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sense circuit for resistive memory
    Patent number: 7426134
    Abstract: A memory includes a phase-change memory cell and a circuit. The phase-change memory cell can be set to at least three different states including a substantially crystalline state, a substantially amorphous state, and at least one partially crystalline and partially amorphous state. The circuit applies a first voltage across the memory cell to determine whether the memory cell is set at the substantially crystalline state and applies a second voltage across the memory cell to determine whether the memory cell is set at a partially crystalline and partially amorphous state.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: September 16, 2008
    Assignee: Infineon Technologies North America
    Inventors: Thomas Happ, Matthew J. Breitwisch, Hsiang-Lang Lung
  • Sense circuit for resistive memory
    Publication number: 20070201267
    Abstract: A memory includes a phase-change memory cell and a circuit. The phase-change memory cell can be set to at least three different states including a substantially crystalline state, a substantially amorphous state, and at least one partially crystalline and partially amorphous state. The circuit applies a first voltage across the memory cell to determine whether the memory cell is set at the substantially crystalline state and applies a second voltage across the memory cell to determine whether the memory cell is set at a partially crystalline and partially amorphous state.
    Type: Application
    Filed: February 24, 2006
    Publication date: August 30, 2007
    Inventors: Thomas Happ, Matthew Breitwisch, Hsiang-Lang Lung