Abstract: The present disclosure provides a method for fabricating an image sensor. The method includes the following operations. A cavity is formed at a first surface of a substrate. A germanium layer is formed in the cavity. A first heavily doped region is formed in the germanium layer by an implantation operation. A second heavily doped region is formed at a position proximal to a top surface of the germanium layer, wherein the second heavily doped region is laterally surrounded by the first heavily doped region from a top view perspective. An interconnect structure is formed over the germanium layer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

Abstract: The present invention relates to a polymerizable water-soluble or alcohol-soluble ultraviolet absorber, which is represented by the following formula (I): wherein R1 is H or C1˜5 alkyl; R2 is H, Cl, Br or I; R3 is H or methyl; and m each is an integer in the range from 3 to 12. The above-mentioned compounds are suitable for copolymerizing with one or more monomers to form copolymers so that the UV-light resistance of the copolymer can be efficiently promoted. For example, the polymer made by copolymerizing the above-mentioned compound with acrylate monomers can be applied to the production of optical medical materials, especially contact lenses or intraocular lenses.

Abstract: The present invention relates to a polymerizable water-soluble or alcohol-soluble ultraviolet absorber, which is represented by the following formula (I): wherein R1 is H or C1˜5 alkyl; R2 is H, Cl, Br or I; R3 is H or methyl; and m each is an integer in the range from 3 to 12. The above-mentioned compounds are suitable for copolymerizing with one or more monomers to form copolymers so that the UV-light resistance of the copolymer can be efficiently promoted. For example, the polymer made by copolymerizing the above-mentioned compound with acrylate monomers can be applied to the production of optical medical materials, especially contact lenses or intraocular lenses.