Abstract: A semiconductor device includes a substrate, an interfacial layer formed on the semiconductor substrate, and a high-k dielectric layer formed on the interfacial layer. At least one of the high-k dielectric layer and the interfacial layer is doped with: a first dopant species, a second dopant species, and a third dopant species. The first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity. The third dopant species forms a plurality of second dipole elements having a second polarity. A first concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the p-type transistor is different from a second concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the n-type transistor.

Abstract: A mortar design according to the present invention has been described. The mortar of the present invention weighs substantially less than the presently available mortars. Furthermore, the mortar of the present invention provides a dampening mechanism which substantially dampens the movement of the entire mortar assembly during firing of rounds.

Abstract: An improved process for making point-bonded nonwoven fabric composed of crimped filaments is described. The process involves melt spinning a side-by-side bicomponent filament which develops crimp at precisely the right instant so as to provide a uniform, high quality nonwoven fabric having a soft hand and other desirable apparel qualities.