Patents by Inventor Hsiang-Tai Lu
Hsiang-Tai Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240094282Abstract: A circuit test structure includes a chip including a conductive line which traces a perimeter of the chip. The circuit test structure further includes an interposer electrically connected to the chip, wherein the conductive line is over both the chip and the interposer. The circuit test structure further includes a test structure connected to the conductive line. The circuit test structure further includes a testing site, wherein the test structure is configured to electrically connect the testing site to the conductive line.Type: ApplicationFiled: November 22, 2023Publication date: March 21, 2024Inventors: Ching-Fang CHEN, Hsiang-Tai LU, Chih-Hsien LIN
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Publication number: 20240088124Abstract: A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.Type: ApplicationFiled: November 24, 2023Publication date: March 14, 2024Inventors: HSIANG-TAI LU, SHUO-MAO CHEN, MILL-JER WANG, FENG-CHENG HSU, CHAO-HSIANG YANG, SHIN-PUU JENG, CHENG-YI HONG, CHIH-HSIEN LIN, DAI-JANG CHEN, CHEN-HUA LIN
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Publication number: 20240047384Abstract: A semiconductor device includes a first circuit area disposed over a substrate and enclosed by a first seal ring structure, a second circuit area disposed over the substrate and enclosed by a second seal ring structure, an internal scribe line disposed between the first circuit area and the second circuit area, and connecting seal structures connecting the first seal ring structure and the second seal ring structures such that a part of the first seal ring structure, a part of the second seal ring structure and the connecting seal structures enclose the internal scribe line.Type: ApplicationFiled: February 13, 2023Publication date: February 8, 2024Inventors: Chi-Hui LAI, Yang-Che CHEN, Hsiang-Tai LU, Wei-Ray LIN
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Patent number: 11855066Abstract: A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.Type: GrantFiled: May 13, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hsiang-Tai Lu, Shuo-Mao Chen, Mill-Jer Wang, Feng-Cheng Hsu, Chao-Hsiang Yang, Shin-Puu Jeng, Cheng-Yi Hong, Chih-Hsien Lin, Dai-Jang Chen, Chen-Hua Lin
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Patent number: 11828790Abstract: A circuit test structure includes an interposer for electrically connecting to a chip, wherein the interposer includes a conductive line, and the conductive line extends along at least two side of the interposer. The circuit test structure further includes a plurality of electrical connections to the conductive line. The circuit test structure further includes a testing site electrically connected to the conductive line, wherein the testing site is on an opposite surface of the interposer from the plurality of electrical connections.Type: GrantFiled: April 13, 2021Date of Patent: November 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ching-Fang Chen, Hsiang-Tai Lu, Chih-Hsien Lin
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Publication number: 20230298970Abstract: A semiconductor structure includes a substrate, a capacitor disposed in the substrate, an interconnect structure disposed over the substrate, and a first doped region disposed in the substrate. The interconnect structure includes a first via structure coupled to the substrate, and a second via structure coupled to the capacitor. The first doped region is disposed under the first via structure. The first doped region includes p-type or n-type dopants.Type: ApplicationFiled: March 18, 2022Publication date: September 21, 2023Inventors: KUO WEN CHEN, HSIANG-TAI LU, CHIH-HSUAN TAI, MING-CHUNG WU
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Publication number: 20230238340Abstract: Semiconductor structures and methods of testing the same are provided. A semiconductor structure according to the present disclosure includes a substrate, a semiconductor device over the substrate, wherein the semiconductor device includes an interconnect structure, and the interconnect structure includes a plurality of metallization layers disposed in a dielectric layer; and a delamination sensor. The delamination sensor includes a connecting structure and a plurality of contact vias in at least one of the plurality of metallization layers. The connecting structure bonds the semiconductor device to the substrate and does not functionally couple the semiconductor device to the substrate. The plurality of contact vias fall within a first region of a vertical projection area of the connecting structure but do not overlap a second region of the vertical projection area.Type: ApplicationFiled: March 27, 2023Publication date: July 27, 2023Inventors: Chih-Hsuan Tai, Ming-Chung Wu, Kuo-Wen Chen, Hsiang-Tai Lu
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Patent number: 11616029Abstract: Semiconductor structures and methods of testing the same are provided. A semiconductor structure according to the present disclosure includes a substrate, a semiconductor device over the substrate, wherein the semiconductor device includes an interconnect structure, and the interconnect structure includes a plurality of metallization layers disposed in a dielectric layer; and a delamination sensor. The delamination sensor includes a connecting structure and a plurality of contact vias in at least one of the plurality of metallization layers. The connecting structure bonds the semiconductor device to the substrate and does not functionally couple the semiconductor device to the substrate. The plurality of contact vias fall within a first region of a vertical projection area of the connecting structure but do not overlap a second region of the vertical projection area.Type: GrantFiled: July 1, 2021Date of Patent: March 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Hsuan Tai, Ming-Chung Wu, Kuo-Wen Chen, Hsiang-Tai Lu
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Publication number: 20220375877Abstract: Semiconductor structures and methods of testing the same are provided. A semiconductor structure according to the present disclosure includes a substrate, a semiconductor device over the substrate, wherein the semiconductor device includes an interconnect structure, and the interconnect structure includes a plurality of metallization layers disposed in a dielectric layer; and a delamination sensor. The delamination sensor includes a connecting structure and a plurality of contact vias in at least one of the plurality of metallization layers. The connecting structure bonds the semiconductor device to the substrate and does not functionally couple the semiconductor device to the substrate. The plurality of contact vias fall within a first region of a vertical projection area of the connecting structure but do not overlap a second region of the vertical projection area.Type: ApplicationFiled: July 1, 2021Publication date: November 24, 2022Inventors: Chih-Hsuan Tai, Ming-Chung Wu, Kuo-Wen Chen, Hsiang-Tai Lu
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Publication number: 20220271024Abstract: A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.Type: ApplicationFiled: May 13, 2022Publication date: August 25, 2022Inventors: HSIANG-TAI LU, SHUO-MAO CHEN, MILL-JER WANG, FENG-CHENG HSU, CHAO-HSIANG YANG, SHIN-PUU JENG, CHENG-YI HONG, CHIH-HSIEN LIN, DAI-JANG CHEN, CHEN-HUA LIN
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Patent number: 11335672Abstract: A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.Type: GrantFiled: July 23, 2020Date of Patent: May 17, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hsiang-Tai Lu, Shuo-Mao Chen, Mill-Jer Wang, Feng-Cheng Hsu, Chao-Hsiang Yang, Shin-Puu Jeng, Cheng-Yi Hong, Chih-Hsien Lin, Dai-Jang Chen, Chen-Hua Lin
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Publication number: 20210231730Abstract: A circuit test structure includes an interposer for electrically connecting to a chip, wherein the interposer includes a conductive line, and the conductive line extends along at least two side of the interposer. The circuit test structure further includes a plurality of electrical connections to the conductive line. The circuit test structure further includes a testing site electrically connected to the conductive line, wherein the testing site is on an opposite surface of the interposer from the plurality of electrical connections.Type: ApplicationFiled: April 13, 2021Publication date: July 29, 2021Inventors: Ching-Fang CHEN, Hsiang-Tai LU, Chih-Hsien LIN
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Patent number: 11002788Abstract: A circuit test structure including an interposer for electrically connection to a chip, wherein the interposer includes a conductive line, and the conductive line traces a perimeter of the interposer. The circuit test structure further includes at least three electrical connections to the conductive line. The circuit test structure further includes a testing site. The circuit test structure further includes a through substrate via (TSV) connecting the testing site to the conductive line.Type: GrantFiled: May 2, 2019Date of Patent: May 11, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ching-Fang Chen, Hsiang-Tai Lu, Chih-Hsien Lin
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Patent number: 10879162Abstract: An integrated fan-out package includes a first semiconductor chip, a plurality of through integrated fan-out vias, an encapsulation layer and a redistribution layer structure. The first semiconductor chip includes a heat dissipation layer, and the heat dissipation layer covers at least 30 percent of a first surface of the first semiconductor chip. The through integrated fan-out vias are aside the first semiconductor chip. The encapsulation layer encapsulates the through integrated fan-out vias. The redistribution layer structure is at a first side of the first semiconductor chip and thermally connected to the heat dissipation layer of the first semiconductor chip.Type: GrantFiled: July 7, 2019Date of Patent: December 29, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shin-Puu Jeng, Dai-Jang Chen, Hsiang-Tai Lu, Hsien-Wen Liu, Chih-Hsien Lin, Shih-Ting Hung, Po-Yao Chuang
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Publication number: 20200357785Abstract: A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.Type: ApplicationFiled: July 23, 2020Publication date: November 12, 2020Inventors: HSIANG-TAI LU, SHUO-MAO CHEN, MILL-JER WANG, FENG-CHENG HSU, CHAO-HSIANG YANG, SHIN-PUU JENG, CHENG-YI HONG, CHIH-HSIEN LIN, DAI-JANG CHEN, CHEN-HUA LIN
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Patent number: 10741537Abstract: A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.Type: GrantFiled: October 5, 2017Date of Patent: August 11, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COOMPANY LTD.Inventors: Hsiang-Tai Lu, Shuo-Mao Chen, Mill-Jer Wang, Feng-Cheng Hsu, Chao-Hsiang Yang, Shin-Puu Jeng, Cheng-Yi Hong, Chih-Hsien Lin, Dai-Jang Chen, Chen-Hua Lin
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Publication number: 20200013707Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes a first semiconductor chip, a plurality of through integrated fan-out vias, an encapsulation layer and a redistribution layer structure. The first semiconductor chip includes a heat dissipation layer, and the heat dissipation layer covers at least 30 percent of a first surface of the first semiconductor chip. The through integrated fan-out vias are aside the first semiconductor chip. The encapsulation layer encapsulates the through integrated fan-out vias. The redistribution layer structure is at a first side of the first semiconductor chip and thermally connected to the heat dissipation layer of the first semiconductor chip.Type: ApplicationFiled: July 7, 2019Publication date: January 9, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shin-Puu Jeng, Dai-Jang Chen, Hsiang-Tai Lu, Hsien-Wen Liu, Chih-Hsien Lin, Shih-Ting Hung, Po-Yao Chuang
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Publication number: 20190257880Abstract: A circuit test structure including an interposer for electrically connection to a chip, wherein the interposer includes a conductive line, and the conductive line traces a perimeter of the interposer. The circuit test structure further includes at least three electrical connections to the conductive line. The circuit test structure further includes a testing site. The circuit test structure further includes a through substrate via (TSV) connecting the testing site to the conductive line.Type: ApplicationFiled: May 2, 2019Publication date: August 22, 2019Inventors: Ching-Fang CHEN, Hsiang-Tai LU, Chih-Hsien LIN
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Patent number: 10347574Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes a first semiconductor chip, a plurality of through integrated fan-out vias, an encapsulation layer and a redistribution layer structure. The first semiconductor chip includes a heat dissipation layer, and the heat dissipation layer covers at least 30 percent of a first surface of the first semiconductor chip. The through integrated fan-out vias are aside the first semiconductor chip. The encapsulation layer encapsulates the through integrated fan-out vias. The redistribution layer structure is at a first side of the first semiconductor chip and thermally connected to the heat dissipation layer of the first semiconductor chip.Type: GrantFiled: January 22, 2018Date of Patent: July 9, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shin-Puu Jeng, Dai-Jang Chen, Hsiang-Tai Lu, Hsien-Wen Liu, Chih-Hsien Lin, Shih-Ting Hung, Po-Yao Chuang
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Patent number: 10288676Abstract: A circuit test structure includes: a chip including a conductive line which traces a perimeter of the chip; an interposer electrically connected to the chip; and a Kelvin test structure including: at least three electrical connections to the conductive line; and a testing site. The Kelvin test structure is configured to electrically connect the testing site to the conductive line.Type: GrantFiled: June 26, 2017Date of Patent: May 14, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ching-Fang Chen, Hsiang-Tai Lu, Chih-Hsien Lin