Abstract: An insulating layer is formed over a surface of a semiconductor substrate. A conductive film is formed over the insulating layer and separated from the semiconductor substrate. A shielding pattern is embedded within the semiconductor substrate and includes a plurality of isolation portions and a plurality of highly doped portions. The isolation portions are distributed within the semiconductor substrate for dividing the surface of the semiconductor into a plurality of regions unconnected with each other. The highly doped portions are formed within the semiconductor substrate and close to the surface, electrically insulated from each other by the isolation portions. The shielding pattern may further include a plurality of silicide layers formed on the highly doped portions and an ion implanted well for accommodating the isolation portions and the highly doped portions.