Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.

Abstract: A transformer feed-back quadrature voltage controlled oscillator (QVCO) includes a first VCO; a second VCO; and a dynamic phase error correction circuit, having a plurality of coupling capacitors connected between the first and second VCOs, wherein the capacitances of the coupling capacitors are varied according to a digital control signal to correct a phase error of local oscillating (LO) signals of quadrature phases output by the first and second VCOs.

Abstract: A transformer feed-back quadrature voltage controlled oscillator (QVCO) includes a first VCO; a second VCO; and a dynamic phase error correction circuit, having a plurality of coupling capacitors connected between the first and second VCOs, wherein the capacitances of the coupling capacitors are varied according to a digital control signal to correct a phase error of local oscillating (LO) signals of quadrature phases output by the first and second VCOs.

Abstract: A transformer feed-back quadrature voltage controlled oscillator (QVCO) includes a first VCO; a second VCO; and a dynamic phase error correction circuit, having a plurality of coupling capacitors connected between the first and second VCOs, wherein the capacitances of the coupling capacitors are varied according to a digital control signal to correct a phase error of local oscillating (LO) signals of quadrature phases output by the first and second VCOs.

Abstract: A low-pass filter with a super source follower is disclosed. The low-pass filter includes biquad cells. Each biquad cell includes the super source follower, a first capacitor, a second capacitor and a zero controlling capacitor. The super source follower includes a first MOSFET and a second MOSFET. A gate electrode of first MOSFET is coupled to an input voltage. A source electrode of first MOSFET is coupled to a node between the first capacitor and the second capacitor. A drain electrode of first MOSFET is coupled to a gate electrode of second MOSFET. The zero controlling capacitor is coupled between the gate electrode and source electrode of first MOSFET, and the zero controlling capacitor has a capacitance far larger than a parasitic capacitance between the gate electrode and the source electrode of first MOSFET to generate a pair of controllable transmission zeros under low-frequency operation.

Abstract: A personal case history processing system writes health relevant data generated by a medical equipment into a data chip or supplies the health relevant data in the data chip to the medical equipment through a data reading/writing device or directly to the medical equipment by performing transmission of the health relevant data between the data chip and the corresponding data reading/writing device and/or the medical equipment, wherein the data chip may be connected to an IC card or a portable data processing device. Accordingly, personal transmission, reading/writing and access of the health relevant data may be realized.

Abstract: A frequency-converting circuit and a down converter with the frequency-converting circuit are disclosed. The above-mentioned frequency-converting circuit is used for converting an RF signal into a first baseband signal according to a poly-phase LO signal. The frequency-converting circuit includes a coupler, a first transduction unit and a first switching unit. The coupler is for receiving and splitting the RF signal and delivering a first RF signal via the first output terminal thereof. The first transduction unit is for amplifying the first RF signal. The first switching unit is for performing switching operations on the output signal of the first transduction unit and producing the first baseband signal.

Abstract: A sub-harmonic mixer and a down converter with the sub-harmonic mixer are provided. The sub-harmonic mixer includes a differential amplifying unit, a current buffer unit, and a switching unit. The differential amplifying unit is used to amplify a radio frequency (RF) signal and employs a first resonance circuit to force a leakage signal to flow to a first voltage. The current buffer unit is used to amplify the gain of an output signal of the differential amplifying unit and employs a second resonance circuit to force the leakage signal to flow to a second voltage. Finally, the switching unit switches an output signal of the current buffer unit into a base band signal.

Abstract: An inductor layout and manufacturing method thereof are provided. The inductor layout includes a substrate and a conductive path. The substrate includes at least an active region, wherein the active region includes at least a circuit. The conductive path is disposed over the substrate and arranged near the edge of the active region along the direction of the edge of the active region. Wherein, two ends of the conductive path are the two ends of the inductor.

Abstract: A sub-harmonic mixer and a down converter with the sub-harmonic mixer are provided. The sub-harmonic mixer includes a differential amplifying unit, a current buffer unit, and a switching unit. The differential amplifying unit is used to amplify a radio frequency (RF) signal and employs a first resonance circuit to force a leakage signal to flow to a first voltage. The current buffer unit is used to amplify the gain of an output signal of the differential amplifying unit and employs a second resonance circuit to force the leakage signal to flow to a second voltage. Finally, the switching unit switches an output signal of the current buffer unit into a base band signal.

Abstract: A frequency-converting circuit and a down converter with the frequency-converting circuit are disclosed. The above-mentioned frequency-converting circuit is used for converting an RF signal into a first baseband signal according to a poly-phase LO signal. The frequency-converting circuit includes a coupler, a first transduction unit and a first switching unit. The coupler is for receiving and splitting the RF signal and delivering a first RF signal via the first output terminal thereof. The first transduction unit is for amplifying the first RF signal. The first switching unit is for performing switching operations on the output signal of the first transduction unit and producing the first baseband signal.

Abstract: A first inductor or resistor has a first terminal connected to a first node and a second terminal connected to a supply node or AC ground node. The first node is a first point of connection between a first circuit and a second circuit. A first varactor has a first terminal connected to the first node and a second terminal connected to a control signal. An optional control signal generator generates the control signal according to the C-V curve of the first varactor in order to adjust the capacitance of the first varactor, optimize the energy transfer between the first circuit and the second circuit and also can match the output impedance of the first circuit to the input impedance of the second circuit.