Abstract: A copper bonding wire includes a line portion and a non-spherical block portion. The non-spherical block portion is physically connected to the line portion, and the cross-sectional area of the non-spherical block portion is bigger than that of the line portion.

Abstract: A semiconductor device package and a method of fabricating the same are disclosed. The semiconductor device package includes a substrate, a buffer structure, two active chips and a bridge chip. The substrate has a cavity, a first surface and a second surface opposite to the first surface. The cavity is extended from the first surface toward the second surface, and the buffer structure is disposed in the cavity. The active chips are mechanically disposed on and electrically connected to the first surface and around the cavity, wherein the active chips both have a first active surface. The bridge chip is disposed in the cavity and above the buffer structure, wherein the bridge chip has a second active surface, the second active surface faces the first active surfaces and is partially overlapped with the first active surfaces, the bridge chip is used for providing a proximity communication between the active chips.

Abstract: A semiconductor device package and a method of fabricating the same are disclosed. The semiconductor device package includes a substrate, a first chip, a jumper chip, a plurality of first bonding wires and a plurality of second bonding wires. The substrate has a plurality of contact pads. The first chip is disposed and electrically connected to the substrate via the first bonding wires. The jumper chip is disposed on the first chip and has a plurality of metal pads. Each of the metal pads is electrically connected to two contact pads of the substrate via two second bonding wires, respectively.

Abstract: A semiconductor device package and a method of fabricating the same are disclosed. The semiconductor device package includes a first substrate, a second substrate, two active chips, a bridge chip and a connection structure. The first substrate has a first surface facing a second surface of the second substrate. The active chips are disposed on and electrically connected to the first surface, and spaced apart from each other by an interval, wherein the active chips respectively have a first active surface. The bridge chip is mechanically and electrically connected to the second surface, and has a second active surface partially overlapped with the first active surfaces of the active chips, such that the bridge chip is used for providing a proximity communication between the active chips. The connection structure is disposed between the first surface and the second surface for combining the first substrate and the second substrate.

Abstract: A wire bonding structure of a semiconductor package includes a bonding wire, a pad and a non-conductive adhesive material. The bonding wire includes a line portion and a block portion, wherein the block portion is physically connected to the line portion, and the sectional area of the block portion is bigger than that of the line portion. The pad is bonded to the block portion. The non-conductive adhesive material covers the pad and seals the whole block portion of the bonding wire.

Abstract: A bonding strength measuring device for measuring the bonding strength between a substrate and a molding compound disposed on the substrate is provided. The measuring device includes a heating platform, a heating slide plate, and a fixing bracket. The heating platform has a first heating area and a first replaceable fixture. The substrate is disposed on the first heating area, and the first replaceable fixture is used to fix the substrate and has an opening exposing the molding compound. The heating slide plate has a second heating area and a second replaceable fixture. The second heating area is used to heat the molding compound, and the second replaceable fixture has a cavity for accommodating the molding compound. The fixing bracket is used to fix the heating slide plate above the heating platform.

Abstract: A test kit for testing a chip subassembly and a testing method by using the same is provided. The chip subassembly includes at least two stacked chips each having a number of electric contacts is provided. The test kit includes a test socket and a test plate. The test socket is configured to electrically engage the electric contacts on a first side of the chip subassembly. The test plate has at least a number of first probes configured for electrically engaging the electric contacts on a second side of the chip subassembly. At least one of the test socket and the test plate has a number of second probes for electrically connecting the test socket and the test plate.

Abstract: A semiconductor package is provided. The semiconductor package includes an organic substrate, a stiffness layer, and a chip subassembly. The stiffness layer is formed on the organic substrate. The chip subassembly is disposed on the stiffness layer. The chip subassembly includes at least a first chip, a second chip, and a third chip. The second chip is disposed between the first chip and the third chip in a stacked orientation. The first chip, the second chip, and the third chip have the function of proximity communication.

Abstract: A tenon-and-mortise packaging structure including a carrier and a chip is provided. The carrier has a top surface and a lower surface opposite to the top surface. The top surface forms at least one tenon projection, and the lower surface forms a mortise slot corresponding to the tenon projection in shape, size, and position, so that two carriers can be stacked on and jointed to each other by coupling the tenon projection to the corresponding mortise slot. The tenon projection and the mortise slot have conduction portions, respectively. When the tenon projection and the mortise slot are engaged with each other, the conduction portions are electrically connected with each other. At least one chip is embedded in the carrier. The chip has an active surface and a back side respectively and electrically connected with the top and the lower surfaces of the carrier.

Abstract: A copper bonding wire includes a line portion and a non-spherical block portion. The non-spherical block portion is physically connected to the line portion, and the cross-sectional area of the non-spherical block portion is bigger than that of the line portion.

Abstract: A wire bonding structure includes a chip and a bonding wire. The chip includes a base material, at least one first metallic pad, a re-distribution layer and at least one second metallic pad. The first metallic pad is disposed on the base material. The re-distribution layer has a first end and a second end, and the first end is electrically connected to the first metallic pad. The second metallic pad is electrically connected to the second end of the re-distribution layer. The bonding wire is bonded to the second metallic pad.

Abstract: A wire bonding structure of a semiconductor package includes a bonding wire, a pad and a non-conductive adhesive material. The bonding wire includes a line portion and a block portion, wherein the block portion is physically connected to the line portion, and the sectional area of the block portion is bigger than that of the line portion. The pad is bonded to the block portion. The non-conductive adhesive material covers the pad and seals the whole block portion of the bonding wire.

Abstract: A wafer defines a plurality of chips arranged in array manner. Each chip includes at least one aluminum pad and a middle material. The middle material covers the aluminum pad and is mounted on the aluminum pad.

Abstract: A semiconductor package and related methods are described. In one embodiment, the package includes a die pad, multiple leads, a chip, a package body, and a protective layer. The die pad includes an upper sloped portion, a lower sloped portion, and a peripheral edge region defining a cavity with a cavity bottom. Each lead includes an upper sloped portion and a lower sloped portion. The chip is disposed on the cavity bottom and is coupled to the leads. The package body is formed over the chip and the leads, substantially fills the cavity, and substantially covers the upper sloped portions of the die pad and the leads. The lower sloped portions of the die pad and the leads at least partially extend outwardly from a lower surface of the package body. The protective layer substantially covers the lower sloped portion and the lower surface of at least one lead.

Abstract: A bonding strength measuring device for measuring the bonding strength between a substrate and a molding compound disposed on the substrate is provided. The measuring device includes a heating platform, a heating slide plate, and a fixing bracket. The heating platform has a first heating area and a first replaceable fixture. The substrate is disposed on the first heating area, and the first replaceable fixture is used to fix the substrate and has an opening exposing the molding compound. The heating slide plate has a second heating area and a second replaceable fixture. The second heating area is used to heat the molding compound, and the second replaceable fixture has a cavity for accommodating the molding compound. The fixing bracket is used to fix the heating slide plate above the heating platform.

Abstract: A tenon-and-mortise packaging structure including a carrier and a chip is provided. The carrier has a top surface and a lower surface opposite to the top surface. The top surface forms at least one tenon projection, and the lower surface forms a mortise slot corresponding to the tenon projection in shape, size, and position, so that two carriers can be stacked on and jointed to each other by coupling the tenon projection to the corresponding mortise slot. The tenon projection and the mortise slot have conduction portions, respectively. When the tenon projection and the mortise slot are engaged with each other, the conduction portions are electrically connected with each other. At least one chip is embedded in the carrier. The chip has an active surface and a back side respectively and electrically connected with the top and the lower surfaces of the carrier.

Abstract: A package structure and a manufacturing method thereof are provided. The package structure includes a carrier, a chip-bonding structure and a chip. The chip-bonding structure is formed on a first surface of the carrier. The chip-bonding structure includes a cavity, a dam, several via holes and several solder bumps. The solder bumps are received in the via holes and are correspond to the first connecting pads located on the carrier. The chip is embedded in the cavity of the chip-bonding structure. An active surface of the chip is tightly pasted on the first surface of the chip-bonding structure, and the first solder pads form electrical contact with the corresponding solder bumps. The chip of the package structure is precisely disposed on the carrier, not only simplifying the manufacturing process but also forming stable electrical connection between the chip and the carrier of the package structure.

Abstract: Soluble wholly aromatic polyamide is obtained by low-temperature polycondensation in an amide solvent such as N-methyl-2-pyrrolidone. The reaction mixture is neutralized with an alkali and spun into fibers by wet spinning, coagulated in a salt-free aqueous solution of an organic solvent, preferably the polymerization solvent, and subsequently drawn in another aqueous solution of the same organic solvent, both solutions being substantially at ambient temperatures below 50.degree. C. but above freezing, More than 60% of the total fiber drawing is executed in this low-temperature draw stage.