Patents by Inventor Hsiao-Chun Huang
Hsiao-Chun Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240128216Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.Type: ApplicationFiled: January 4, 2023Publication date: April 18, 2024Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Ching-Chun Wang, Hsiao-Hui Tseng, Chen-Jong Wang, Dun-Nian Yaung
-
Publication number: 20240088224Abstract: A semiconductor structure includes a first gate structure, a second gate structure coupled to the first gate structure, a source region, a first drain region, and a second drain region. The source region is surrounded by the first gate structure and the second gate structure. The first drain region is separated from the source region by the first gate structure. The second drain region is separated from the source region by the second gat structure. A shape of the first drain region and a shape of the second drain region are different from each other from a plan view.Type: ApplicationFiled: November 14, 2023Publication date: March 14, 2024Inventors: HSING-I TSAI, FU-HUAN TSAI, CHIA-CHUNG CHEN, HSIAO-CHUN LEE, CHI-FENG HUANG, CHO-YING LU, VICTOR CHIANG LIANG
-
Publication number: 20230203680Abstract: An anode catalyst material has a chemical formula of FeaNibMcNdOe, wherein M is Mo, W, Sn, Si, Nb, V, Cr, Ta or a combination thereof. a+b+c+d+e=1, a>0, b>0, c>0, d?0, and e?0. The anode catalyst material can be used in a water electrolysis device for hydrogen evolution, which includes an anode and a cathode disposed in an alkaline aqueous solution, and the anode includes the described anode catalyst material.Type: ApplicationFiled: June 14, 2022Publication date: June 29, 2023Applicant: Industrial Technology Research InstituteInventors: Wen-Hsuan CHAO, Kuo-Hsin LIN, Hsiao-Chun HUANG, Shih-Chang CHEN, Han-Jung LI, Li-Duan TSAI
-
Patent number: 11549188Abstract: A membrane electrode assembly includes a first electrode, a second electrode, and an anion exchange membrane disposed between the first electrode and the second electrode. The first electrode includes a first metal mesh, a first catalyst layer wrapping the first metal mesh, a second metal mesh, and a second catalyst layer wrapping the second metal mesh. The first metal mesh is disposed between the anion exchange membrane and the second metal mesh. The second metal mesh is thicker than the first metal mesh, and the first catalyst layer is thicker than the second catalyst layer. The second catalyst layer is iron, cobalt, manganese, zinc, niobium, molybdenum, ruthenium, platinum, gold, or aluminum. The second catalyst layer is crystalline.Type: GrantFiled: April 28, 2021Date of Patent: January 10, 2023Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Hsiao-Chun Huang, Li-Duan Tsai, Hao-Ming Chen
-
Publication number: 20220349072Abstract: A membrane electrode assembly includes a first electrode, a second electrode, and an anion exchange membrane disposed between the first electrode and the second electrode. The first electrode includes a first metal mesh, a first catalyst layer wrapping the first metal mesh, a second metal mesh, and a second catalyst layer wrapping the second metal mesh. The first metal mesh is disposed between the anion exchange membrane and the second metal mesh. The second metal mesh is thicker than the first metal mesh, and the first catalyst layer is thicker than the second catalyst layer. The second catalyst layer is iron, cobalt, manganese, zinc, niobium, molybdenum, ruthenium, platinum, gold, or aluminum. The second catalyst layer is crystalline.Type: ApplicationFiled: April 28, 2021Publication date: November 3, 2022Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin LIN, Hsiao-Chun HUANG, Li-Duan TSAI, Hao-Ming CHEN
-
Patent number: 11142836Abstract: A method for manufacturing catalyst material is provided, which includes putting an M? target and an M? target into a nitrogen-containing atmosphere, in which M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M? is Nb, Ta, or a combination thereof. Powers are provided to the M? target and the M? target, respectively. Providing ions to bombard the M? target and the M? target to sputtering deposit M?aM?bN2 on a substrate, wherein 0.7?a?1.7, 0.3?b?1.3, and a+b=2, wherein M?aM?bN2 is a cubic crystal system.Type: GrantFiled: November 29, 2018Date of Patent: October 12, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Wen-Hsuan Chao, Yu-Ming Lin, Pin-Hsin Yang, Hsiao-Chun Huang, Chiu-Ping Huang, Jiunn-Nan Lin
-
Publication number: 20210275992Abstract: A method of manufacturing a composite catalyst is provided. The method includes the following steps. A catalyst composition including an inorganic support and a metallic nanoparticle attached to a surface of the inorganic support is provided. The catalyst composition, an organic material, and an acidic solvent are mixed to obtain a first mixed solution. An oxidant and the first mixed solution are mixed to obtain a second mixed solution. A drying process is performed on the second mixed solution to remove a solvent in the second mixed solution and to obtain a solid composite catalyst precursor. A calcination process is performed on the composite catalyst precursor to form a carbon-decorated composite catalyst.Type: ApplicationFiled: August 19, 2020Publication date: September 9, 2021Applicant: National Taiwan University of Science and TechnologyInventors: Bing-Joe Hwang, Wei-Nien Su, Chen-Yu Tsai, Hsiao-Chun Huang, Meng-Che Tsai, Chun-Jern Pan
-
Publication number: 20210246422Abstract: The present invention generally relates to a method for generating induced oligodendrocyte-lineage cells (induced OLGs) and treatment using such cells. The induced OLGs are useful in cell therapy, in particular for demyelinating diseases.Type: ApplicationFiled: June 14, 2019Publication date: August 12, 2021Applicant: ACADEMIA SINICAInventors: Joyce Jean LU, Hsiao-Chun HUANG, Pei-Lun LAI, Chi-Hou NG
-
Publication number: 20210095383Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyZ2 is cubic crystal system or amorphous.Type: ApplicationFiled: November 30, 2020Publication date: April 1, 2021Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin LIN, Li-Duan TSAI, Wen-Hsuan CHAO, Chiu-Ping HUANG, Pin-Hsin YANG, Hsiao-Chun HUANG, Jiunn-Nan LIN, Yu-Ming LIN
-
Patent number: 10914012Abstract: A membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and an anionic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer has a chemical structure of M?aM?bN2 or M?cM?dCe, wherein M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, M? is Nb, Ta, or a combination thereof, 0.7?a?1.7, 0.3?b?1.3, a+b=2, 0.24?c?1.7, 0.3?d?1.76, and 0.38?e?3.61, wherein M?aM?bN2 is a cubic crystal system and M?cM?d Ce is a cubic crystal system or amorphous.Type: GrantFiled: November 30, 2018Date of Patent: February 9, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Yu-Ming Lin, Wen-Hsuan Chao, Chiu-Ping Huang, Pin-Hsin Yang, Hsiao-Chun Huang, Jiunn-Nan Lin
-
Patent number: 10914011Abstract: A method for hydrogen evolution by electrolysis includes soaking a membrane electrode assembly into an alkaline aqueous solution. The membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and a cationic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer, the second catalyst layer, or both of the above has a chemical structure of MxRuyN2, wherein M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyN2 is cubic crystal system or amorphous. The method also applies a voltage to the anode and the cathode for electrolysis of the alkaline aqueous solution, thereby producing hydrogen at the cathode and producing oxygen at the anode.Type: GrantFiled: November 30, 2018Date of Patent: February 9, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Yu-Ming Lin, Wen-Hsuan Chao, Chiu-Ping Huang, Pin-Hsin Yang, Hsiao-Chun Huang, Jiunn-Nan Lin
-
Patent number: 10900133Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyZ2 is cubic crystal system or amorphous.Type: GrantFiled: November 30, 2018Date of Patent: January 26, 2021Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Wen-Hsuan Chao, Chiu-Ping Huang, Pin-Hsin Yang, Hsiao-Chun Huang, Jiunn-Nan Lin, Yu-Ming Lin
-
Publication number: 20200173040Abstract: A membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and an anionic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer has a chemical structure of M?aM?bN2 or M?cM?dCe, wherein M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, M? is Nb, Ta, or a combination thereof, 0.7?a?1.7, 0.3?b?1.3, a+b=2, 0.24?c?1.7, 0.3?d?1.76, and 0.38?e?3.61, wherein M?aM?bN2 is a cubic crystal system and M?cM?d Ce is a cubic crystal system or amorphous.Type: ApplicationFiled: November 30, 2018Publication date: June 4, 2020Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin LIN, Li-Duan TSAI, Yu-Ming LIN, Wen-Hsuan CHAO, Chiu-Ping HUANG, Pin-Hsin YANG, Hsiao-Chun HUANG, Jiunn-Nan LIN
-
Publication number: 20200173039Abstract: A method for hydrogen evolution by electrolysis includes soaking a membrane electrode assembly into an alkaline aqueous solution. The membrane electrode assembly includes an anode having a first catalyst layer on a first gas-liquid diffusion layer, a cathode having a second catalyst layer on a second gas-liquid diffusion layer, and a cationic exchange membrane between the first catalyst layer of the anode and the second catalyst layer of the cathode. The first catalyst layer, the second catalyst layer, or both of the above has a chemical structure of MxRuyN2, wherein M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyN2 is cubic crystal system or amorphous. The method also applies a voltage to the anode and the cathode for electrolysis of the alkaline aqueous solution, thereby producing hydrogen at the cathode and producing oxygen at the anode.Type: ApplicationFiled: November 30, 2018Publication date: June 4, 2020Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin Lin, Li-Duan Tsai, Yu-Ming Lin, Wen-Hsuan Chao, Chiu-Ping Huang, Pin-Hsin Yang, Hsiao-Chun Huang, Jiunn-Nan Lin
-
Publication number: 20200173043Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.Type: ApplicationFiled: November 30, 2018Publication date: June 4, 2020Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin LIN, Li-Duan TSAI, Wen-Hsuan CHAO, Chiu-Ping HUANG, Pin-Hsin YANG, Hsiao-Chun HUANG, Jiunn-Nan LIN, Yu-Ming LIN
-
Publication number: 20200173042Abstract: A method for manufacturing catalyst material is provided, which includes putting an M? target and an M? target into a nitrogen-containing atmosphere, in which M? is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M? is Nb, Ta, or a combination thereof. Powers are provided to the M? target and the M? target, respectively. Providing ions to bombard the M? target and the M? target to sputtering deposit M?aM?bN2 on a substrate, wherein 0.7?a?1.7, 0.3?b?1.3, and a+b=2, wherein M?aM?bN2 is a cubic crystal system.Type: ApplicationFiled: November 29, 2018Publication date: June 4, 2020Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Hsin LIN, Li-Duan TSAI, Wen-Hsuan CHAO, Yu-Ming LIN, Pin-Hsin YANG, Hsiao-Chun HUANG, Chiu-Ping HUANG, Jiunn-Nan LIN
-
Publication number: 20190109092Abstract: A method for fabricating a package structure is provided, which includes the steps of: providing a base portion having at least an electronic element embedded therein and at least a positioning unit formed around a periphery of the electronic element, wherein the positioning unit protrudes from or is flush with a surface of the base portion; and forming at least a circuit layer on the surface of the base portion and the electronic element. The circuit layer is aligned and connected to the electronic element through the positioning unit.Type: ApplicationFiled: December 11, 2018Publication date: April 11, 2019Inventors: Rui-Feng Tai, Hsiao-Chun Huang, Chun-Hung Lu, Hsi-Chang Hsu, Shih-Ching Chen
-
Publication number: 20180055887Abstract: The present invention generally relates to a method for preparing induced mesenchymal stem cells (iMSCs) and its applications. The iMSCs, like MSCs, can differentiate into multiple lineages, which may be beneficial for disease treatments. In addition, the present invention also provides a method for improving the MSC's functional characteristics such that the MSCs are more suitable for cell therapy or in vitro applications.Type: ApplicationFiled: August 23, 2017Publication date: March 1, 2018Applicant: ACADEMIA SINICAInventors: Jean LU, Hsiao-Chun HUANG, Pei-Lun LAI
-
Patent number: 9875949Abstract: An electronic package is provided, which includes: a circuit structure having opposite first and second sides; at least an electronic element disposed on the first side of the circuit structure; an encapsulant formed on the first side of the circuit structure for encapsulating the electronic element; a dielectric layer formed on portions of the second side of the circuit structure; and a metal structure formed on the dielectric layer and the circuit structure. The metal structure has a first metal layer bonded to the circuit structure and a second metal layer formed on the first metal layer and the dielectric layer. Therefore, by replacing a conventional silicon interposer with the circuit structure, the invention eliminates the need to fabricate through silicon vias so as to greatly reduce the fabrication difficulty and cost. The invention further provides a method for fabricating the electronic package.Type: GrantFiled: December 28, 2015Date of Patent: January 23, 2018Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Hsiao-Chun Huang, Hsien-Wen Chen, Shih-Ching Chen, Guang-Hwa Ma
-
Publication number: 20160329267Abstract: An electronic package is provided, which includes: a circuit structure having opposite first and second sides; at least an electronic element disposed on the first side of the circuit structure; an encapsulant formed on the first side of the circuit structure for encapsulating the electronic element; a dielectric layer formed on portions of the second side of the circuit structure; and a metal structure formed on the dielectric layer and the circuit structure. The metal structure has a first metal layer bonded to the circuit structure and a second metal layer formed on the first metal layer and the dielectric layer. Therefore, by replacing a conventional silicon interposer with the circuit structure, the invention eliminates the need to fabricate through silicon vias so as to greatly reduce the fabrication difficulty and cost. The invention further provides a method for fabricating the electronic package.Type: ApplicationFiled: December 28, 2015Publication date: November 10, 2016Inventors: Hsiao-Chun Huang, Hsien-Wen Chen, Shih-Ching Chen, Guang-Hwa Ma