Abstract: The present invention is to provide a chip diode for surface mounting comprising p+ and n+ type semiconductors on two surfaces of a semiconductor wafer respectively; a plurality of parallel, spaced first and second grooves formed on the p+ type semiconductor along X and Y axes and penetrated through the p+ type semiconductor into the n+ type semiconductor; a plurality of first insulation layers in the first and second grooves adapted to separate and insulate the p+ type semiconductor from the n+ type semiconductor at both sides; a plurality of first conductive metal layers coated on a central portion of the semiconductor wafer for soldering; and a plurality of second conductive metal layers coated on an edge of the semiconductor wafer and extended to sides of the n+ type semiconductor on the second surface of the semiconductor wafer to be in communication therewith.

Abstract: The invention relates to an integrated chip diode manufactured by forming two different typed semiconductors on the top and bottom of a wafer respectively and forming a plurality of diodes thereon, each diode comprises glass insulator encapsulated on sides thereof, two conductive metal layers formed on the surfaces of the semiconductors respectively, an insulation material coated on a portion of the surface of one conductive metal layer and a third conductive metal layer sintered on the glass insulator, such that the other conductive metal layer can be electrically connected to the insulation material on the one conductive metal layer via the third conductive metal layer. Thus, two independent soldered conductive terminals are formed at the same sides of the diodes and electrically connected to each of different typed semiconductors.

Abstract: The invention relates to an integrated chip diode manufactured by forming two different typed semiconductors on the top and bottom of a wafer respectively and forming a plurality of diodes thereon, each diode comprises glass insulator encapsulated on sides thereof, two conductive metal layers formed on the surfaces of the semiconductors respectively, an insulation material coated on a portion of the surface of one conductive metal layer and a third conductive metal layer sintered on the glass insulator, such that the other conductive metal layer can be electrically connected to the insulation material on the one conductive metal layer via the third conductive metal layer. Thus, two independent soldered conductive terminals are formed at the same sides of the diodes and electrically connected to each of different typed semiconductors.