Abstract: An integrated circuit (IC) device includes a first input/output (I/O) buffer circuit. The first input/output buffer circuit includes first and second groups of stacked transistors. The first group of stacked transistors transfer signals formatted in accordance with only one signal protocol from the group of signal protocols. The second group of stacked transistors transfers the signals formatted in accordance with more than one signal protocols. In addition, integrated circuit device also includes a second input/output buffer circuit. The second input/output buffer circuit includes third and fourth groups of stacked transistors. The third group of stacked transistors transfers the signals formatted in accordance to the first signal transmission protocol from the group of signal transmission protocols. The fourth group of stacked transistors transfers the signals formatted in accordance to the plurality of signal transmission protocols from the group of signal transmission protocols.

Abstract: A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

Abstract: A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

Abstract: A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

Abstract: A mask set and method for forming FinFET semiconductor devices provides a complementary set of fin-cut masks that are used in DPT (double patterning technology) to remove fins from non-active areas of a semiconductor device, after the fins are formed. Adjacent fins, or adjacent groups of fins, are removed using pattern features from different ones of the multiple fin-cut masks.

Abstract: A hard disk drawing device includes: a latch seat adapted to be connected to a hard disk; a handle member connected to the latch seat, movable between first and second positions along an axis, and defining a variable line perpendicular to the axis; and a latch member mounted movably on the latch seat and in sliding contact with the handle member in such a manner that movement of the handle member from the first position to the second position results in movement of the latch member from a locked position to an unlocked position along a reference line parallel to the variable line. The variable line is spaced apart from the reference line by a first distance when the handle member is disposed at the first position, and is spaced apart from the reference line by a second distance larger than the first distance when the handle member is disposed at the second position.

Abstract: A hard disk drawing device includes: a latch seat adapted to be connected to a hard disk; a handle member connected to the latch seat, movable between first and second positions along an axis, and defining a variable line perpendicular to the axis; and a latch member mounted movably on the latch seat and in sliding contact with the handle member in such a manner that movement of the handle member from the first position to the second position results in movement of the latch member from a locked position to an unlocked position along a reference line parallel to the variable line. The variable line is spaced apart from the reference line by a first distance when the handle member is disposed at the first position, and is spaced apart from the reference line by a second distance larger than the first distance when the handle member is disposed at the second position.