Abstract: A structure and associated methods of formation. The structure includes a layered configuration comprising a copper layer, a first layer, and a second layer. The copper layer consists essentially of copper. The first and second layers are disposed on opposite sides of the copper layer and are in direct mechanical contact with the copper layer. The first and second layers each consist essentially of a same alloy of nickel and cobalt having a weight percent concentration of cobalt in a range of 3% to 21%. A through hole in the layered configuration extends completely through the first layer, the copper layer, and the second layer, wherein a first opening in the layered configuration extends completely through the first layer and does not extend into any portion of the second layer.

Abstract: An apparatus for providing uniform axial load distribution for laminate layers of multilayer ceramic chip carriers includes a base plate configured to support a plurality of green sheet layers thereon, the base plate having at least one resiliently mounted load support bar disposed adjacent outer edges of the base plate. The load support bar is mounted on one or more biasing members such that the top surface of the support bar extends above the top surface of the base plate by a selected distance.

Abstract: A structure and associated methods of formation. The structure includes a layered configuration comprising a copper layer, a first layer, and a second layer. The copper layer consists essentially of copper. The first and second layers are disposed on opposite sides of the copper layer and are in direct mechanical contact with the copper layer. The first and second layers each consist essentially of a same alloy of nickel and cobalt having a weight percent concentration of cobalt in a range of 3% to 21%. A through hole in the layered configuration extends completely through the first layer, the copper layer, and the second layer, wherein a first opening in the layered configuration extends completely through the first layer and does not extend into any portion of the second layer.

Abstract: A copper core used in electroformed metal (EFM) masks is replaced with a copper/molybdenum/copper clad core (Cu/Mo/Cu). The copper cladding on the molybdenum enhances adhesion of electroplated nickel. The nickel is electro-deposited through a patterned resist template onto the copper clad molybdenum surface. The copper and molybdenum are etched by selective etchants that do not attack other non-etched layers, leaving a patterned nickel stencil on a high-strength supporting base.

Abstract: Disclosed is a method of manufacturing integrated circuit chips that partially joins an integrated circuit wafer to a supporting wafer at a limited number of joining points. Once joined, the integrated circuit wafer is chemically-mechanically polished to reduce the thickness of the integrated circuit wafer. Then, after reducing the thickness of the integrated circuit wafer, the invention performs conventional processing on the integrated circuit wafer to form devices and wiring in the integrated circuit wafer. Next, the invention cuts through the integrated circuit wafer and the supporting wafer to form chip sections. During this cutting process, the integrated circuit wafer separates from the supporting wafer in chip sections where the integrated circuit wafer is not joined to the supporting wafer by the joining points.

Abstract: A method and structure for forming an integrated circuit chip that forms thermal conductors in a second wafer, and bonds the second wafer to a first wafer. Then circuits are formed in the first wafer. The thermal conductors in the second wafer have a higher coefficient of thermal conductivity than the second wafer and the bonding process seals the thermal conductors within the second wafer. Chip carrier connections are formed on the side of the first wafer that is opposite to the side where the first wafer is bonded to the second wafer, and then the first wafer can be bonded to a chip carrier. The second wafer has a coefficient of thermal expansion that matches a coefficient of thermal expansion of the first wafer.

Abstract: Disclosed is a method of manufacturing integrated circuit chips that partially joins an integrated circuit wafer to a supporting wafer at a limited number of joining points. Once joined, the integrated circuit wafer is chemically-mechanically polished to reduce the thickness of the integrated circuit wafer. Then, after reducing the thickness of the integrated circuit wafer, the invention performs conventional processing on the integrated circuit wafer to form devices and wiring in the integrated circuit wafer. Next, the invention cuts through the integrated circuit wafer and the supporting wafer to form chip sections. During this cutting process, the integrated circuit wafer separates from the supporting wafer in chip sections where the integrated circuit wafer is not joined to the supporting wafer by the joining points.

Abstract: An improved Land Grid Array interconnect structure is provided with the use of small metal bumps on the substrate electrical contact pad. The bumps interlock with segments of the fuzz button connection and increase the physical contact surface area between the contact pad and fuss button. The improved contact reduces displacement of electrical contact points due to thermo-mechanical stress and lowers the required actuation force during assembly.

Abstract: An improved Land Grid Array interconnect structure is provided with the use of small metal bumps on the substrate electrical contact pad. The bumps interlock with segments of the fuzz button connection and increase the physical contact surface area between the contact pad and fuzz button. The improved contact reduces displacement of electrical contact points due to thermo-mechanical stress and lowers the required actuation force during assembly.

Abstract: A method and apparatus are provided for reworking of finishing metallurgy on pads of electronic components. The pads are copper or copper/nickel and have a layer of nickel thereon and an overlying layer of gold. The gold layer is removed first followed by the nickel layer and then the component is treated to remove etch and corrosion products. Media blasting is then used to restore the pads to their original condition as on prime parts. The pads are then replated using conventional nickel and gold plating solutions to form the reworked component.

Abstract: A screening mask having a stress-relieving area including an inner functional area having a pattern which is replicated on an underlying substrate, the inner functional area pattern having an one open area through which a paste is extruded and at least one tab, and an outer nonfunctional area distinct from the inner functional area, the outer nonfunctional area having a stress-relieving area adjacent to an edge of the screening mask that protects the at least one tab in the inner functional area from breaking.

Abstract: A method and apparatus are provided for reworking of finishing metallurgy on pads of electronic components. The pads are copper or copper/nickel and have a layer of nickel thereon and an overlying layer of gold. The gold layer is removed first followed by the nickel layer and then the component is treated to remove etch and corrosion products. Media blasting is then used to restore the pads to their original condition as on prime parts. The pads are then replated using conventional nickel and gold plating solutions to form the reworked component.

Abstract: A screening mask having a stress-relieving area including an inner functional area having a pattern which is replicated on an underlying substrate, the inner functional area pattern having an one open area through which a paste is extruded and at least one tab, and an outer nonfunctional area distinct from the inner functional area, the outer nonfunctional area having a stress-relieving area adjacent to an edge of the screening mask that protects the at least one tab in the inner functional area from breaking.

Abstract: A method for minimizing formation of cracks at junctions between conductive vias and conductive lines in line-to-via connections on a substrate. The method comprises providing a transition zone connected between a base section of the line and a cap, the transition zone providing a volume of conductive paste during a conductive paste screen printing operation that is greater than the volume provided by the base section being directly connected to the cap. In particular, the transition zone volume is an effective amount to prevent necking of the conductive line into the via when the mask is misaligned to the substrate within an expected alignment tolerance. The transition zone may comprise a jogged end extending from the base section to the cap at an angle to the line, or a flared end extending from the base section. Line-to-via connection structures, patterns on a mask for making such structures, and masks having such patterns are also disclosed.

Abstract: A method for minimizing formation of cracks at junctions between conductive vias and conductive lines in line-to-via connections on a substrate. The method comprises providing a transition zone connected between a base section of the line and a cap, the transition zone providing a volume of conductive paste during a conductive paste screen printing operation that is greater than the volume provided by the base section being directly connected to the cap. In particular, the transition zone volume is an effective amount to prevent necking of the conductive line into the via when the mask is misaligned to the substrate within an expected alignment tolerance. The transition zone may comprise a jogged end extending from the base section to the cap at an angle to the line, or a flared end extending from the base section. Line-to-via connection structures, patterns on a mask for making such structures, and masks having such patterns are also disclosed.

Abstract: A method for minimizing formation of cracks at junctions between conductive vias and conductive lines in line-to-via connections on a substrate. The method comprises providing a transition zone connected between a base section of the line and a cap, the transition zone providing a volume of conductive paste during a conductive paste screen printing operation that is greater than the volume provided by the base section being directly connected to the cap. In particular, the transition zone volume is an effective amount to prevent necking of the conductive line into the via when the mask is misaligned to the substrate within an expected alignment tolerance. The transition zone may comprise a jogged end extending from the base section to the cap at an angle to the line, or a flared end extending from the base section. Line-to-via connection structures, patterns on a mask for making such structures, and masks having such patterns are also disclosed.

Abstract: A method for preforming electrochemical processes requiring the application of electricity on features of a substrate includes shorting out the features using a shorting layer across connectors to which the features a in electrical communication. Electricity is then applied and the process is performed.

Abstract: A method of performing electrochemistry processes on features and connectors of a substrate includes the application of a shorting layer across the connectors which are in electrical contact with the features, thereby shorting the features and creating an assemblage for which electricity is applied.