Patents by Inventor Hsien-Wen Lin

Hsien-Wen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240159269
    Abstract: A rotary bearing assembly is disclosed and includes an input shaft, an inner-ring component, an outer-ring component and a load element. The input shaft is configured to combine a rotating shaft of a motor to provide a power input. The inner-ring component includes a gear set, wherein the inner-ring component is sleeved on the input shaft through the gear set and driven by the input shaft. The outer-ring component is sleeved on the inner-ring component through a load element and engaged with the gear set, wherein when the gear set is driven by the input shaft to drive the inner-ring component, the gear set drives the outer-ring component, and the inner-ring component and the outer-ring component are rotated relatively, wherein one of the inner-ring component and the outer-ring component is served to provide a power output, and a rotational speed difference is between the power input and the power output.
    Type: Application
    Filed: August 8, 2023
    Publication date: May 16, 2024
    Inventors: Chi-Wen Chung, Hung-Wei Lin, Hsien-Lung Tsai, Wei-Ying Chu, Chin-Hsiang Chen
  • Patent number: 8506938
    Abstract: A compound applying to skin and a method making the same comprises certain proportions for following first components: Dimethicone Crosspolymer, Dimethicone/Vinyl Dimethicone Crosspolymer, Cyclotetrasiloxane, Dimethicone, Cetyl PEG/PPG-15/15 Butyl Ether Dimethicone, Squalane, and Titanium Dioxide. Second components, third components, and fourth components with specific proportions as claimed are timely added in the first components. Sequentially mixing, heating, and dissolving the afore components would bring about the compound that keeps skin from sun exposure and provides functions of moisturizing, anti-wrinkle, spots clearing, blushers, anti-acnes, and whitening.
    Type: Grant
    Filed: August 26, 2011
    Date of Patent: August 13, 2013
    Inventor: Hsien-wen Lin
  • Publication number: 20130052147
    Abstract: A compound applying to skin and a method making the same comprises certain proportions for following first components: Dimethicone Crosspolymer, Dimethicone/Vinyl Dimethicone Crosspolymer, Cyclotetrasiloxane, Dimethicone, Cetyl PEG/PPG-15/15 Butyl Ether Dimethicone, Squalane, and Titanium Dioxide. Second components, third components, and fourth components with specific proportions as claimed are timely added in the first components. Sequentially mixing, heating, and dissolving the afore components would bring about the compound that keeps skin from sun exposure and provides functions of moisturizing, anti-wrinkle, spots clearing, blushers, anti-acnes, and whitening.
    Type: Application
    Filed: August 26, 2011
    Publication date: February 28, 2013
    Inventor: Hsien-wen LIN
  • Publication number: 20120315231
    Abstract: The present invention discloses a composition of a nail polish remover to overcome the drawbacks of conventional nail polish removers that contain acetone, have irritating smells, and cause corrosive damages. The composition of the present invention includes gamma-butyrolactone with a weight percentage of 10% to 95%, water with a weight percentage of 2.3899% to 52.9% and an additive with a weight percentage of 2.6101% to 37.1%. The main composition used for removing nail polish is ?-butyrolactone which has no irritating smell and less damage to nails.
    Type: Application
    Filed: June 9, 2011
    Publication date: December 13, 2012
    Inventor: Hsien-Wen LIN
  • Publication number: 20050199936
    Abstract: A single-poly two-transistor PMOS memory cell for multiple-time programming applications includes a PMOS floating gate transistor sharing a drain/source P+ diffusion region with a PMOS select gate transistor all formed within a first n-well. A control plate for the floating gate transistor is formed in a second n-well. A single-poly two-transitor PMOS memory cell for one-time programming applications includes a PMOS floating gate transistor having a source formed as a p+ diffusion region in a single n-well. The source is adapted to also serve as control plate for the floating gate transistor.
    Type: Application
    Filed: March 5, 2004
    Publication date: September 15, 2005
    Inventors: Alex Wang, Shang-De Chang, Han-Chih Lin, Tzeng-Huei Shiau, I-Sheng Liu, Hsien-Wen Lin