Abstract: An optical photographing system includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. The first lens element has an image-side surface being convex in a paraxial region thereof. The third lens element has positive refractive power. The fourth lens element has an object-side surface being concave in a paraxial region thereof. The fifth lens element with positive refractive power has two surfaces being both aspheric. The sixth lens element has an image-side surface being concave in a paraxial region thereof, wherein the surfaces of the sixth lens element are both aspheric, and the image-side surface of the sixth lens element includes at least one convex shape in an off-axial region thereof.

Abstract: An image capturing lens system includes, in order from an object side to an image side, a first lens element with positive refractive power having an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof, a second lens element with negative refractive power having an object-side surface being concave in a paraxial region thereof and an image-side surface being convex in a paraxial region thereof, a third lens element with positive refractive power having an object-side surface being concave in a paraxial region thereof and an image-side surface being convex in a paraxial region thereof, and a fourth lens element with negative refractive power having an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof.

Abstract: A lens system includes four lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element and a fourth lens element. Each of the four lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. At least one of the object-side surface and the image-side surface of the first lens element has at least one inflection point. The fourth lens element has positive refractive power, the object-side surface of the fourth lens element is convex in a paraxial region thereof, and at least one of the object-side surface and the image-side surface of the fourth lens element has at least one inflection point.

Abstract: An optical photographing lens assembly includes, in order from an object side to an image side, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element with positive refractive power has an object-side surface being convex in a paraxial region thereof and an image-side surface being concave in a paraxial region thereof. The second lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof. The third lens element has two surfaces being both aspheric. The fourth lens element with negative refractive power has an image-side surface being concave in a paraxial region thereof, wherein two surfaces thereof are aspheric. The fifth lens element has an image-side surface being convex in a paraxial region thereof, wherein two surfaces thereof are aspheric.

Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Abstract: The present invention provides improved processes for purifying liraglutide. Liraglutide is purified via two sequential RP-HPLC purifications followed by a salt-exchange step, where a pH is kept constant in the first and second purification steps. In particular, the processes utilize a halogenated solvent in a sample preparation step, which provides better solubility and an environment suitable for decarboxylation for crude liraglutide prior to a RP-HPLC purification.

Abstract: The present invention provides improved processes for purifying liraglutide. Liraglutide is purified via two sequential RP-HPLC purifications followed by a salt-exchange step, where a pH is kept constant in the first and second purification steps. In particular, the processes utilize a halogenated solvent in a sample preparation step, which provides better solubility and an environment suitable for decarboxylation for crude liraglutide prior to a RP-HPLC purification.

Abstract: A method for forming a complementary metal oxide semiconductor device is disclosed. First, a substrate having a first device region and a second device region is provided. A first trench is formed in the first device region and filled with a first material. A second trench is formed in the second device region and filled with a second material. The first material and the second material comprise different stresses. After that, a first gate structure and a second gate structure are formed on the first material and the second material and completely covering the first trench and the second trench, respectively.

Abstract: A method for forming a complementary metal oxide semiconductor device is disclosed. First, a substrate having a first device region and a second device region is provided. A first trench is formed in the first device region and filled with a first material. A second trench is formed in the second device region and filled with a second material. The first material and the second material comprise different stresses. After that, a first gate structure and a second gate structure are formed on the first material and the second material and completely covering the first trench and the second trench, respectively.

Abstract: A mask is designed for patterning organic light emitting material on a surface. The mask includes a substrate having a first surface and a second surface opposite to the first surface. The mask further includes a plurality of holes extended though the substrate with a pitch not greater than 150 um, and each hole having a first exit at the first surface and a second surface at the second surface. At least one of the plurality of holes has a smallest dimension being not greater than about 15 um.

Abstract: A complementary metal oxide semiconductor (CMOS) device is disclosed. The CMOS device includes a substrate with a first device region and a second device region formed thereon. A first isolation structure is formed in the first device region, and includes a first trench filled with a first material. A second isolation structure is formed in the second device region and includes a second trench filled with a second material. The first material and the second material have different stresses. A first gate structure is disposed atop the first material and completely covering the first trench. A second gate structure is disposed atop the second material and completely covering the second trench.