Patents by Inventor Hsin-Cheng Chen
Hsin-Cheng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11982936Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.Type: GrantFiled: June 30, 2022Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsin-Chang Lee, Ping-Hsun Lin, Yen-Cheng Ho, Chih-Cheng Lin, Chia-Jen Chen
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Publication number: 20240154016Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.Type: ApplicationFiled: January 17, 2024Publication date: May 9, 2024Inventors: Hsin-Yi Lee, Ji-Cheng Chen, Cheng-Lung Hung, Chi On Chui
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Patent number: 11978740Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.Type: GrantFiled: February 17, 2022Date of Patent: May 7, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Harry-Hak-Lay Chuang, Kuo-Ching Huang, Wei-Cheng Wu, Hsin Fu Lin, Henry Wang, Chien Hung Liu, Tsung-Hao Yeh, Hsien Jung Chen
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Publication number: 20240142459Abstract: A biological particle analysis method is provided and includes the following steps: fluorescence staining a liquid specimen through a fluorescence staining process so as to enable a target biological particle in the liquid specimen to becomes a fluorescence; accommodating the liquid specimen into a pico-droplet generator and using a camera device to take a real-time image of the liquid specimen; using the pico-droplet generator to output a target pico-droplet having the target biological particle onto a biochip according to the real-time image; removing the fluorescent color of the target biological particle in the target pico-droplet through a washing process; and fluorescence staining the target biological particle captured by the biochip at multiple times through the fluorescence staining process and the washing process, so as to obtain a plurality of fluorescence images respectively corresponding to multiple kinds of biological characterization expressions.Type: ApplicationFiled: April 10, 2023Publication date: May 2, 2024Inventors: Chung-Er Huang, Sheng-Wen Chen, Hsin-Cheng Ho, GUANG-CI YE
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Publication number: 20240139734Abstract: A biological particle enrichment apparatus and a pico-droplet generator thereof are provided. The pico-droplet generator includes a container, a hollow needle connected to the container, a first piezoelectric member disposed on the container, and a second piezoelectric member disposed on the hollow needle. The container can receive a liquid specimen having biological particles. The hollow needle and the container are fluid communicated with each other, and an inner diameter of the container is within a range from 5 times to 30 times of an inner diameter of the hollow needle. The first piezoelectric member is annularly disposed on a surrounding lateral side of the container, and enables the biological particles in the container to move along a direction away from the surrounding lateral side by vibrating the container. The second piezoelectric member can squeeze the hollow needle, so that the liquid specimen flows outwardly to form a pico-droplet.Type: ApplicationFiled: April 10, 2023Publication date: May 2, 2024Inventors: Chung-Er Huang, Sheng-Wen Chen, Hsin-Cheng Ho, GUANG-CI YE
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Publication number: 20240134268Abstract: A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.Type: ApplicationFiled: January 3, 2024Publication date: April 25, 2024Inventors: Chien-Cheng Chen, Huan-Ling Lee, Ta-Cheng Lien, Chia-Jen Chen, Hsin-Chang Lee
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Patent number: 11955428Abstract: A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.Type: GrantFiled: February 6, 2021Date of Patent: April 9, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hsin-Hung Chen, Min-Feng Kao, Hsing-Chih Lin, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 11955507Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.Type: GrantFiled: September 9, 2021Date of Patent: April 9, 2024Assignee: AU OPTRONICS CORPORATIONInventors: Hsin-Hung Li, Wei-Syun Wang, Chih-Chiang Chen, Yu-Cheng Shih, Cheng-Chan Wang, Chia-Hsin Chung, Ming-Jui Wang, Sheng-Ming Huang
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Patent number: 11942750Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.Type: GrantFiled: November 23, 2020Date of Patent: March 26, 2024Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yi-Chi Lee, Hsin-Chia Su, Shih-Ting Lin, Yu-Cheng Song, Fu-Shun Ho, Chih-Chun Chen
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Publication number: 20240094625Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.Type: ApplicationFiled: November 29, 2023Publication date: March 21, 2024Inventors: Hsin-Chang LEE, Ping-Hsun LIN, Chih-Cheng LIN, Chia-Jen CHEN
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Publication number: 20240088195Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Yu WEI, Yen-Liang LIN, Kuo-Cheng LEE, Hsun-Ying HUANG, Hsin-Chi CHEN
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Publication number: 20240077804Abstract: A method includes forming a test pattern and a reference pattern in an absorption layer of a photomask structure. The test pattern has a first trench and a second trench, the reference pattern has a third trench and a fourth trench, the test pattern and the reference pattern have substantially the same dimension in a top view, and the second trench is deeper than the first trench, the third trench, and the fourth trench. The method further includes emitting a light beam to the test pattern to obtain a first interference pattern reflected from the test pattern, emitting the light beam to the reference pattern to obtain a second interference pattern reflected from the reference pattern; and comparing the first interference pattern with the second interference pattern to obtain a measured complex refractive index of the absorption layer.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ping-Hsun LIN, Chien-Cheng CHEN, Shih Ju HUANG, Pei-Cheng HSU, Ta-Cheng LIEN, Hsin-Chang LEE
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Patent number: 11923414Abstract: A method of forming semiconductor devices having improved work function layers and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a gate dielectric layer on a channel region over a semiconductor substrate; depositing a first p-type work function metal on the gate dielectric layer; performing an oxygen treatment on the first p-type work function metal; and after performing the oxygen treatment, depositing a second p-type work function metal on the first p-type work function metal.Type: GrantFiled: June 15, 2022Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yi Lee, Ji-Cheng Chen, Chi On Chui
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Publication number: 20240069431Abstract: In a method of manufacturing an attenuated phase shift mask, a photo resist pattern is formed over a mask blank. The mask blank includes a transparent substrate, an etch stop layer on the transparent substrate, a phase shift material layer on the etch stop layer, a hard mask layer on the phase shift material layer and an intermediate layer on the hard mask layer. The intermediate layer is patterned by using the photo resist pattern as an etching mask, the hard mask layer is patterned by using the patterned intermediate layer as an etching mask, and the phase shift material layer is patterned by using the patterned hard mask layer as an etching mask. The intermediate layer includes at least one of a transition metal, a transition metal alloy, or a silicon containing material, and the hard mask layer is made of a different material than the intermediate layer.Type: ApplicationFiled: February 16, 2023Publication date: February 29, 2024Inventors: Wei-Che HSIEH, Chien-Cheng Chen, Ping-Hsun Lin, Ta-Cheng Lien, Hsin-Chang Lee
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Publication number: 20240074068Abstract: An electronic device includes a back board, a circuit board, a first attaching member and a second attaching member. The circuit board is arranged on the back board. The first attaching member is arranged between the back board and the circuit board. The second attaching member is arranged between the back board and the circuit board. The circuit board is fixed on the back board through the first attaching member and the second attaching member, and a material of the first attaching member is different from that of the second attaching member.Type: ApplicationFiled: July 25, 2023Publication date: February 29, 2024Inventors: Yuan-Cheng LIU, Meng-Syuan WU, Hsin-Cheng CHEN
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Publication number: 20240071888Abstract: A package structure including a redistribution circuit structure, a wiring substrate, first conductive terminals, an insulating encapsulation, and a semiconductor device is provided. The redistribution circuit structure includes stacked dielectric layers, redistribution wirings and first conductive pads. The first conductive pads are disposed on a surface of an outermost dielectric layer among the stacked dielectric layers, the first conductive pads are electrically connected to outermost redistribution pads among the redistribution wirings by via openings of the outermost dielectric layer, and a first lateral dimension of the via openings is greater than a half of a second lateral dimension of the outermost redistribution pads. The wiring substrate includes second conductive pads. The first conductive terminals are disposed between the first conductive pads and the second conductive pads. The insulating encapsulation is disposed on the surface of the redistribution circuit structure.Type: ApplicationFiled: August 28, 2022Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Chang Lin, Yen-Fu Su, Chin-Liang Chen, Wei-Yu Chen, Hsin-Yu Pan, Yu-Min Liang, Hao-Cheng Hou, Chi-Yang Yu
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Patent number: 11916124Abstract: A device includes a first nanostructure; a second nanostructure over the first nanostructure; a first high-k gate dielectric disposed around the first nanostructure; a second high-k gate dielectric being disposed around the second nanostructure; and a gate electrode over the first high-k gate dielectric and the second high-k gate dielectric. A portion of the gate electrode between the first nanostructure and the second nanostructure comprises a first portion of a p-type work function metal filling an area between the first high-k gate dielectric and the second high-k gate dielectric.Type: GrantFiled: April 11, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsin-Yi Lee, Ji-Cheng Chen, Cheng-Lung Hung, Chi On Chui
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Publication number: 20230240018Abstract: An electronic device, including a circuit board and a back plate, is provided. The circuit board has a first opening. The back plate includes a bottom portion, a protruding portion, and a column. The protruding portion protrudes from the bottom portion, and the column is located on the protruding portion. In a first direction, the column has a first outer diameter and a second outer diameter. A first width of the first opening is less than the first outer diameter and greater than the second outer diameter to limit the movement of the circuit board. The electronic device of the disclosure limits the movement of the circuit board through the column of the back plate, so as to reduce the number of screws used, thereby achieving the effects of reducing costs and/or reducing man-hours for locking the screws.Type: ApplicationFiled: December 22, 2022Publication date: July 27, 2023Applicant: Innolux CorporationInventors: Wen-Hung Lee, Hsin-Cheng Chen, Yuan-Cheng Liu, Meng-Syuan Wu
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Patent number: 11694732Abstract: Systems and methods for processing commands at a random access memory. A series of commands are received to read data from the random access memory or to write data to the random access memory. The random access memory can process commands at a first rate when the series of commands matches a pattern, and at a second, slower, rate when the series of commands does not match the pattern. A determination is made as to whether the series of commands matches the pattern based on at least a current command and a prior command in the series of commands. A ready signal is asserted when said determining determines that the series of commands matches the pattern, where the random access memory is configured to receive and process commands faster than the second rate when the pattern is matched and the ready signal is asserted over a period of multiple commands.Type: GrantFiled: May 2, 2022Date of Patent: July 4, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Hsin-Cheng Chen, Jung-Rung Jiang, Yen-Hao Huang
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Patent number: 11489988Abstract: A method for removing foreign substances from a camera system is provided. The camera system includes a camera device with a transparent cover having a piezoelectric component. First, a type of the foreign substances is identified based on temperature, an image captured by the camera system, and a voltage change of the piezoelectric component. A sequence of frequencies is applied to the piezoelectric component and a resonant frequency is acquired. Thereafter, the foreign substances are removed from the camera system. A vibration frequency and a vibration time period for the piezoelectric component are determined according to the identified type of the foreign substances. The vibration frequency is based on the resonant frequency. The piezoelectric component is driven with the vibration frequency and the vibration time period, such that at least a portion of the foreign substances are removed from the transparent cover through vibration of the piezoelectric component.Type: GrantFiled: May 5, 2020Date of Patent: November 1, 2022Assignee: H.P.B. OPTOELECTRONICS CO., LTD.Inventors: Hsuan-Yueh Hsu, Yung-Chih Chen, Kuo-Chung Tung, Hsin-Cheng Chen