Abstract: The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon, wherein the work function metal layer is on the gate dielectric layer. Then, a top barrier layer is formed on the work function metal layer. The step of forming the top barrier layer includes increasing a concentration of a boundary protection material in the top barrier layer. Lastly, a metal layer is formed on the top barrier layer. The present invention further provides a semiconductor device having a metal gate.

Abstract: A semiconductor structure includes a substrate, a dielectric layer and a fluoride metal layer. The dielectric layer is located on the substrate. The fluoride metal layer is located on the dielectric layer. Furthermore, the present invention also provides a semiconductor process to form said semiconductor structure.

Abstract: A method for fabricating an interconnection structure includes the following steps. Firstly, a substrate having a first conductive layer thereon is provided. Next, an ultra low-k material layer is formed on the substrate. Next, a portion of the ultra low-k material layer is removed, so as to form an opening to expose the first conductive layer. Next, a dry-cleaning process is performed by using gas, so as to clean a surface of the first conductive layer exposed by the opening. The dry-cleaning process is performed at a temperature in a range from the room temperature to 100° C.

Abstract: In a touch panel, a cover lens, a sensor unit, and a panel cell are assembled first via glue to form a panel component, where a concave portion is also formed at the side of the panel component. An assembling frame is used to extend into the concave portion and covering around the side and bottom of a backlight module so as to assemble the panel component with the backlight module. Wrapping tape and further fixtures that were used to combine the backlight module and the cell may be removed to reduce the overall cost of the touch panel, while the yield rate of the adhering process may be effectively promoted since the adhering process is done simply on glass components.

Abstract: A transistor having an aluminum metal gate includes a substrate, a high-k gate dielectric layer, an aluminum metal gate and a source/drain region. The high-k gate dielectric layer is disposed on the substrate. The aluminum metal gate includes a work function tuning layer and an aluminum metal layer disposed orderly on the high-k gate dielectric layer, where the aluminum metal layer comprises a first aluminum metal layer and a second aluminum metal layer. Furthermore, the source/drain region is disposed in the substrate at each of two sides of the aluminum metal gate.

Abstract: A metal gate includes a substrate, a gate dielectric layer, a work function metal layer, an aluminum nitride layer and a stop layer. The gate dielectric layer is located on the substrate. The work function metal layer is located on the gate dielectric layer. The aluminum nitride layer is located on the work function metal layer. The stop layer is located on the aluminum nitride layer.

Abstract: A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening.

Abstract: A method of fabricating a semiconductor device includes following steps. A substrate is provided, wherein a first dielectric layer having a trench therein is formed on the substrate, a source/drain region is formed in the substrate at two sides of the trench, and a second dielectric layer is formed on the substrate in the trench. A first physical vapor deposition process is performed to form a Ti-containing metal layer in the trench. A second physical vapor deposition process is performed to form an Al layer on the Ti-containing metal layer in the trench. A thermal process is performed to anneal the Ti-containing metal layer and the Al layer so as to form a work function metal layer. A metal layer is formed to fill the trench.

Abstract: A gate stack structure with an etch stop layer is provided. The gate stack structure is formed over a substrate. A spacer is formed on a sidewall of the gate stack structure. The gate stack structure includes a gate dielectric layer, a barrier layer, a repair layer and the etch stop layer. The gate dielectric layer is formed on the substrate. The barrier layer is formed on the gate dielectric layer. The barrier layer and an inner sidewall of the spacer collectively define a trench. The repair layer is formed on the barrier layer and an inner wall of the trench. The etch stop layer is formed on the repair layer.

Abstract: A metal gate structure includes a high-K gate dielectric layer, an N-containing layer, a work function metal layer, and an N-trapping layer. The N-containing layer is positioned between the work function metal layer and the high-K gate dielectric layer. The N-trapping layer is positioned between the work function metal layer and the high-K gate dielectric layer, and the N-trapping layer contains no nitrogen or low-concentration nitrogen.

Abstract: A manufacturing method of a metal gate structure includes first providing a substrate having a dummy gate formed thereon. The dummy gate includes a high-K gate dielectric layer, a bottom barrier layer, a first etch stop layer and a sacrificial layer sequentially and upwardly stacked on the substrate. Then, the sacrificial layer is removed to form a gate trench with the first etch stop layer exposed on the bottom of the gate trench. After forming the gate trench, a first work function metal layer is formed in the gate trench.

Abstract: The present invention provides a method of manufacturing semiconductor device having metal gates. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench. Then, a first metal layer is formed in the first trench. The second sacrifice gate is removed to form a second trench. Next, a second metal layer is formed in the first trench and the second trench. Lastly, a third metal layer is formed on the second metal layer wherein the third metal layer is filled into the first trench and the second trench.

Abstract: A method for manufacturing a metal gate structure includes providing a substrate having a high-K gate dielectric layer and a bottom barrier layer sequentially formed thereon, forming a work function metal layer on the substrate, and performing an anneal treatment to the work function metal layer in-situ.

Abstract: A method for fabricating an interconnection structure includes the following steps. Firstly, a substrate having a first conductive layer thereon is provided. Next, an ultra low-k material layer is formed on the substrate. Next, a portion of the ultra low-k material layer is removed, so as to form an opening to expose the first conductive layer. Next, a dry-cleaning process is performed by using gas, so as to clean a surface of the first conductive layer exposed by the opening. The dry-cleaning process is performed at a temperature in a range from the room temperature to 100° C.

Abstract: A direct type backlight unit having liftable frame structure includes a housing, an upper frame and a plurality of lamps, wherein the plurality of lamps disposed on a cavity defined by the housing and at least one has a foggy region. The upper frame is configured to accommodate a plurality of optical films and a liquid crystal panel and has two clip members for engaging with two connection hole of the housing such that the upper frame can be easily fixed on the housing. A plurality of lamp connection units are disposed within the cavity and each includes a conductive clamp member for clamping the conductive electrode of the lamp, thereby facilitating the replacement of the lamps.

Abstract: A cutter of juicer includes three arcuate blades arranged in equiangular positions and at different horizontal levels. Each blade has a convex side forming a plurality of serrate knife teeth for reaming foods rapidly when the blades rotate.

Abstract: An earpiece having a hollow cylindrical earpiece body and a diaphragm suspended at one end of the hollow cylindrical earpiece body for protecting the ear against outside water and for enabling the ear to hear a certain volume of sound.