Patents by Inventor Hsin H. Wang

Hsin H. Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective epitaxial silicon for intrinsic-extrinsic base link
    Patent number: 5420454
    Abstract: In a bipolar device, selective epitaxial silicon provides an improved intrinsic-extrinsic base link. A trench physically separates an intrinsic and extrinsic base portion. The trench includes sidewalls having a thin oxide layer formed thereon. The bottom of the trench is exposed during processing. A shallow link between the intrinsic-extrinsic regions of a bipolar transistor base is formed by depositing a heavily boron doped layer of silicon on the exposed portion of the trench. During subsequent processing, including rapid thermal anneal, there is some boron out-diffusion which forms a shallow diffused intrinsic-extrinsic base link.
    Type: Grant
    Filed: July 1, 1994
    Date of Patent: May 30, 1995
    Inventors: Dietrich W. Vook, Hsin H. Wang