Abstract: A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum. The cap layer includes at least one of: Ga2O3·Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnIn2Se4, CuGaS2, In2S3, MgO, or Zn0.8Mg0.2O.

Abstract: Embodiments of the present disclosure relate to photovoltaic devices, CIGS containing films, and methods of manufacturing CIGS containing films and photovoltaic devices to improve quantum efficiency, reduce interface charges, electron losses, and electron re-combinations. The CIGS layers in the photovoltaic devices described herein may be deposited using physical vapor deposition, followed by in-situ oxygen annealing, and further followed by deposition of a cap layer over the CIGS layer without subjecting the CIGS layer to an air break.

Abstract: Methods and apparatus form a photon absorber layer of a photodiode with characteristics conducive to applications such as, but not limited to, image sensors and the like. The absorber layer uses a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% to control the absorbed wavelengths while reducing dark current. Deposition temperatures of the absorber layer are controlled to less than approximately 400 degrees Celsius to produce sub-micron grain sizes. The absorber layer is doped with antimony at a temperature of less than approximately 400 degrees Celsius to increase the absorption.

Abstract: Embodiments of the present disclosure relate to photovoltaic devices, CIGS containing films, and methods of manufacturing CIGS containing films and photovoltaic devices to improve quantum efficiency, reduce interface charges, electron losses, and electron re-combinations. The CIGS layers in the photovoltaic devices described herein may be deposited using physical vapor deposition, followed by in-situ oxygen annealing, and further followed by deposition of a cap layer over the CIGS layer without subjecting the CIGS layer to an air break.

Abstract: A control method of a smart food preparation device includes: (a) providing a user terminal device displaying a device connection key; (b) clicking the device connection key to connect a smart food preparation device and open a food preparation control page, the smart food preparation device being configured to prepare a food, and the food preparation control page having a switch control key, a mode key and a parameter key; (c) clicking the mode key and the parameter key respectively to set a food preparation mode and food preparation parameters respectively; and (d) clicking the switch control key to start the smart food preparation device to prepare the food according to the food preparation mode and the food preparation parameters.

Abstract: Embodiments disclosed herein include photodiodes and methods of forming such photodiodes. In an embodiment, a method of creating a photodiode, comprises disposing an absorber layer over a first contact, wherein the absorber layer comprises a first conductivity type, and disposing a semiconductor layer over the absorber, wherein the semiconductor layer has a second conductivity type that is opposite from the first conductivity type. In an embodiment, the method further comprises disposing a hole blocking layer over the semiconductor layer, wherein the hole blocking layer is formed with a reactive sputtering process with a processing gas that comprises oxygen, and disposing a second contact over the hole blocking layer.

Abstract: The disclosure describes techniques for forming an ohmic contact layer in a wafer containing CMOS devices and attaching a VCSEL die therein. A composite layer that forms the ohmic contact layer is selected based on the epitaxially-grown compound semiconductor material of the VCSEL die. The ohmic contact layer may not comprise gold, as gold introduces contamination in the rest of the CMOS process. The wafer may have an allocated area for accepting the VCSEL die. The allocated area may have a recess to facilitate placement of the VCSEL die.

Abstract: Embodiments disclosed herein include CMOS image sensors and methods of forming such devices. In an embodiment, a method of forming a CMOS image sensor comprises pressurizing a chamber with a gas comprising hydrogen, and annealing a substrate in the pressurized chamber. In an embodiment the substrate comprises the CMOS image sensor. In an embodiment, the CMOS image sensor comprises a semiconductor body and a trench around a perimeter the semiconductor body, wherein the trench is filled with a high-k oxide that directly contacts the semiconductor body. In an embodiment, the method further comprises, depressurizing the chamber.

Abstract: Embodiments disclosed herein include photodiodes and methods of forming such photodiodes. In an embodiment, a method of creating a photodiode, comprises disposing an absorber layer over a first contact, wherein the absorber layer comprises a first conductivity type, and disposing a semiconductor layer over the absorber, wherein the semiconductor layer has a second conductivity type that is opposite from the first conductivity type. In an embodiment, the method further comprises disposing a hole blocking layer over the semiconductor layer, wherein the hole blocking layer is formed with a reactive sputtering process with a processing gas that comprises oxygen, and disposing a second contact over the hole blocking layer.

Abstract: This invention generally relates to a composition and method of using recombinant microRNAs (miRNA) and their hairpin-like precursors (pre-miRNA) as therapeutic drugs for treating Alzheimer's diseases (AD). More specifically, the present invention relates to the use of man-made miRNA miR-302 precursors (pre-miR-302) for AD therapy in humans. These pre-miR-302 molecules can be mass produced in prokaryotes as a form of DNA expression-competent DNA vectors and/or hairpin-like RNAs. As prokaryotic cells do not transcribe or process hairpin-like RNAs, the present invention also teaches a method for expressing pre-miRNAs in prokaryotes, i.e. pro-miRNA, using a novel hairpin-like RNA transcription mechanism newly found in prokaryotes.

Abstract: Methods and apparatus form a photon absorber layer of a photodiode with characteristics conducive to applications such as, but not limited to, image sensors and the like. The absorber layer uses a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% to control the absorbed wavelengths while reducing dark current. Deposition temperatures of the absorber layer are controlled to less than approximately 400 degrees Celsius to produce sub-micron grain sizes. The absorber layer is doped with antimony at a temperature of less than approximately 400 degrees Celsius to increase the absorption.

Abstract: Methods and apparatus form an image sensor pixel circuit on flexible and non-flexible substrates. At least one indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) is formed at a process temperature of approximately 400 degrees Celsius or less and at least one photodiode is formed on at least one of the at least one IGZO TFT. The at least one photodiode having an absorption layer formed, at least in part, by depositing a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% at a process temperature of less than or equal to approximately 400 degrees Celsius and doping the CIGS material with antimony at a process temperature of less than or equal to approximately 400 degrees Celsius.

Abstract: This invention generally relates to a composition and method of using recombinant microRNAs (miRNA) and their hairpin-like precursors (pre-miRNA) as therapeutic drugs for treating Alzheimer's diseases (AD). More specifically, the present invention relates to the use of man-made miRNA miR-302 precursors (pre-miR-302) for AD therapy in humans. These pre-miR-302 molecules can be mass produced in prokaryotes as a form of DNA expression-competent DNA vectors and/or hairpin-like RNAs. As prokaryotic cells do not transcribe or process hairpin-like RNAs, the present invention also teaches a method for expressing pre-miRNAs in prokaryotes, i.e. pro-miRNA, using a novel hairpin-like RNA transcription mechanism newly found in prokaryotes.

Abstract: This invention generally relates to a composition and method of using recombinant microRNAs (miRNA) and their hairpin-like precursors (pre-miRNA) as therapeutic drugs for treating Alzheimer's diseases (AD). More specifically, the present invention relates to the use of man-made miRNA miR-302 precursors (pre-miR-302) for AD therapy in humans. These pre-miR-302 molecules can be mass produced in prokaryotes as a form of DNA expression-competent DNA vectors and/or hairpin-like RNAs. As prokaryotic cells do not transcribe or process hairpin-like RNAs, the present invention also teaches a method for expressing pre-miRNAs in prokaryotes, i.e. pro-miRNA, using a novel hairpin-like RNA transcription mechanism newly found in prokaryotes.

Abstract: A matrix converter utilizes a bidirectional lateral insulated gate bipolar transistor (IGBT) including two gate electrodes. The IGBT can conduct in two directions. The matrix converter preferably is a three phase matrix converter including nine bidirectional IGBT switches. The IGBT switches are controlled by a control circuit which includes eighteen control lines, two for each IGBT. Additionally, the bidirectional IGBT can be used in a precharge circuit of a power inverter or in a dynamic brake associated with a motor controller.

Abstract: A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a RESURF operation to provide high voltage blocking in both directions. The IGBT is symmetrical, having N-type drift region in contact with an oxide layer. A P-type region is provided above the N-type-drift region, having a portion more heavily doped with P-type dopants. The RESURF operation can be provided by a buried oxide layer or by a P substrate or by a horizontal PN junction. The IGBT can be utilized in various power operations, including a matrix switch or a voltage source converter.