Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A method includes forming a first fin and a second fin protruding from a frontside of a substrate, forming a gate stack over the first and second fins, forming a dielectric feature dividing the gate stack into a first segment engaging the first fin and a second segment engaging the second fin, and growing a first epitaxial feature on the first fin and a second epitaxial feature on the second fin. The dielectric feature is disposed between the first and second epitaxial features. The method also includes performing an etching process on a backside of the substrate to form a backside trench, and forming a backside via in the backside trench. The backside trench exposes the dielectric feature and the first and second epitaxial features. The backside via straddles the dielectric feature and is in electrical connection with the first and second epitaxial features.

Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: A carrier structure is provided, in which at least one positioning area is defined on a chip-placement area of a package substrate, and at least one alignment portion is disposed on the positioning area. Therefore, the precision of manufacturing the alignment portion is improved by disposing the positioning area on the chip-placement area, such that the carrier structure can provide a better alignment mechanism for the chip placement operation.

Abstract: An artificial shuttlecock includes a ball head, a plurality of feathers, and a plurality of stems. Each of the feathers includes a notch. The notch is disposed on an outer edge of the feather. A ball head end of the stem is connected to the ball head, and a feather end is connected to the feather. The stem includes a body, which tapers from the end close to the ball end to the feather end. The end of the body close to the ball end has a first width, and the body has a second width at the feather. The first width is between 2.1 mm and 2.4 mm, and the second width is between 0.4 mm and 0.6 mm.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: providing a substrate and a dielectric layer on the substrate; forming a hole in the dielectric layer; forming an initial barrier material layer and a conductive layer on an upper surface of the dielectric layer and in the hole; removing part of the initial barrier material layer and part of the conductive layer to form a barrier material layer and a via element in the hole respectively and expose the upper surface of the dielectric layer. An upper surface of the barrier material layer is higher than the upper surface of the dielectric layer.

Abstract: An apparatus and a method for rendering three-dimensional stereoscopic images are provided. The apparatus comprises a multi-view processor, an object device, a depth device, and a block filling device. The multi-view processor obtains depth related data of a first pixel and a second pixel which are adjacent to each other on the input image, calculates a difference between the depth related data and determines whether the first pixel and the second pixel are continuous according to the difference. The object device executes a process of object detection to output contour information. The depth device executes a process of object judgment to output distance information. The block filling device detects a hole region in each viewpoint image, searches a search region adjacent to the hole region for a number of original pixels, and fills the hole region.

Abstract: A computer implemented data processing method for recursively approximating a proper value for a target matrix includes the following steps of: determining whether the target matrix corresponds to a low complexity condition; if so, obtaining a first updated target matrix according to a first variance, relevant to a second iteration parameter, and a first iteration parameter, wherein the first and the second iteration parameters correspond to fixed values; if not, obtaining a second updated target matrix according to a second variance, relevant to a fourth iteration parameter, and a third iteration parameter, wherein the third and the fourth parameters are related to the target matrix.

Abstract: An apparatus and a method for rendering three-dimensional stereoscopic images are provided. The apparatus comprises a multi-view processor, an object device, a depth device, and a block filling device. The multi-view processor obtains depth related data of a first pixel and a second pixel which are adjacent to each other on the input image, calculates a difference between the depth related data and determines whether the first pixel and the second pixel are continuous according to the difference. The object device executes a process of object detection to output contour information. The depth device executes a process of object judgment to output distance information. The block filling device detects a hole region in each viewpoint image, searches a search region adjacent to the hole region for a number of original pixels, and fills the hole region.

Abstract: Disclosed is a charging system and a charging method thereof. The charging system is applicable for charging an electronic device by at least a charging device and includes a detecting module configured to detect a voltage of a power storage unit of the electronic device; and a control module. When the electronic device is in a turned-off state, the control module is configured to conduct charging the power storage unit by a first current of one of said at least a charging device, upon judging that the voltage is substantially lower than a first value, and the control module is also configured to conduct charging the power storage unit by a second current of one of said at least a charging device, upon judging that the voltage is substantially higher than or equal to the first value.

Abstract: A method and a device for generating a multi-views three-dimensional (3D) stereoscopic image are based on displaying positions of target image elements of each view image of a multi-views 3D stereoscopic image in a 3D stereo display. Source image elements suitable to be displayed at each displaying position are obtained from a 2D-depth mixed image formed by combining a source 2D image and a corresponding depth map through an inverse view image searching manner, thereby generating a multi-views 3D stereoscopic image from the set target image elements for being displayed in the 3D stereo display.

Abstract: A computer implemented data processing method for recursively approximating a proper value for a target matrix includes the following steps of: determining whether the target matrix corresponds to a low complexity condition; if so, obtaining a first updated target matrix according to a first variance, relevant to a second iteration parameter, and a first iteration parameter, wherein the first and the second iteration parameters correspond to fixed values; if not, obtaining a second updated target matrix according to a second variance, relevant to a fourth iteration parameter, and a third iteration parameter, wherein the third and the fourth parameters are related to the target matrix.

Abstract: An apparatus and a method for rendering three-dimensional stereoscopic images are provided. The apparatus is for use in a three-dimensional image processing system which generates viewpoint images according to an input image and an input depth. The apparatus comprises an object device, a depth device, and a block filling device. The object device executes a process of object detection to output contour information according to the input image. The depth device executes a process of object judgment to output distance information according to the input depth. The block filling device detects a hole region in each viewpoint image, searches a search region adjacent to the hole region for a number of original pixels, and fills the hole region according to the original pixels, the contour information, and the distance information.

Abstract: A method and a device for generating a multi-views three-dimensional (3D) stereoscopic image are based on displaying positions of target image elements of each view image of a multi-views 3D stereoscopic image in a 3D stereo display. Source image elements suitable to be displayed at each displaying position are obtained from a 2D-depth mixed image formed by combining a source 2D image and a corresponding depth map through an inverse view image searching manner, thereby generating a multi-views 3D stereoscopic image from the set target image elements for being displayed in the 3D stereo display.

Abstract: An adaptive multi-channel controller and its method for a storage device are provided for data transmission between a host and the storage device. The storage device is configured to have multiple channels. A channel use amount is determined based on a data access amount of the host. Then, activated channels are selected among the channels according to the channel use amount. The data transmission is then carried out through the selected channels.