Abstract: A semiconductor device includes a stacked gate structure, a plurality of stacks and a first conductive layer. The stacks are disposed aside the stacked gate structure and arranged along both a first direction and a second direction perpendicular to the first direction, wherein the stacks are extended continuously along the first direction and segmented in the second direction. The first conductive layer is disposed between segmented portions of the stacks along the second direction, wherein top surfaces of the segmented portions of the stacks are higher than a top surface of the first conductive layer.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Abstract: A pixel structure is disposed on a substrate and electrically connected to a scan line and a data line. The pixel structure including an active device, a bottom capacitor electrode, an insulator, and a pixel electrode is provided. The active device is disposed on the substrate and has a gate, a source and a drain. Besides, the active device is electrically connected to the scan line and the data line. The bottom capacitor electrode and the gate are separately disposed on the substrate. The insulator covering the active device and the bottom capacitor electrode is made of a mono film. The pixel electrode is electrically connected to the active device, and at least a part of the pixel electrode extends to the insulator above the bottom capacitor electrode.

Abstract: A pixel structure is disposed on a substrate and electrically connected to a scan line and a data line. The pixel structure including an active device, a bottom capacitor electrode, an insulator, and a pixel electrode is provided. The active device is disposed on the substrate and has a gate, a source and a drain. Besides, the active device is electrically connected to the scan line and the data line. The bottom capacitor electrode and the gate are separately disposed on the substrate. The insulator covering the active device and the bottom capacitor electrode is made of a mono film. The pixel electrode is electrically connected to the active device, and at least a part of the pixel electrode extends to the insulator above the bottom capacitor electrode.

Abstract: A dual display unit comprising two OLED displays separately fabricated on two substrates. Each of the substrates has a peripheral area surrounding the respective display. A getter element is provided on one or both peripheral areas, substantially surrounding both the displays, for absorbing harmful gaseous elements in the display unit. A sealing material is applied along the edges of the two substrates enclosing the getter element so as to form a hermetic seal to the OLED displays. One or more further getter layers can be disposed between the first and second displays. The sealing material has a thickness sufficient to leave an air gap between the first display and the second display.

Abstract: The present invention provides a positive-tone photosensitivity resin composition comprising (A) an alkali-soluble acrylic resin, the alkali-soluble acrylic resin containing at least one structure unit selected from the group consisting of the following structure unit (1), structure unit (2), and structure unit (3), wherein R1, R2, R3, R4, R5, R, U, V, X, Y and Z are defined the same as the specification; (B) a naphthoquinone-diazide group containing compound; and (C) an solvent, the solvent is selected from the group consisting of ethers, ketones, esters, aromatic hydrocarbons and acetoacetates.

Abstract: A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: wherein R1 is H, C1-C4 alkyl, or CF3; Q is C4-C12 cycloalkyl; R2 is H, C1-C4 alkyl, or CF3; R3 is C4-C12 branched or cyclic alkyl; and x+y+z equals to 1. The chemically-amplified resist compositions of the present invention not only can be applied maturely to general lithographic processes, especially to 193 nm lithographic process, but also have excellent photo-sensitivity, and can form a well-resolved pattern and profile.

Abstract: A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: 1