Patents by Inventor Hsin-Ping Chen
Hsin-Ping Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984359Abstract: A semiconductor device includes a first conductive structure. The semiconductor device includes a first dielectric structure. The semiconductor device includes a second conductive structure. The first dielectric structure is positioned between a first surface of the first conductive structure and a surface of the second conductive structure. The semiconductor device includes an etch stop layer overlaying the first conductive structure. The semiconductor device includes a first spacer structure overlaying the first dielectric structure. The semiconductor device includes a second dielectric structure overlaying the first spacer structure and the etch stop layer.Type: GrantFiled: February 28, 2022Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Pokuan Ho, Hsin-Ping Chen, Chia-Tien Wu
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Patent number: 11936238Abstract: An uninterruptible power apparatus is coupled between a power grid and a load. The uninterruptible power apparatus includes a bypass path, a power conversion module, and a control module. The bypass path is coupled to the power grid through a grid terminal, and coupled to the load through a load terminal. The control module turns off a first thyristor and a second thyristor by injecting a second voltage into the load terminal during a forced commutation period. The control module calculates a magnetic flux offset amount based on an error amount between the second voltage and a voltage command, and provides a compensation command in response to the magnetic flux offset amount. The control module controls the DC/AC conversion circuit to provide a third voltage to the load terminal based on the compensation command and the voltage command.Type: GrantFiled: June 15, 2022Date of Patent: March 19, 2024Assignee: DELTA ELECTRONICS, INC.Inventors: Hsin-Chih Chen, Hung-Chieh Lin, Chao-Lung Kuo, Yi-Ping Hsieh, Chien-Shien Lee
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Patent number: 11923306Abstract: A method for manufacturing a semiconductor structure includes forming a plurality of dummy structures spaced apart from each other, forming a plurality of dielectric spacers laterally covering the dummy structures to form a plurality of trenches defined by the dielectric spacers, filling a conductive material into the trenches to form electrically conductive features, selectively depositing a capping material on the electrically conductive features to form a capping layer, removing the dummy structures to form a plurality of recesses defined by the dielectric spacers, filling a sacrificial material into the recesses so as to form sacrificial features, depositing a sustaining layer on the sacrificial features, and removing the sacrificial features to form air gaps confined by the sustaining layer and the dielectric spacers.Type: GrantFiled: August 30, 2021Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Wei Su, Chia-Tien Wu, Hsin-Ping Chen, Shau-Lin Shue
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Patent number: 11915755Abstract: A layout of a semiconductor memory device includes a substrate and a ternary content addressable memory (TCAM). The TCAM is disposed on the substrate and includes a plurality of TCAM bit cells, where at least two of the TCAM bit cells are mirror-symmetrical along an axis of symmetry, and each of the TCAM bit cells includes two storage units electrically connected to two word lines respectively, and a logic circuit electrically connected to the storage units. The logic circuit includes two first reading transistors, and two second reading transistors, where each of the second reading transistors includes a gate and source and drain regions, the source and drain regions of the second reading transistors are electrically connected to two matching lines and the first reading transistors, respectively, where the word lines are disposed parallel to and between the matching lines.Type: GrantFiled: January 20, 2022Date of Patent: February 27, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Yen Tseng, Yu-Tse Kuo, Shu-Ru Wang, Chun-Hsien Huang, Hsin-Chih Yu, Meng-Ping Chuang, Li-Ping Huang, Yu-Fang Chen
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Patent number: 11848190Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.Type: GrantFiled: November 10, 2022Date of Patent: December 19, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsin-Ping Chen, Yung-Hsu Wu, Chia-Tien Wu, Min Cao, Ming-Han Lee, Shau-Lin Shue, Shin-Yi Yang
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Publication number: 20230387022Abstract: A semiconductor device includes a substrate, an interconnect layer disposed over the substrate and including a metal line, and a dielectric layer disposed on the interconnect layer and including a via contact. The via contact is electrically connected to the metal line and has a first dimension in a first direction greater than a second dimension in a second direction. The first direction and the second direction are perpendicular to each other, and are both perpendicular to a longitudinal direction of the via contact.Type: ApplicationFiled: May 26, 2022Publication date: November 30, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsi-Wen TIEN, Hwei-Jay CHU, Chia-Tien WU, Yung-Hsu WU, Wei-Hao LIAO, Yu-Teng DAI, Hsin-Chieh YAO, Hsin-Ping CHEN, Chih-Wei LU
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Publication number: 20230369096Abstract: A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.Type: ApplicationFiled: July 24, 2023Publication date: November 16, 2023Inventors: Tai-I YANG, Wei-Chen CHU, Yung-Chih WANG, Chia-Tien WU, Hsin-Ping CHEN, Shau-Lin SHUE
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Patent number: 11764106Abstract: A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.Type: GrantFiled: April 26, 2021Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tai-I Yang, Wei-Chen Chu, Yung-Chih Wang, Chia-Tien Wu, Hsin-Ping Chen, Shau-Lin Shue
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Publication number: 20230290705Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate and a device region formed over the substrate. The semiconductor structure further includes an interconnect structure formed over the device region and a first passivation layer formed over the interconnect structure. The semiconductor structure also includes a metal pad formed over and extending into the first passivation layer and a second passivation layer formed over the first passivation layer. The second passivation layer includes a thermal conductive material, and the thermal conductivity of the thermal conductive material is higher than 4 W/mK.Type: ApplicationFiled: March 14, 2022Publication date: September 14, 2023Inventors: Cheng-Chin LEE, Shau-Lin SHUE, Shao-Kuan LEE, Hsiao-Kang CHANG, Cherng-Shiaw TSAI, Kai-Fang CHENG, Hsin-Yen HUANG, Ming-Hsien LIN, Chuan-Pu CHOU, Hsin-Ping CHEN, Chia-Tien WU, Kuang-Wei YANG
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Publication number: 20230282571Abstract: The present disclosure relates to an integrated chip that includes a substrate, a first metal line, and a hybrid metal line. The first metal line includes a first metal material and is within a first interlayer dielectric (ILD) layer over the substrate. The hybrid metal line is also within the first ILD layer. The hybrid metal line includes a pair of first metal segments that comprise the first metal material. The hybrid metal line further includes a second metal segment that comprises a second metal material that is different from the first metal material. The second metal segment is laterally between the pair of first metal segments.Type: ApplicationFiled: May 8, 2023Publication date: September 7, 2023Inventors: Pokuan Ho, Chia-Tien Wu, Hsin-Ping Chen, Wei-Chen Chu
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Publication number: 20230275018Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a first interconnect layer over a substrate, the first interconnect layer including a first conductive feature and a second conductive feature, forming a patterned mask on the first interconnect layer, one or more openings in the patterned mask overlaying the second conductive feature, recessing the second conductive feature through the one or more openings in the patterned mask, and forming a second interconnect layer over the first interconnect layer. The second interconnect layer includes a first via in contact with the first conductive feature and a second via in contact with the second conductive feature.Type: ApplicationFiled: June 4, 2022Publication date: August 31, 2023Inventors: Chia-Tien Wu, Wei-Chen Chu, Yu-Chieh Liao, Hsin-Ping Chen
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Patent number: 11682618Abstract: The present disclosure relates to an integrated chip that includes a substrate, a first metal line, and a hybrid metal line. The first metal line includes a first metal material and is within a first interlayer dielectric (ILD) layer over the substrate. The hybrid metal line is also within the first ILD layer. The hybrid metal line includes a pair of first metal segments that comprise the first metal material. The hybrid metal line further includes a second metal segment that comprises a second metal material that is different from the first metal material. The second metal segment is laterally between the pair of first metal segments.Type: GrantFiled: March 25, 2021Date of Patent: June 20, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Pokuan Ho, Chia-Tien Wu, Hsin-Ping Chen, Wei-Chen Chu
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Patent number: 11640924Abstract: The present disclosure provides a method of forming an integrated circuit structure. The method includes depositing a first metal layer on a semiconductor substrate; forming a hard mask on the first metal layer; patterning the first metal layer to form first metal features using the hard mask as an etch mask; depositing a dielectric layer of a first dielectric material on the first metal features and in gaps among the first metal features; performing a chemical mechanical polishing (CMP) process to both the dielectric layer and the hard mask; removing the hard mask, thereby having portions of the dielectric layer extruded above the metal features; forming an inter-layer dielectric (ILD) layer of the second dielectric material different from the first dielectric material; and patterning the ILD layer to form openings that expose the first metal features and are constrained to be self-aligned with the first metal features by the extruded portions of the first dielectric layer.Type: GrantFiled: May 7, 2021Date of Patent: May 2, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-I Yang, Yu-Chieh Liao, Chia-Tien Wu, Hsin-Ping Chen, Hai-Ching Chen, Shau-Lin Shue
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Publication number: 20230073811Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.Type: ApplicationFiled: November 10, 2022Publication date: March 9, 2023Inventors: Hsin-Ping Chen, Yung-Hsu Wu, Chia-Tien Wu, Min Cao, Ming-Han Lee, Shau-Lin Shue, Shin-Yi Yang
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Publication number: 20230067563Abstract: A method for manufacturing a semiconductor structure includes forming a plurality of dummy structures spaced apart from each other, forming a plurality of dielectric spacers laterally covering the dummy structures to form a plurality of trenches defined by the dielectric spacers, filling an conductive material into the trenches to form electrically conductive features, selectively depositing a capping material on the electrically conductive features to form a capping layer, removing the dummy structures to form a plurality of recesses defined by the dielectric spacers, filling a sacrificial material into the recesses so as to form sacrificial features, depositing a sustaining layer on the sacrificial features, and removing the sacrificial features to form air gaps confined by the sustaining layer and the dielectric spacers.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Wei SU, Chia-Tien WU, Hsin-Ping CHEN, Shau-Lin SHUE
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Publication number: 20230067527Abstract: A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Chen CHU, Chia-Tien WU, Chia-Wei SU, Yu-Chieh LIAO, Chia-Chen LEE, Hsin-Ping CHEN, Shau-Lin SHUE
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Publication number: 20220352019Abstract: Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a second contact feature over the first contact feature, a barrier layer between the second dielectric layer and the second contact feature, and a liner between the barrier layer and the second contact feature. An interface between the first contact feature and the second contact feature includes the liner but is free of the barrier layer.Type: ApplicationFiled: July 7, 2022Publication date: November 3, 2022Inventors: Hsin-Ping Chen, Ming-Han Lee, Shin-Yi Yang, Yung-Hsu Wu, Chia-Tien Wu, Shau-Lin Shue, Min Cao
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Publication number: 20220328351Abstract: The present disclosure provides a method of forming a semiconductor structure. The method includes providing a semiconductor substrate and forming a patterned metal structure on the semiconductor substrate, wherein the patterned metal structure includes a first metal layer and a second metal layer deposited in a single deposition step. The method further includes etching a portion of the second metal layer thereby forming a metal plug in the second metal layer, the first metal layer of the patterned metal structure having a first metal feature underlying and contacting the metal plug.Type: ApplicationFiled: June 13, 2022Publication date: October 13, 2022Inventors: Hsin-Ping Chen, Shau-Lin Shue, Min Cao
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Publication number: 20220310508Abstract: The present disclosure relates to an integrated chip that includes a substrate, a first metal line, and a hybrid metal line. The first metal line includes a first metal material and is within a first interlayer dielectric (ILD) layer over the substrate. The hybrid metal line is also within the first ILD layer. The hybrid metal line includes a pair of first metal segments that comprise the first metal material. The hybrid metal line further includes a second metal segment that comprises a second metal material that is different from the first metal material. The second metal segment is laterally between the pair of first metal segments.Type: ApplicationFiled: March 25, 2021Publication date: September 29, 2022Inventors: Pokuan Ho, Chia-Tien Wu, Hsin-Ping Chen, Wei-Chen Chu
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Publication number: 20220238676Abstract: A device includes a nanostructure, a gate dielectric layer, a gate electrode, and a gate contact. The nanostructure is over a substrate. The gate dielectric layer laterally surrounds the nanostructure. The gate electrode laterally surrounds the gate dielectric layer. The gate electrode has a bottom surface and a top surface both higher than a bottom end of the nanostructure. The gate electrode has a horizontal dimension decreasing from the bottom surface to the top surface. The gate contact is electrically coupled to the gate electrode.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yung-Chih WANG, Yu-Chieh LIAO, Tai-I YANG, Hsin-Ping CHEN