Abstract: A carrier structure is provided, in which at least one positioning area is defined on a chip-placement area of a package substrate, and at least one alignment portion is disposed on the positioning area. Therefore, the precision of manufacturing the alignment portion is improved by disposing the positioning area on the chip-placement area, such that the carrier structure can provide a better alignment mechanism for the chip placement operation.

Abstract: A method includes forming a dielectric layer over a contact pad of a device, forming a first polymer layer over the dielectric layer, forming a first conductive line and a first portion of a second conductive line over the first polymer layer, patterning a photoresist to form an opening over the first portion of the second conductive feature, wherein after patterning the photoresist the first conductive line remains covered by photoresist, forming a second portion of the second conductive line in the opening, wherein the second portion of the second conductive line physically contacts the first portion of the second conductive line, and forming a second polymer layer extending completely over the first conductive line and the second portion of the second conductive line.

Abstract: Disclosed is a tungsten-doped lithium manganese iron phosphate-based particulate for a cathode of a lithium-ion battery. The particulates include a composition represented by a formula of LixMn0.998-y-zFeyMzW0.002PaO4a±p/C, wherein x, y, z, a, p, and M are as defined herein. Also disclosed is a powdery material including the particulates, and a method for preparing the powdery material.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: Example implementations relate to computing devices with movable input/output (I/O) connectors. For example, a computing device may include a chassis of the computing device and an I/O connector to connect an I/O device to the computing device. The I/O connector may be movable about an axis relative to the chassis by at least 180 degrees such that the I/O connector is accessible from multiple sides of the chassis.

Abstract: A television set is connected to a sensor and a height adjusting apparatus. The sensor detects location information of a user, a watching mode of the user, a visual angle of the user and a neck deviation angle of the user, by using the sensor when the television set is turned on. The television set calculates a proper height for the user under different watching modes, according to the location information of the user, the watching mode of the user, and the visual angle and the neck deviation angle of the user. The television set further controls the height adjusting apparatus to adjust the visual height of the television set according to the calculated proper height of the television. A method for automatically adjusting the visual height of the television set is also provided.

Abstract: Example implementations relate to computing devices with movable input/output (I/O) connectors. For example, a computing device may include a chassis of the computing device and an I/O connector to connect an I/O device to the computing device. The I/O connector may be movable about an axis relative to the chassis by at least 180 degrees such that the I/O connector is accessible from multiple sides of the chassis.

Abstract: In a seat height adjustment method for a chair, a body height of a user of an electronic device is acquired from the electronic device which is in communication with the chair. The method further computes a target seat height suitable for the user according to the user's body height and a preset formula. The lifting device can automatically adjust the seat height for a user when the user has leave the chair and further returning the seat of the chair to an original height.

Abstract: A television set is connected to a sensor and a height adjusting apparatus. The sensor detects location information of a user, a watching mode of the user, a visual angle of the user and a neck deviation angle of the user, by using the sensor when the television set is turned on. The television set calculates a proper height for the user under different watching modes, according to the location information of the user, the watching mode of the user, and the visual angle and the neck deviation angle of the user. The television set further controls the height adjusting apparatus to adjust the visual height of the television set according to the calculated proper height of the television. A method for automatically adjusting the visual height of the television set is also provided.

Abstract: In a seat height adjustment method for a chair, a body height of a user of an electronic device is acquired from the electronic device which is in communication with the chair. The method further computes a target seat height suitable for the user according to the user's body height and a preset formula. The lifting device can automatically adjust the seat height for a user when the user has leave the chair and further returning the seat of the chair to an original height.

Abstract: A method of fabricating an ESD protection circuit without salicide formation is described. First, the isolation regions, the dielectric layer, the gate structures, the resistors, the end capacitor electrodes and the doped regions are formed on the substrate. Next, the ESD areas and the capacitor areas are defined as the non-photolithography (i.e., non-photoresist) areas. Next, ion implantation is performed in the ESD areas and the capacitor areas. Next, an oxide layer is formed on the sidewall spacers of the gate structures, resistors, and end capacitor electrodes. Next, an oxide layer is formed over entire semiconductor substrate. Next, the oxide layer at the active areas is removed and than salicide process is performed.