Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a standard contact disposed within a dielectric structure on a substrate. An oversized contact is disposed within the dielectric structure and is laterally separated from the standard contact. The oversized contact has a larger width than the standard contact. An interconnect wire vertically contacts the oversized contact. A through-substrate via (TSV) vertically extends through the substrate. The TSV physically and vertically contacts the oversized contact or the interconnect wire. The TSV vertically overlaps the oversized contact or the interconnect wire over a non-zero distance.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes top, bottom, and middle tiers. The bottom tier includes a first interconnect structure overlying a first semiconductor substrate, and a first front-side bonding structure overlying the first interconnect structure. The middle tier interposed between and electrically coupled to the top and bottom tiers includes a second interconnect structure overlying a second semiconductor substrate, a second front-side bonding structure interposed between the top tier and the second interconnect structure, and a back-side bonding structure interposed between the second semiconductor substrate and the first front-side bonding structure.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a second IC die is bonded to a first IC die. The first IC die includes a first semiconductor substrate and a first interconnect structure over the first semiconductor substrate. The second IC die includes a second semiconductor substrate and a second interconnect structure over the second semiconductor substrate. A plurality of electrical coupling structures is arranged at the peripheral region of the first semiconductor device and the second semiconductor device. The plurality of electrical coupling structures respectively comprises a through silicon via (TSV) disposed in the second semiconductor substrate and electrically coupled to the first semiconductor device through a stack of wiring layers and inter-wire vias.

Abstract: In some embodiments, the present disclosure relates to method of forming an integrated circuit, including forming a semiconductor device on a frontside of a semiconductor substrate; depositing a dielectric layer over a backside of the semiconductor substrate; patterning the dielectric layer to form a first opening in the dielectric layer so that the first opening exposes a surface of the backside of the semiconductor substrate; depositing a glue layer having a first thickness over the first opening; filling the first opening with a first material to form a backside contact that is separated from the semiconductor substrate by the glue layer; and depositing more dielectric layers, bonding contacts, and bonding wire layers over the dielectric layer to form a second bonding structure on the backside of the semiconductor substrate, so that the backside contact is coupled to the bonding contacts and the bonding wire layers.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a second IC die is bonded to a first IC die. A seal-ring structure is arranged in a peripheral region of the 3D IC in the first IC die and the second IC die. The seal-ring structure extends from a first semiconductor substrate of the first IC die to a second semiconductor substrate of the second IC die. A plurality of through silicon via (TSV) coupling structures is arranged at the peripheral region of the 3D IC along an inner perimeter of the seal-ring structure closer to the 3D IC than the seal-ring structure. The plurality of TSV coupling structures respectively comprises a TSV disposed in the second semiconductor substrate and electrically coupling to the 3D IC through a stack of TSV wiring layers and inter-wire vias.

Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface; a plurality of pixel sensors disposed in the substrate, a sensor isolation feature disposed in the substrate defining an active region, and a dielectric layer between the sensor isolation feature and the substrate, wherein the sensor isolation feature comprises a conductive material.

Abstract: Some embodiments relate to a method. In the method, semiconductor devices are formed on a frontside of a semiconductor substrate. A trench is formed in a backside of the semiconductor substrate. Conductive and insulating layers are alternatingly formed in the trench on the backside of the semiconductor substrate to establish a backside capacitor. A backside interconnect structure is formed on the backside of the semiconductor substrate to couple to capacitor electrodes of the backside capacitor.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes top, bottom, and middle tiers. The bottom tier includes a first interconnect structure overlying a first semiconductor substrate, and a first front-side bonding structure overlying the first interconnect structure. The middle tier interposed between and electrically coupled to the top and bottom tiers includes a second interconnect structure overlying a second semiconductor substrate, a second front-side bonding structure interposed between the top tier and the second interconnect structure, and a back-side bonding structure interposed between the second semiconductor substrate and the first front-side bonding structure.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first inter-metal dielectric (IMD) structure disposed over a semiconductor substrate. A metal-insulator-metal (MIM) device is disposed over the first IMD structure. The MIM device comprises at least three metal plates that are spaced from one another. The MIM device further comprises a plurality of capacitor insulator structures, where each of the plurality of capacitor insulator structures are disposed between and electrically isolate neighboring metal plates of the at least three metal plates.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a second IC die is bonded to a first IC die. The first IC die includes a first semiconductor substrate and a first interconnect structure over the first semiconductor substrate. The second IC die includes a second semiconductor substrate and a second interconnect structure over the second semiconductor substrate. A plurality of electrical coupling structures is arranged at the peripheral region of the first semiconductor device and the second semiconductor device. The plurality of electrical coupling structures respectively comprises a through silicon via (TSV) disposed in the second semiconductor substrate and electrically coupled to the first semiconductor device through a stack of wiring layers and inter-wire vias.

Abstract: Methods and devices of having an enclosure structure formed in a multi-layer interconnect and a through-silicon-via (TSV) extending through the enclosure structure. In some implementations, a protection layer is formed between the enclosure structure and the TSV.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a first substrate, a capacitor within the first substrate, a diode structure within the first substrate adjacent the capacitor, and a first interconnect structure over the capacitor and the diode structure. A first conductive via of the first interconnect structure electrically couples the capacitor to the diode structure.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a semiconductor substrate including a front surface and a back surface; a backside metallization layer formed over the semiconductor substrate, the backside metallization layer being closer to the back surface than to the front surface of the semiconductor substrate, at least a portion of the backside metallization layer forming an inductor structure; and an electrically non-conductive material formed in the semiconductor substrate, the electrically non-conductive material at least partially overlapping the inductor structure from a top view, and the electrically non-conductive material including a top surface, a bottom surface, and sidewalls, the top surface being adjacent to the back surface of the semiconductor substrate. A method for manufacturing a semiconductor structure is also disclosed.

Abstract: A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, the 3D IC comprises a first IC die comprising a first substrate, a first interconnect structure disposed over the first substrate, and a first through substrate via(TSV) disposed through the first substrate. The 3D IC further comprises a second IC die comprising a second substrate, a second interconnect structure disposed over the second substrate, and a second TSV disposed through the second substrate. The 3D IC further comprises a bonding structure arranged between back sides of the first IC die and the second IC die opposite to corresponding interconnect structures and bonding the first IC die and the second IC die. The bonding structure comprises conductive features disposed between and electrically connecting the first TSV and the second TSV.

Abstract: A method for manufacturing three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, a second IC die is formed and bonded to a first IC die by a first bonding structure. A third IC die is formed and bonded to the second IC die by a second bonding structure. The second bonding structure is formed between back sides of the second IC die and the third IC die opposite to corresponding interconnect structures and comprises a first TSV (through substrate via) disposed through a second substrate of the second IC die and a second TSV disposed through a third substrate of the third IC die. In some further embodiments, the second bonding structure is formed by forming conductive features with oppositely titled sidewalls disposed between the first TSV and the second TSV.

Abstract: Some embodiments relate to a semiconductor structure including a semiconductor substrate having a frontside surface and a backside surface. An interconnect structure is disposed over the frontside surface. The interconnect structure includes a plurality of metal lines and vias that operably couple semiconductor transistor devices disposed in or on the frontside surface of the semiconductor substrate to one another. A trench is disposed in the backside surface of the semiconductor substrate. The trench is filled with an inner capacitor electrode, a capacitor dielectric layer overlying the inner capacitor electrode, and an outer capacitor electrode overlying the capacitor dielectric layer.

Abstract: Some embodiments relate to a semiconductor structure including a semiconductor substrate, and n interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a dielectric structure and a plurality of metal lines that are stacked over one another in the dielectric structure. A through substrate via (TSV) extends through the semiconductor substrate to contact a metal line of the plurality of metal lines. A protective sleeve is disposed along outer sidewalls of the TSV and separates the outer sidewalls of the TSV from the dielectric structure of the interconnect structure.

Abstract: A semiconductor device includes a substrate having a front side and a back side opposite to each other. A plurality of photodetectors is disposed in the substrate within a pixel region. An isolation structure is disposed within the pixel region and between the photodetectors. The isolation structure includes a back side isolation structure extending from the back side of the substrate to a position in the substrate. A conductive plug structure is disposed in the substrate within a periphery region. A conductive cap is disposed on the back side of the substrate and extends from the pixel region to the periphery region and electrically connects the back side isolation structure to the conductive plug structure. A conductive contact lands on the conductive plug structure, and is electrically connected to the back side isolation structure through the conductive plug structure and the conductive cap.

Abstract: Present disclosure provides a semiconductor structure, including a semiconductor substrate, a first metal layer, and a through substrate via (TSV). The semiconductor substrate has an active side. The first metal layer is closest to the active side of the semiconductor substrate, and the first metal layer has a first continuous metal feature. The TSV is extending from the semiconductor substrate to the first continuous metal feature. A width of the TSV at the first metal layer is wider than a width of the first continuous metal feature. Present disclosure also provides a method for manufacturing the semiconductor structure described herein.

Abstract: In some embodiments, the present disclosure relates to a 3D integrated circuit (IC) stack that includes a first IC die bonded to a second IC die. The first IC die includes a first semiconductor substrate, a first interconnect structure arranged on a frontside of the first semiconductor substrate, and a first bonding structure arranged over the first interconnect structure. The second IC die includes a second semiconductor substrate, a second interconnect structure arranged on a frontside of the second semiconductor substrate, and a second bonding structure arranged on a backside of the second semiconductor substrate. The first bonding structure faces the second bonding structure. Further, the 3D IC stack includes a first backside contact that extends from the second bonding structure to the backside of the second semiconductor substrate and is thermally coupled to at least one of the first or second interconnect structures.