Patents by Inventor Hsing-Kan Peng

Hsing-Kan Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of patterning metal alloy material layer having hafnium and molybdenum
    Patent number: 8691705
    Abstract: A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: April 8, 2014
    Assignee: Nanya Technology Corporation
    Inventors: Chih-Wei Huang, Chao-Sung Lai, Hsing-Kan Peng, Chung-Yuan Lee, Shian-Jyh Lin
  • METHOD OF PATTERNING METAL ALLOY MATERIAL LAYER HAVING HAFNIUM AND MOLYBDENUM
    Publication number: 20110226736
    Abstract: A method of patterning a metal alloy material layer having hafnium and molybdenum. The method includes forming a patterned mask layer on a metal alloy material layer having hafnium and molybdenum on a substrate. The patterned mask layer is used as a mask and an etching process is performed using an etchant on the metal alloy material layer having hafnium and molybdenum so as to form a metal alloy layer having hafnium and molybdenum. The etchant includes at least nitric acid, hydrofluoric acid and sulfuric acid. The patterned mask layer is removed.
    Type: Application
    Filed: May 31, 2011
    Publication date: September 22, 2011
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventors: Chih-Wei Huang, Chao-Sung Lai, Hsing-Kan Peng, Chung-Yuan Lee, Shian-Jyh Lin
  • Semiconductor device and method of manufacturing the same
    Patent number: 7911028
    Abstract: A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.
    Type: Grant
    Filed: July 31, 2008
    Date of Patent: March 22, 2011
    Assignee: Nanya Technology Corp.
    Inventors: Shian-Jyh Lin, Chih-Wei Huang, Chao-Sung Lai, Hsing-Kan Peng
  • TRANSISTOR STRUCTURE AND METHOD OF MAKING THE SAME
    Publication number: 20100025778
    Abstract: A transistor includes a gate structure of HfMoN. The work function of the gate structure can be modulated by doping the HfMoN with dopants including nitride, silicon or germanium. The gate structure of HfMoN of the present invention is applicable to PMOS, NMOS or CMOS transistors.
    Type: Application
    Filed: July 31, 2008
    Publication date: February 4, 2010
    Inventors: Chao-Sung Lai, Hsing-Kan Peng, Shian-Jyh Lin, Chung-Yuan Lee
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20100025815
    Abstract: A semiconductor device including a metallic compound Hfx1Moy1Nz1 as an electrode. The work function of the electrode can be modulated by doping the metallic compound with dopants including nitrogen, silicon or germanium. The metallic compound of the present invention is applicable to PMOS, NMOS, CMOS transistors and capacitors.
    Type: Application
    Filed: July 31, 2008
    Publication date: February 4, 2010
    Inventors: Shian-Jyh Lin, Chih-Wei Huang, Chao-Sung Lai, Hsing-Kan Peng
  • ETCHANT FOR METAL ALLOY HAVING HAFNIUM AND MOLYBDENUM
    Publication number: 20090146101
    Abstract: An etchant for etching a metal alloy having hafnium and molybdenum includes 20 to 80 percent by weight of nitric acid, 1 to 49 percent by weight of hydrofluoric acid, 1 to 96 percent by weight of sulfuric acid, and 1 to 30 percent by weight of water, based on the total weight of the etchant.
    Type: Application
    Filed: April 15, 2008
    Publication date: June 11, 2009
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventors: Chih-Wei Huang, Chao-Sung Lai, Hsing-Kan Peng, Chung-Yuan Lee, Shian-Jyh Lin