Abstract: A multifunction warning device is provided for being used as a flashlight, a warning sign or an illuminating traffic baton. The multifunction warning device mainly contains a base, plural legs, and a rechargeable device. The base has a top portion and a bottom portion having a first electric socket therein. Each of the plural legs is pivotally secured to the base. Each of the plural legs has plural illuminating elements thereon. The plural illuminating elements are electrically connected to the first electric socket. The rechargeable device contains a shell, plural rechargeable batteries, a charging circuit, and a discharging circuit. The shell has a charging connector detachably plugged into the first electric socket and thereby electric power is provided from the rechargeable batteries to the illuminating elements. The plural legs are stretchable to be a support and retractable to be assembled as a baton.

Abstract: A multifunction warning device can be used as a flashlight, a warning sign and an illuminating traffic baton. The multifunction warning device mainly contains: a manual power generator, a lamp, a seat, a storage battery, and plural legs. The lamp is secured and electronically connected to a head end of the manual power generator. The seat is connected the manual power generator. The seat has a socket therein. The storage battery has an automobile charging connector removably attached to the socket of the seat. Each of the plural legs contains: a longitude frame and a light pervious shell. The longitude frame has plural LEDs thereon. The longitude frame is pivotally secured to the seat. The light pervious shell is fastened to the longitude frame. The plural legs can be assembled to a baton body.

Abstract: A mixed mode device. A polysilicon layer is over a substrate having a well therein. A first metal layer is formed over the polysilicon layer. A second metal layer is formed over the first metal layer. A conductive type of the well and a conductive type of the substrate are oppositive. A part of the polysilicon layer is positioned over the well. Heavily doped regions are further formed in the well beside the polysilicon layer. The polysilicon layer is used as gates of MOS transistors, and the heavily doped regions are used as source/drain regions of the MOS transistors. The first metal layer over the gate has a finger structure which electrically couples with the drain regions of the MOS transistors. The second metal layer electrically couples with the source regions through vias.