Abstract: An electronic device is provided. The electronic device includes a first insulating layer, a second insulating layer, an adhesive layer, and a functional layer. The first insulating layer has a side surface and at least one recess adjacent to the side surface. The second insulating layer is disposed on the first insulating layer and filled in the at least one recess. The adhesive layer is disposed on the second insulating layer. The functional layer is disposed on the adhesive layer. In addition, in a cross-sectional view of the electronic device, the second insulating layer has a thickness at a first position, and a thickness of the adhesive layer corresponding to the first position is greater than the thickness of the second insulating layer.

Abstract: A method for producing jelly bobas includes steps providing an apparatus for producing jelly bobas comprising a tank, a cutting set and a pool, wherein the tank comprises a main body and a bottom plate, the bottom plate comprises a plurality of holes and the cutting set is positioned under the bottom plate; continuously pouring a gel into the tank, wherein the gel has a viscosity ranged between 25000 and 95000 cps at 6 rpm or between 30000 and 180000 cps at 3 rpm as measured with LV-4 spindle of Brookfield Viscometer; the gel continuously passing through the plurality of holes by means of a gravity thereof; the cutting set continuously cutting off the gel passed through the plurality of holes in a rotation manner for continuously forming a plurality of jelly bobas; and the pool receiving the plurality of jelly bobas and a solidifying agent contained therein shaping the jelly bobas.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device comprises a substrate, a first gate electrode, a second gate electrode, a first doped region, a second doped region, a third doped region, and a first interconnection structure. The substrate comprises a well region of a first conductive type. The first and second gate electrodes are disposed on the substrate. The first, second, and third doped regions are embedded within the well region and are of the first conductive type. The first interconnection structure electrically connects the first gate electrode and the second gate electrode. The first doped region and the second doped region are disposed on opposite sides of the first gate electrode.

Abstract: A cell layout design for an integrated circuit. In one embodiment, the integrated circuit includes a dual-gate cell forming two transistors connected with each other via a common source/drain terminal. The dual-gate cell includes an active region, two gate lines extending across the active region, at least one first gate via disposed on one or both of the two gate lines and overlapped with the active region, and second gate vias disposed on one or both of the two gate lines and located outside the active region.