Patents by Inventor Hsiu-Yung LIN

Hsiu-Yung LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fill structures with air gaps
    Patent number: 11961884
    Abstract: The present disclosure describes a semiconductor device with a fill structure. The semiconductor structure includes first and second fin structures on a substrate, an isolation region on the substrate and between the first and second fin structures, a first gate structure disposed on the first fin structure and the isolation region, a second gate structure disposed on the second fin structure and the isolation region, and the fill structure on the isolation region and between the first and second gate structures. The fill structure includes a dielectric structure between the first and second gate structures and an air gap enclosed by the dielectric structure. The air gap is below top surfaces of the first and second fin structures.
    Type: Grant
    Filed: December 13, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiu-Yung Lin, Yen Chuang, Min-Hao Hong
  • FILL STRUCTURES WITH AIR GAPS
    Publication number: 20220320273
    Abstract: The present disclosure describes a semiconductor device with a fill structure. The semiconductor structure includes first and second fin structures on a substrate, an isolation region on the substrate and between the first and second fin structures, a first gate structure disposed on the first fin structure and the isolation region, a second gate structure disposed on the second fin structure and the isolation region, and the fill structure on the isolation region and between the first and second gate structures. The fill structure includes a dielectric structure between the first and second gate structures and an air gap enclosed by the dielectric structure. The air gap is below top surfaces of the first and second fin structures.
    Type: Application
    Filed: December 13, 2021
    Publication date: October 6, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsiu-Yung LIN, Yen CHUANG, Min-Hao HONG