Patents by Inventor Hsi-Wen Lee

Hsi-Wen Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240194523
    Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes an interconnect dielectric layer over a substrate. An interconnect via is within the interconnect dielectric layer, and an interconnect wire is over the interconnect via and within the interconnect dielectric layer. A protective layer surrounds the interconnect via. The interconnect via vertically extends through the protective layer to below a bottom of the protective layer. The protective layer continuously extends from along an outer sidewall of the interconnect via to along an outer sidewall of the interconnect wire in a first cross-sectional view.
    Type: Application
    Filed: February 21, 2024
    Publication date: June 13, 2024
    Inventors: Hsi-Wen Tien, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Yu-Teng Dai, Wei-Hao Liao
  • Publication number: 20240145380
    Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a barrier structure is arranged directly over the interconnect wire. The integrated chip further includes an etch stop layer arranged over the barrier structure and surrounds outer sidewalls of the barrier structure. A second interconnect dielectric layer is arranged over the etch stop layer, and an interconnect via extends through the second interconnect dielectric layer, the etch stop layer, and the barrier structure to contact the interconnect wire.
    Type: Application
    Filed: January 5, 2024
    Publication date: May 2, 2024
    Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai
  • Patent number: 11972975
    Abstract: A method of forming a semiconductor device structure is provided. The method includes forming a masking structure with first openings over a semiconductor substrate and correspondingly forming metal layers in the first openings. The method also includes recessing the masking structure to form second openings between the metal layers and forming a sacrificial layer surrounded by a first liner in each of the second openings. In addition, after forming a second liner over the sacrificial layer in each of the second openings, the method includes removing the sacrificial layer in each of the second openings to form a plurality of air gaps therefrom.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: April 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai, Hsin-Chieh Yao, Chih-Wei Lu, Chung-Ju Lee, Shau-Lin Shue
  • Publication number: 20240120200
    Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises receiving a structure including a substrate and a first hard mask over the substrate, the first hard mask having at least two separate portions; forming spacers along sidewalls of the at least two portions of the first hard mask with a space between the spacers; forming a second hard mask in the space; forming a first cut in the at least two portions of the first hard mask; forming a second cut in the second hard mask; and depositing a cut hard mask in the first cut and the second cut.
    Type: Application
    Filed: December 18, 2023
    Publication date: April 11, 2024
    Inventors: Hsi-Wen Tien, Wei-Hao Liao, Pin-Ren Dai, Chih Wei Lu, Chung-Ju Lee
  • Patent number: 11942364
    Abstract: In some embodiments, the present disclosure relates to a method of forming an interconnect. The method includes forming an etch stop layer (ESL) over a lower conductive structure and forming one or more dielectric layers over the ESL. A first patterning process is performed on the one or more dielectric layers to form interconnect opening and a second patterning process is performed on the one or more dielectric layers to increase a depth of the interconnect opening and expose an upper surface of the ESL. A protective layer is selectively formed on sidewalls of the one or more dielectric layers forming the interconnect opening. A third patterning process is performed to remove portions of the ESL that are uncovered by the one or more dielectric layers and the protective layer and to expose the lower conductive structure. A conductive material is formed within the interconnect opening.
    Type: Grant
    Filed: July 20, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsi-Wen Tien, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Yu-Teng Dai, Wei-Hao Liao
  • Publication number: 20240088022
    Abstract: Some embodiments relate to an integrated chip including a plurality of conductive structures over a substrate. A first dielectric layer is disposed laterally between the conductive structures. A spacer structure is disposed between the first dielectric layer and the plurality of conductive structures. An etch stop layer overlies the plurality of conductive structures. The etch stop layer is disposed on upper surfaces of the spacer structure and the first dielectric layer.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Yu-Teng Dai, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Hsi-Wen Tien, Wei-Hao Liao
  • Patent number: 11923293
    Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a barrier structure is arranged directly over the interconnect wire. The integrated chip further includes an etch stop layer arranged over the barrier structure and surrounds outer sidewalls of the barrier structure. A second interconnect dielectric layer is arranged over the etch stop layer, and an interconnect via extends through the second interconnect dielectric layer, the etch stop layer, and the barrier structure to contact the interconnect wire.
    Type: Grant
    Filed: July 8, 2021
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin-Chieh Yao, Chung-Ju Lee, Chih Wei Lu, Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai
  • Patent number: 11915943
    Abstract: A semiconductor structure includes a conductive feature disposed over a semiconductor substrate, a via disposed in a first interlayer dielectric (ILD) layer over the conductive feature, and a metal-containing etch-stop layer (ESL) disposed on the via, where the metal-containing ESL includes a first metal and is resistant to etching by a fluorine-containing etchant. The semiconductor structure further includes a conductive line disposed over the metal-containing ESL, where the conductive line includes a second metal different from the first metal and is etchable by the fluorine-containing etchant, and where the via is configured to interconnect the conductive line to the conductive feature. Furthermore, the semiconductor structure includes a second ILD layer disposed over the first ILD layer.
    Type: Grant
    Filed: October 25, 2021
    Date of Patent: February 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Hao Liao, Hsi-Wen Tien, Chih Wei Lu, Pin-Ren Dai, Chung-Ju Lee
  • Publication number: 20220391875
    Abstract: A portable point-of-sale terminal is provided, including: a communication module configured to search for a network signal of a wireless network base station for communication; a transaction module configured to perform a transaction procedure; a detection module configured to perform a detection procedure for detecting a signal strength and a network channel of the wireless network base station; a processing module configured to: when the transaction module starts the transaction procedure, drive the detection module to perform the detection procedure; and when it is detected that the signal strength meets a default condition, allow the transaction procedure, and generate a prompt signal to be completed; or when it is detected that the signal strength does not meet the default condition, generate a warning signal; and a display module configured to display prompt information or warning information.
    Type: Application
    Filed: August 28, 2020
    Publication date: December 8, 2022
    Inventors: Attlee Lo, Hsi-Wen Lee, Tsung-Hsin Shen
  • Publication number: 20220027885
    Abstract: A portable point-of-sale terminal is provided, including: a communication module configured to search for a network signal of a wireless network base station for communication; a transaction module configured to perform a transaction procedure; a detection module configured to perform a detection procedure for detecting a signal strength and a network channel of the wireless network base station; a processing module configured to: when the transaction module starts the transaction procedure, drive the detection module to perform the detection procedure; and when it is detected that the signal strength meets a default condition, allow the transaction procedure, and generate a prompt signal to be completed; or when it is detected that the signal strength does not meet the default condition, generate a warning signal; and a display module configured to display prompt information or warning information.
    Type: Application
    Filed: August 28, 2020
    Publication date: January 27, 2022
    Inventors: Attlee Lo, Hsi-Wen Lee, Tsung-Hsin Shen
  • Patent number: 9474132
    Abstract: A light control device and system and a method of light control are disclosed. The light control system includes an editing device and a light control device. The editing device includes an editing module, a screen, and a wireless communication module. The editing module includes an editing interface including an input block. The screen displays the editing interface. When the input block is activated, the editing module records the time of the activation of the input block in a light control pattern. The wireless communication module receives the light control pattern for transmission. The light control device includes a network module and a control module. The network module receives the light control pattern via wireless communication protocol. The control module generates a set of light control commands in accordance with the light control pattern and outputs the set of light control commands for controlling one or more lighting device.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: October 18, 2016
    Assignee: UNIFORM INDUSTRIAL CORP.
    Inventor: Hsi-Wen Lee
  • Patent number: D816712
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: May 1, 2018
    Assignee: UNIFORM INDUSTRIAL CORP.
    Inventor: Hsi-Wen Lee