Abstract: An integrated circuit device includes an interconnect layer, a memory structure, a third conductive feature, and a fourth conductive feature. The interconnect layer includes a first conductive feature and a second conductive feature. The memory structure is over and in contact with the first conductive feature. The memory structure includes at least a resistance switching element over the first conductive feature. The third conductive feature, including a first conductive line, is over and in contact with the second conductive feature. The fourth conductive feature is over and in contact with the memory structure. The fourth conductive feature includes a second conductive line, a top surface of the first conductive line is substantially level with a top surface of the second conductive line, and a bottom surface of the first conductive line is lower than a bottommost portion of a bottom surface of the second conductive line.

Abstract: A method for allocating perishable products based on machine learning, includes using a sales estimation model to evaluate estimated sales of a plurality of perishable products in a predetermined period, using a rating model to calculate a predetermined rate of the plurality of perishable products in the predetermined period according to the estimated sales, using an allocation model to adjust an allocation ratio of the plurality of perishable products in a plurality of marketing channels according to the estimated sales and the predetermined rate if a current rate is lower than the predetermined rate, and determining the numbers of perishable products allocated to the plurality of marketing channels according to the allocation ratio.

Abstract: A rate adjustment method includes a rate estimation model generating a plurality of estimated rates according to a plurality of training data, a revenue estimation model generating an estimated revenue according to the plurality of estimated rates, updating the rate estimation model according to the estimated revenue to generate an updated rate estimation model, and inputting a plurality of current data into the updated rate estimation model to update the plurality of estimated rates.

Abstract: A development system and a method of an offline software-in-the-loop simulation are disclosed. A common firmware architecture generates a chip control program. The common firmware architecture has an application layer and a hardware abstraction layer. The application layer has a configuration header file and a product program. A processing program required by a peripheral module is added to the hardware abstraction layer during compiling. The chip control program is provided to a controller chip or a circuit simulation software to be executed to control the product-related circuit through controlling the peripheral module.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

Abstract: A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

Abstract: A high-dynamic-range (HDR) detecting system includes a camera module comprising an image sensor; and a vision module that receives data generated by the camera module and accordingly transmits feedback to the camera module. The camera module comprises a multiple-exposure unit that provides different exposure settings, according to which a plurality of images are captured by the image sensor. The vision module comprises an object detection device that detects objects in the plurality of images, thereby resulting in object detection results as metadata.

Abstract: A structured-light scanning system with thermal compensation includes a structured-light projector that generates a predetermined projected pattern of light, which is then projected onto and reflected from an object, thereby resulting in a reflected pattern of light; an image sensor that captures the reflected pattern of light; and a digital processing unit that generates a depth map according to the reflected pattern of light and a compensated projected pattern associated with a current temperature.

Abstract: Systems and methods are provided that may be implemented in a real time manner by an information handling system (the “client system”) to monitor one or more characteristics of a voice over internet protocol (VOIP) discussion, to use these monitored VOIP characteristics to identify one or more condition/s in real time as they are identified to occur during the current VOIP discussion, and to determine to take one or more automatic actions based on the identified VOIP condition/s so as to inform and/or alert a current human user of the client system to the occurrence of the identified VOIP condition/s as they occur.

Abstract: A container includes a bottom box and a top lid. The bottom box includes a containing space adapted to contain the contents. The bottom box has a tilted shape wherein the bottom box has one side height greater than another side height. The top lid includes an integrally formed lens and formed with a plurality of air holes on a top surface thereof. The top lid is removably assembled with the bottom box.

Abstract: A container includes a bottom box and a top lid. The bottom box includes a containing space adapted to contain the contents. The bottom box has a tilted shape wherein the bottom box has one side height greater than another side height. The top lid includes an integrally formed lens and formed with a plurality of air holes on a top surface thereof. The top lid is removably assembled with the bottom box.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: The invention unexpectedly found that an isolated and modified QPSC population has multi-potentiality, including: osteoblasts (bone cells), chondrocytes (cartilage cells), and adipocytes (fat cells). The QPSC population of the invention features a desirable immunomodulation ability, including inducing, enhancing, or suppressing an immune response and thus has potential value in the prevention and/or treatment of various immune diseases/disorders/conditions. The invention has effective homing ability and regulation ability in complement-dependent cytotoxicity, including the ability to block the activation of host complements and direct migration to the target area and the ability to enhance cell viability, and thus offers better cell protection and therapeutic efficacy in vivo in the prevention and/or treatment of various acute tissue injury, ischemic or degenerative diseases/disorders/conditions.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: Systems and methods are provided that may be implemented in a real time manner by an information handling system (the “client system”) to monitor one or more characteristics of a voice over internet protocol (VOIP) discussion, to use these monitored VOIP characteristics to identify one or more condition/s in real time as they are identified to occur during the current VOIP discussion, and to determine to take one or more automatic actions based on the identified VOIP condition/s so as to inform and/or alert a current human user of the client system to the occurrence of the identified VOIP condition/s as they occur.

Abstract: A semiconductor device includes: a fin structure disposed on a substrate; a gate feature that traverses the fin structure to overlay a central portion of the fin structure; a pair of source/drain features, along the fin structure, that are disposed at respective sides of the gate feature; and a plurality of contact structures that are formed of tungsten, wherein a gate electrode of the gate feature and the pair of source/drain features are each directly coupled to a respective one of the plurality of contact structures.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.