Abstract: The present disclosure is directed towards an integrated chip including a heater structure overlying a semiconductor substrate. A phase change element (PCE) is disposed over the heater structure. A thermal barrier structure is disposed between the heater structure and the PCE. Outer sidewalls of the PCE are spaced laterally between outer sidewalls of the thermal barrier structure.

Abstract: A slide rail mechanism is configured to be mounted to a first post and a second post of a rack. A transverse space is defined between the first post and the second post. The slide rail mechanism includes a first slide rail kit and a second slide rail kit. Each of the slide rail kits includes a fixed rail and a movable rail longitudinally movable relative to the fixed rail. The two fixed rails are respectively connected to the two posts, and are located outside the transverse space. Each of the fixed rails is formed with a passage corresponding to inside of the transverse space. Each of the movable rail is configured to be movably mounted to the passage.

Abstract: Device structures and methods for forming the same are provided. A device structure according to the present disclosure includes a first electrode and a second electrode disposed over an etch stop layer (ESL), a first dielectric layer disposed between the first electrode and the second electrode, a phase-change material layer disposed over the first electrode, the first dielectric layer and the second electrode, an insulator layer disposed over the phase-change material layer, a metal feature disposed over the insulator layer, and a second dielectric layer disposed over the insulator layer, the first electrode, the second electrode, and the metal feature.

Abstract: A dielectric isolation layer having a planar top surface is formed over a substrate. A first electrode and a second electrode are formed over the planar top surface. An insulating matrix layer is formed around the first electrode and the second electrode. A phase change material (PCM) line is formed over the insulating matrix layer. A first end portion of the PCM line contacts a top surface of the first electrode and a second end portion of the PCM line contacts a top surface of the second electrode. A dielectric encapsulation layer is formed on sidewalls of the PCM line and over the PCM line and over a top surface of the insulating matrix layer. A heater line is formed prior to, or after, formation of the PCM line. The heater line underlies the PCM line or overlies the PCM line. A PCM switch device may be provided.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a memory cell stack over a substrate. The memory cell stack includes a top electrode. A sidewall spacer structure is formed around the memory cell stack. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. A dielectric structure is formed over the sidewall spacer structure. A first etch process is performed on the dielectric structure and the second sidewall spacer layer to define an opening above the top electrode. The second sidewall spacer layer and the dielectric structure are etched at a higher rate than the protective sidewall spacer layer during the first etch process. A top electrode via is formed within the opening.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a memory cell stack over a substrate. The memory cell stack includes a top electrode. A sidewall spacer structure is formed around the memory cell stack. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. A dielectric structure is formed over the sidewall spacer structure. A first etch process is performed on the dielectric structure and the second sidewall spacer layer to define an opening above the top electrode. The second sidewall spacer layer and the dielectric structure are etched at a higher rate than the protective sidewall spacer layer during the first etch process. A top electrode via is formed within the opening.

Abstract: A heat dissipation module is provided. The heat dissipation module includes a heat dissipating sheet and a heat conduction member. The heat dissipating sheet has a first surface and a second surface. The heat conduction member is disposed on the first surface of the heat dissipating sheet, and the second surface of the heat dissipating sheet is configured to be arranged adjacent to a periphery of a heating source. At least a part of a surface of the heat conduction member that is adjacent to the first surface has an uneven surface.

Abstract: An embodiment phase-change memory device includes a first electrode formed over an interconnect layer, a phase-change memory element formed over the first electrode, a second electrode formed over the phase-change memory element, and an oxygen-free spacer layer formed over sidewalls of the phase-change memory element. The phase-change memory element may include a germanium-antimony-tellurium alloy or an aluminum-antimony alloy. The phase-change memory device may include a carbon layer, configured as a heater element, formed between the first electrode and the phase-change memory element. The oxygen-free spacer layer may include SiN, SiC, or SiCN and may further include chlorine, fluorine, argon, chlorine and argon, fluorine and argon, or a mixture of chlorine, fluorine, and argon. The oxygen-free spacer layer may further include a composition that varies with position within the oxygen-free spacer layer.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are provided in which spacers are utilized in order to help protect bottom electrode vias. In embodiments, an opening is formed through dielectric layers, and spacers are formed along sidewalls of the dielectric layers. A bottom electrode via is formed adjacent to the spacers, a bottom electrode is formed, a magnetic tunnel junction (MTJ) structure is formed over the bottom electrode, and a top electrode is formed over the MTJ structure. The structure is patterned, and the spacers help to protect the bottom electrode via from undesired damage during the patterning process.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are provided in which spacers are utilized in order to help protect bottom electrode vias. In embodiments, an opening is formed through dielectric layers, and spacers are formed along sidewalls of the dielectric layers. A bottom electrode via is formed adjacent to the spacers, a bottom, electrode is formed, a magnetic tunnel junction (MTJ) structure is formed over the bottom electrode, and a top electrode is formed over the MTJ structure. The structure is patterned, and the spacers help to protect the bottom electrode via from undesired damage during the patterning process.

Abstract: A heat dissipation structure is provided. The heat dissipation structure includes a heat dissipation unit and a fixation unit. The fixation unit has a bottom and a wall that jointly define a hollow area. The fixation unit is surroundingly arranged on a periphery of a heating source. The hollow area has a first non-masking area, a second non-masking area, and a masking area. The masking area corresponds to at least one part of the heat dissipation unit, and the first non-masking area and the second non-masking area are respectively arranged on opposite sides of the masking area. The first non-masking area has a first volume, the second non-masking area has a second volume, and a sum of the first volume and the second volume is at least greater than a predetermined volume change of the heat dissipation unit.

Abstract: The present invention discloses a method for pairing and interconnecting electronic devices, which cooperates with at least two electronic devices that are grouped as a transmitting end and a receiving end respectively, and the transmitting end operates in a first mode. The method for pairing and interconnecting electronic devices comprises at least Step 1 to Step 4. Step 1 refers to searching any available transmitting end in a wireless manner by the receiving end, and displaying a connection name of the transmitting end on the receiving end. Step 2 refers to prompting a dynamic operating instruction by the receiving end. Step 3 refers to executing operation by the transmitting end based on the dynamic operating instruction and thereby issuing an action instruction. Step 4 refers to receiving the action instruction by the receiving end, and establishing a connection with the transmitting end which issues the action instruction.

Abstract: The present invention provides a linear drive energy recovery system, comprising a power source module, a primary working load module, and a secondary working load module, wherein the power source module is connected to the primary working load module, and the secondary working load module is connected in series to the primary working load module such that a voltage provided by the power source module minus a voltage drop caused by the primary working load module is supplied to the secondary working load module as an operating voltage of the secondary working load module.

Abstract: A memory cell with a hard mask and a sidewall spacer of different material is provided. The memory cell may be manufactured by a method comprising forming a multi-layer stack and patterning the same to form the hard mask layer, the top electrode layer and the switching dielectric layer to form a hard mask, a top electrode and a switching dielectric. A sidewall spacer is formed alongside the hard mask, the top electrode, and the switching dielectric with a material different than the hard mask. The bottom electrode layer is patterned according to the sidewall spacer to form a bottom electrode. A dielectric layer is formed surrounding the bottom electrode, the sidewall spacer and overlying the hard mask. An etch is performed followed by a conductive material filling to form a top electrode via extending through the dielectric layer and the hard mask to reach on the top electrode.

Abstract: A paper separation structure arranged in an office machine, comprising: a separating roller set having a separating roller and a shaft, and a pick roller arranged to correspond to the separating roller set and contacted with the separating roller set, wherein the separating roller has a roller frame, a shaft hole is formed in the roller frame for accommodating the shaft, and a rubber layer connected with the pick roller, the shaft hole has a narrow inner diameter at a middle of the shaft hole and a wide inner diameter at opposite ends of the shaft hole to form two swing spaces between the middle of the shaft hole and opposite ends of the shaft hole, the roller frame and the rubber layer are swung about a joint between the middle of the shaft hole and the shaft.

Abstract: The present invention provides a self-adaptive dimming driving system, configured to work with a light-emitting diode (LED) power port, the self-adaptive dimming driving system comprising: a driving circuit, a forward bias voltage detection circuit, and a controller. The driving circuit is connected to the LED power port. The forward bias voltage detection circuit is connected between the LED power port and the driving circuit, Wherein the forward bias voltage detection circuit comprises a test current output module and a voltage feedback module, the test current output module is configured to output a test current to the LED power port, and the voltage feedback module is configured to output a detection signal according to a voltage parameter of the LED power port. The controller receives the detection signal, obtains a barrier potential parameter of an LED lamp according to the detection signal, and switches a power output mode of the driving circuit according to the barrier potential parameter.

Abstract: A memory cell with a hard mask and a sidewall spacer of different material is provided. The memory cell comprises a bottom electrode disposed over a substrate. A switching dielectric is disposed over the bottom electrode and having a variable resistance. A top electrode is disposed over the switching dielectric. A hard mask disposed over the top electrode. A sidewall spacer extends upwardly along sidewalls of the switching dielectric, the top electrode, and the hard mask. The hard mask and the sidewall spacer have different etch selectivity. A method for manufacturing the memory cell is also provided.

Abstract: Semiconductor devices and methods of manufacturing the semiconductor devices are provided in which spacers are utilized in order to help protect bottom electrode vias. In embodiments, an opening is formed through dielectric layers, and spacers are formed along sidewalls of the dielectric layers. A bottom electrode via is formed adjacent to the spacers, a bottom electrode, a magnetic tunnel junction (MTJ) structure is formed over the bottom electrode, and a top electrode is formed over the MTJ structure. The structure is patterned, and the spaces help to protect the bottom electrode via from undesired damage during the patterning process.

Abstract: A method for moving a stage relative to a base includes coupling a magnet assembly to the stage; coupling an array of coils to the base; and directing current to at least one of the coils with a control system that includes a processor to generate a force that levitates the stage relative to the base and moves the stage relative to the base. In one embodiment, the control system generates at least one current command that levitates and moves the stage while inhibiting the excitation of a first targeted flexible mode.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a memory cell stack over a substrate. The memory cell stack includes a top electrode. A sidewall spacer structure is formed around the memory cell stack. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. A dielectric structure is formed over the sidewall spacer structure. A first etch process is performed on the dielectric structure and the second sidewall spacer layer to define an opening above the top electrode. The second sidewall spacer layer and the dielectric structure are etched at a higher rate than the protective sidewall spacer layer during the first etch process. A top electrode via is formed within the opening.