Abstract: Provides a method for adjusting a thermal field of silicon carbide single crystal growth, and steps comprise: (A) screening a silicon carbide source, and filling into a bottom of a graphite crucible; (B) placing a guide inside the graphite crucible; (C) placing a rigid heat conductive material on the guide, so that a gap between the guide and a crucible wall of the graphite crucible is reduced; (D) fixing a seed crystal on a top of the graphite crucible; (E) placing the graphite crucible equipped with the silicon carbide source and the seed crystal in an induction high-temperature furnace used by physical vapor transport method; (F) performing a silicon carbide crystal growth process; and (G) obtaining a silicon carbide single crystal.

Abstract: Provided is a method of enhancing silicon carbide monocrystalline growth yield, including the steps of: (A) filling a bottom of a graphite crucible with a silicon carbide raw material selected; (B) performing configuration modification on a graphite seed crystal platform; (C) fastening a silicon carbide seed crystal to the modified graphite seed crystal platform with a graphite clamping accessory; (D) placing the graphite crucible containing the silicon carbide raw material and the silicon carbide seed crystal in an inductive high-temperature furnace; (E) performing silicon carbide crystal growth process by physical vapor transport; and (F) obtaining silicon carbide monocrystalline crystals. The geometric configuration of the surface of the graphite seed crystal platform is modified to eradicate development of peripheral grain boundary.

Abstract: A method of growing on-axis silicon carbide single crystal includes the steps of (A) sieving a silicon carbide source material by size, and only the part that has a size larger than 1 cm is adopted for use as a sieved silicon carbide source material; (B) filling the sieved silicon carbide source material in the bottom of a graphite crucible; (C) positioning an on-axis silicon carbide on a top of the graphite crucible to serve as a seed crystal; (D) placing the graphite crucible having the sieved silicon carbide source material and the seed crystal received therein in an induction furnace for the physical vapor transport process; (E) starting a silicon carbide crystal growth process; and (F) obtaining a silicon carbide single crystal.

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

Abstract: A device for growing a carbide of specific shape includes (A) a crucible; (B) a raw material source zone where a SiC raw material precursor is accessible; (C) a deposition zone where SiC is grown; (D) a gas temperature gradient control zone characterized by a temperature gradient; (E) a current deposition carrier disposed within the deposition zone and characterized by at least one repetition of a succession of one or at least two specific shapes of the current deposition carrier; and (F) a heating component for heating the SiC raw material precursor to turn it into gas molecules, so as to effectuate its deposition on the current deposition carrier.

Abstract: A method of producing a carbide raw material includes the steps of (A) providing a porous carbon material and a high-purity silicon raw material or a metal raw material and applying the porous carbon material and the high-purity silicon raw material or a metal raw material alternately to form a layer structure; (B) putting the layer structure in a synthesis furnace to undergo a gas evacuation process; and (C) producing a carbide raw material with a synthesis reaction which the layer structure undergoes in an inert gas atmosphere, wherein the carbide raw material is a carbide powder of a particle diameter of less than 300 ?m, thereby preventing secondary raw material contamination otherwise arising from comminution, oxidation and acid rinsing.

Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

Abstract: A fabricating method for growing a single crystal of a multi-type compound comprises steps of: (a) providing a seed crystal at a deposition region; (b) providing a powder material at a high purity source region; and (c) undertaking a vacuum process, a heating process, a growing process, a cooling process to prepare the singe crystal, wherein a heating source is used to move to control a temperature gradient within a gas temperature control region to form a temperature gradient motion so that the temperature gradient presents a variation. By reducing the possibility of other deficiencies being continuously induced in the following crystal growth process owing to the local slime occurring at the rear side of the seed crystal from the void deficiencies at the rear side of the original seed crystal may be excluded, but also the possibility of other multi-type bodies being induced by the above vacancies.

Abstract: A method of producing a high-purity carbide mold includes the steps of (A) providing a template; (B) putting the template at a deposition region in a growth chamber; (C) putting a carbide raw material in the growth chamber; (D) providing a heating field; (E) introducing a gas; (F) depositing the carbide raw material; and (G) removing the template. The method is able to produce a mold from a high-purity carbide with a purity of 93% or above and therefore is effective in solving known problems with carbide molds, that is, low hardness and low purity.

Abstract: A deposing apparatus includes a crucible having a deposition area formed inside the crucible; a heat sink partially embedded in the crucible and capable of transferring heat from the deposition area; a heat-insulator fixedly surrounding without covering the deposing area; and a thermal reflector securely mounted on a free surface of the heat-insulator without covering the deposition area and having a reflecting face with a slope extending from a side wall of the crucible to the deposition area. The heat-insulator has a relatively low thermal conductivity relative to those of the crucible, the heat sink and the thermal reflector. The thermal reflector reflects thermal radiation in the chamber and communicates with the heat-insulator and the chamber via the pores in the thermal reflector.

Abstract: The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

Abstract: The present invention relates to a gas supply device for use in a crystal-growing furnace. The gas supply device has an insulation layer enclosing a crucible, a gas inlet mounted in the insulation layer, and a gas exit formed in the insulation layer. A gas flow guide shield with an adjustable angle is disposed at the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

Abstract: The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

Abstract: The present invention relates to a hot zone device for use in a crystal-growing furnace. The hot zone device has a gas inlet. The gas inlet is mounted in an insulation layer at a position above the crucible in a manner protruding into an interior of the crucible. The insulation layer is formed with a gas exit. The gas inlet is positioned such that the opening thereof is spaced apart from the free surface of the melt contained in the crucible by a distance substantially equal to or shorter than 10 cm, so as to allow the free surface of the melt to be blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.