Abstract: A head-mounted device includes a host, a first cradle, a second cradle, a speaker, and a shape memory alloy element. The first cradle and the second cradle are connected to two opposite sides of the host. The speaker is movably disposed on the first cradle. The shape memory alloy element is connected between the speaker and the first cradle and is configured to move the speaker after being powered on and heated and shrinking.

Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Abstract: An adapter for a charging cradle includes: a perimeter wall defining a channel between first and second ends; a first device interface on an inner surface of the perimeter wall in communication with the first end, the first device interface configured to receive and align a first mobile device configuration with the charging cradle; a second device interface on the inner surface of the perimeter wall in communication with the second end, the second device interface configured to receive and align a second mobile device configuration with the charging cradle; a cradle interface on an outer surface of the perimeter wall, and configured to couple the adapter to the charging cradle in one of (i) a first orientation to expose a connector of the charging cradle via the first end of the channel, and (ii) a second orientation to expose the connector via the second end of the channel.

Abstract: A mouse device includes a lateral pressure sensing unit and a base unit having a base seat, a housing, and an inner space cooperatively defined by the base seat and the housing. The base seat is elongated in a front-rear direction, and includes a bottom face portion and an extension face portion surrounding and extending upwardly from the bottom face portion, and having spaced apart first and second lateral sections. The housing surrounds the base seat, extends upwardly from the extension face portion, and includes an operating portion extending upwardly from the first lateral section and having front, rear, upper, and lower pressing regions. The lateral pressure sensing unit is located in the inner space, is adjacent to the front, rear, upper and lower pressing regions, and is triggered upon operation on the operating portion.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.

Abstract: A capacitive biosensor is provided. The capacitive biosensor includes: a transistor, an interconnect structure on the transistor, and a passivation layer on the interconnect structure. The interconnect structure includes a first metal structure on the transistor, a second metal structure on the first metal structure, and a third metal structure on the second metal structure. The third metal structure includes a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The passivation has an opening exposing a portion of the third metal structure. The capacitive biosensor further includes a sensing region on the interconnect structure. The sensing region includes a first sensing electrode and a second sensing electrode. The first sensing electrode is formed of the third conductive layer, and the second sensing electrode is disposed on the passivation layer.

Abstract: A planar transformer is configured on a multi-layer circuit board of a resonant converter. The planar transformer includes multiple layers of primary-side traces, multiple layers of secondary-side traces, and an iron core. The primary-side traces serve as a primary-side coil of the transformer to generate a first direction magnetic flux when the resonant converter operates. The secondary-side traces serve as a secondary-side coil of the transformer to generate a second direction magnetic flux when the resonant converter operates. The primary-side traces and the secondary-side traces surround a first core pillar and the second core pillar, and the primary-side traces and the secondary-side traces are configured in a specific stacked structure on the multi-layer circuit board, so that a magnetomotive force of the planar transformer can maintain balance during the operation of the resonant converter.

Abstract: A planar magnetic component is arranged on a circuit board of a resonant converter, and the resonant converter includes a primary-side circuit and a secondary-side circuit. The planar magnetic component includes an inductor trace, a primary-side trace, a secondary-side trace, and an iron core assembly. The iron core assembly includes an inductor iron core and an iron core. The primary-side trace surrounds the first through hole in a first direction and surrounds the second through hole in a second direction to form an ?-shaped trace. The inductor trace is formed on the primary-side layer board and coupled to the primary-side trace, and two ends of the inductor trace form an input terminal and an output terminal of the planar magnetic component.

Abstract: The present disclosure provides a semiconductor structure with having a source/drain feature with a central cavity, and a source/drain contact feature formed in central cavity of the source/drain region, wherein the source/drain contact feature is nearly wrapped around by the source/drain region. The source/drain contact feature may extend to a lower most of a plurality semiconductor layers.

Abstract: A power supply unit supplies power to a load, and the power supply unit includes a power factor corrector, a DC conversion module, and an isolated conversion module. The power factor corrector is plugged into a first main circuit board and converts an AC power into a DC power. The DC conversion module is plugged into the first main circuit board and converts the DC power into a main power. The isolated conversion module includes a bus capacitor, the bus capacitor is coupled to the DC conversion module through a first power copper bar, and coupled to the power factor corrector through a second power copper bar. The first power copper bar and the second power copper bar are arranged on a side opposite to the first main circuit board, and are arranged in parallel with the first main circuit board.

Abstract: A planar magnetic component is arranged on a circuit board of a resonant converter, and the resonant converter includes a primary-side circuit and a secondary-side circuit. The planar magnetic component includes an inductor trace, an inductor iron core, and a current transformer trace. The inductor trace is arranged on the primary-side circuit and formed one layer board of the circuit board to serve as a resonant inductor coupled to the primary-side circuit. The inductor iron core includes a core pillar, and the core pillar penetrates a through hole of the circuit board, and the inductor trace surrounds the through hole. The current transformer trace is formed on the circuit board to serve as a current transformer coil coupled to the resonant inductor. The current transformer trace surrounds the through hole to form a common-core structure that shares the inductor iron core.

Abstract: A wearable device includes a body, a nose pad frame, a first elastic element and a fixing element. The body has a bridge. The nose pad frame is movably arranged at the bridge. The first elastic element is arranged between the bridge and the nose pad frame. The fixing element is movably arranged at the bridge for fixing the nose pad frame or allowing the nose pad frame to move steplessly.

Abstract: A semiconductor device includes a substrate, a plurality of nanosheets, a plurality of source/drain (S/D) features, and a gate stack. The substrate includes a first fin and a second fin. The first fin has a first width less than a second width of the second fin. The plurality of nanosheets is disposed on the first fin and the second fin. The plurality of source/drain (S/D) features are located on the first fin and the second fin and abutting the plurality of nanosheets. A bottom surface of the plurality of source/drain (S/D) features on the first fin is equal to or lower than a bottom surface of the plurality of source/drain (S/D) features on the second fin. The gate stack wraps each of the plurality of nanosheets.

Abstract: A display device and a bezel thereof are provided. The display device includes a display panel and a bezel. The display panel has a first surface and a second surface. The first surface includes at least one pixel pad section, and the second surface includes at least one circuit pad section. The bezel includes a first surface connecting portion, a second surface connecting portion and at least one conductive wire. The edge of the display panel having the pixel pad section and the circuit pad section is accommodated between the first surface connecting portion and the second surface connecting portion. Each conductive wire has a first end and a second end. The first end is disposed on the first surface connecting portion and the second end is disposed on the second surface connecting portion. The part of the first connecting portion having the first end corresponds to the pixel pad section, and the part of the second connecting portion having the second end corresponds to the circuit pad section.

Abstract: A phase-locked loop circuit includes a phase frequency detector (PFD) circuit, a digital code generator circuit, a frequency divider and an oscillator circuit. The PFD circuit is configured to detect a difference in phase and frequency between a reference clock and a feedback clock to generate a first control signal and a second control signal. The digital code generator circuit is configured to process the second control signal to generate a digital code. The frequency divider is configured to receive an output clock to generate the feedback clock. The oscillator circuit is configured to generate the output clock according to the first control signal and the digital code. A frequency of the output clock is determined according to a first control parameter and a second control parameter of different types. The first and second control parameters are adjusted in response to the first control signal and the digital code respectively.

Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.

Abstract: A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: A computing device includes: a storage circuit, for storing an arbitration interframe space (AIFS) time, at least one expected value of at least one backoff time, a preamble time, a short interframe space (SIFS) time and an acknowledgement (ACK) time; a first computing circuit, for computing a payload time according to a packet length and a packet rate; a second computing circuit, coupled to the storage circuit and the first computing circuit, for computing at least one packet transmission time according to the AIFS time, the at least one expected value of the at least one backoff time, the preamble time, the SIFS time, the ACK time and the payload time; and a third computing circuit, coupled to the second computing circuit, for computing a total packet transmission time according to the at least one packet transmission time and an estimated packet error rate.