Patents by Inventor Hsun Wang

Hsun Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240194520
    Abstract: A method and structure for forming a via-first metal gate contact includes depositing a first dielectric layer over a substrate having a gate structure with a metal gate layer. An opening is formed within the first dielectric layer to expose a portion of the substrate, and a first metal layer is deposited within the opening. A second dielectric layer is deposited over the first dielectric layer and over the first metal layer. The first and second dielectric layers are etched to form a gate via opening. The gate via opening exposes the metal gate layer. A portion of the second dielectric layer is removed to form a contact opening that exposes the first metal layer. The gate via and contact openings merge to form a composite opening. A second metal layer is deposited within the composite opening, thus connecting the metal gate layer to the first metal layer.
    Type: Application
    Filed: February 19, 2024
    Publication date: June 13, 2024
    Inventors: Chao-Hsun WANG, Wang-Jung HSUEH, Kuo-Yi CHAO, Mei-Yun WANG
  • Patent number: 12001132
    Abstract: Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pei-Cheng Hsu, Ta-Cheng Lien, Ping-Hsun Lin, Shih-Che Wang, Hsin-Chang Lee
  • Patent number: 12000455
    Abstract: A method that includes measuring vibration levels in a semiconductor manufacturing apparatus, determining one or more sections of the semiconductor manufacturing apparatus that vibrate at levels greater than a predetermined vibration level, and reducing the vibration levels in the one or more sections to be at or within the predetermined vibration level by coupling one or more weights to an external surface of the semiconductor manufacturing apparatus in the one or more sections.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi Chen Ho, Chih Ping Liao, Chien Ting Lin, Jie-Ying Yang, Wei-Ming Wang, Ker-Hsun Liao, Chi-Hsun Lin
  • Publication number: 20240174367
    Abstract: The present application provides a system for unmanned aerial vehicle (UAV) parachute landing. An exemplary system includes a detector configured to detect at least one of a flight speed, a wind speed, a wind direction, a position, a height, and a voltage of a UAV. The system also includes a memory storing instructions and a processor configured to execute the instructions to cause the system to: determine whether to open a parachute of the UAV in accordance with a criterion, responsive to the determination to open the parachute of the UAV, stop a motor of the UAV that spins a propeller of the UAV, and open the parachute of the UAV after stopping the motor of the UAV for a first period.
    Type: Application
    Filed: December 22, 2023
    Publication date: May 30, 2024
    Applicant: GEOSAT Aerospace & Technology
    Inventors: Lung-Shun SHIH, Fu-Kai YANG, Yi-Feng CHENG, Di-Yang WANG, Chien-Hsun LIAO
  • Patent number: 11996483
    Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Hsun Wang, Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang, Chun-Hsiung Lin, Chih-Hao Wang
  • Publication number: 20240170385
    Abstract: A semiconductor package device is provided. The semiconductor package device includes a chip and a redistribution layer disposed on the chip and electrically connected to the chip. The redistribution layer includes a plurality of first metal lines and a plurality of second metal lines, wherein at least one of the second metal lines is disposed between two adjacent first metal lines. The included angle between the at least one of the second metal lines and the two adjacent first metal lines is greater than or equal to 0 degrees and less than or equal to 10 degrees. The first width of one of the two adjacent first metal lines is greater than the second width of the at least one of the second metal lines.
    Type: Application
    Filed: December 22, 2022
    Publication date: May 23, 2024
    Inventors: Te-Hsun LIN, Wen-Hsiang LIAO, Mei-Yen CHEN, Ming-Hsien SHIH, Yung-Feng CHEN, Cheng-Chi WANG
  • Publication number: 20240170211
    Abstract: A metal electrode of a ceramic capacitor and a method of forming the same are provided. The method includes mixing metal powders and a barium titanate organic-precursor to obtain precursor powders; adding an adhesive to the precursor powders to obtain a metal slurry; performing a molding process to the metal slurry to obtain a film material; performing a binder burn-out process to the film material to obtain a degumming film; and performing a sintering process to the degumming film to obtain the metal electrode. By mixing specific amount of barium titanate organic-precursor with the metal powders, the barium titanate metallic organic-precursor can be transformed to barium titanate in the following process, and barium titanate can be dispersed between the metals homogeneously. Therefore, electrode continuity can be increased.
    Type: Application
    Filed: February 24, 2023
    Publication date: May 23, 2024
    Inventors: Hsing-I HSIANG, Fu-Su YEN, Chi-Yuen HUANG, Chun-Te LEE, Kai-Hsun YANG, Shih-Ming WANG
  • Publication number: 20240162159
    Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.
    Type: Application
    Filed: January 25, 2024
    Publication date: May 16, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang WANG, Wei-Ting Chen, Chien-Hsun Chen, Shih-Ya Huang
  • Publication number: 20240162833
    Abstract: A power supply unit supplies power to a load, and the power supply unit includes a power factor corrector, a DC conversion module, and an isolated conversion module. The power factor corrector is plugged into a first main circuit board and converts an AC power into a DC power. The DC conversion module is plugged into the first main circuit board and converts the DC power into a main power. The isolated conversion module includes a bus capacitor, the bus capacitor is coupled to the DC conversion module through a first power copper bar, and coupled to the power factor corrector through a second power copper bar. The first power copper bar and the second power copper bar are arranged on a side opposite to the first main circuit board, and are arranged in parallel with the first main circuit board.
    Type: Application
    Filed: November 13, 2023
    Publication date: May 16, 2024
    Inventors: Yi-Sheng CHANG, Cheng-Chan HSU, Chia-Wei CHU, Chun-Yu YANG, Deng-Cyun HUANG, Yi-Hsun CHIU, Chien-An LAI, Yu-Tai WANG, Chi-Shou HO, Zhi-Yuan WU, Ko-Wen LU
  • Publication number: 20240159540
    Abstract: A camera is configured to obtain camera data which includes a body image of a body portion of a user. An IMU sensor is configured to obtain sensor data and adapted to be mounted on the body portion. A processor is configured to determine the body portion being static or dynamic based on the camera data or the sensor data. In response to the body portion being static, the processor is configured to determine a pose confidence of a current pose of the body portion based on the camera data and calibrate an accumulative error of the sensor data based on the pose confidence and the camera data. In response to the body portion being dynamic, the processor is configured to calibrate the accumulative error based on a first moving track and a second moving track. The processor is configured to track the body portion based on the sensor data.
    Type: Application
    Filed: November 15, 2023
    Publication date: May 16, 2024
    Applicant: HTC Corporation
    Inventors: Jia-Yau Shiau, Kuan-Hsun Wang, Jun Rei Wu
  • Patent number: 11984361
    Abstract: A semiconductor device includes a substrate, a plurality of nanosheets, a plurality of source/drain (S/D) features, and a gate stack. The substrate includes a first fin and a second fin. The first fin has a first width less than a second width of the second fin. The plurality of nanosheets is disposed on the first fin and the second fin. The plurality of source/drain (S/D) features are located on the first fin and the second fin and abutting the plurality of nanosheets. A bottom surface of the plurality of source/drain (S/D) features on the first fin is equal to or lower than a bottom surface of the plurality of source/drain (S/D) features on the second fin. The gate stack wraps each of the plurality of nanosheets.
    Type: Grant
    Filed: February 10, 2023
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Lo-Heng Chang, Chih-Hao Wang, Kuo-Cheng Chiang, Jung-Hung Chang, Pei-Hsun Wang
  • Publication number: 20240151875
    Abstract: An optical device is provided. The optical device includes a substrate that has a top surface and a bottom surface. The optical device also includes a cover layer disposed on the substrate, and the cover layer has a top surface and a bottom surface. The top surface of the cover layer faces the bottom surface of the substrate. The optical device further includes a first meta structure disposed on the bottom surface of the substrate and a second meta structure disposed on the top surface of the cover layer. Moreover, the optical device includes a detector disposed on the bottom surface of the cover layer.
    Type: Application
    Filed: November 7, 2022
    Publication date: May 9, 2024
    Inventors: Wei-Hsun CHENG, Chen-Yi YU, Wei-Ko WANG, Po-Han FU
  • Patent number: 11978664
    Abstract: A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pang-Sheng Chang, Chao-Hsun Wang, Kuo-Yi Chao, Fu-Kai Yang, Mei-Yun Wang, Li-Chieh Wu, Chun-Wei Hsu
  • Publication number: 20240145370
    Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.
    Type: Application
    Filed: December 18, 2022
    Publication date: May 2, 2024
    Applicant: InnoLux Corporation
    Inventors: Te-Hsun LIN, Wen-Hsiang LIAO, Ming-Hsien SHIH, Yung-Feng CHEN, Cheng-Chi WANG
  • Patent number: 11973005
    Abstract: A method includes bonding a first package and a second package over a package component, adhering a first Thermal Interface Material (TIM) and a second TIM over the first package and the second package, respectively, dispensing an adhesive feature on the package component, and placing a heat sink over and contacting the adhesive feature. The heat sink includes a portion over the first TIM and the second TIM. The adhesive feature is then cured.
    Type: Grant
    Filed: August 3, 2021
    Date of Patent: April 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Hsun Wang, Ping-Yin Hsieh, Pu Wang, Li-Hui Cheng, Szu-Wei Lu
  • Publication number: 20240133745
    Abstract: A temperature sensing device includes a substrate, a first reflective module, a first window cover, and a dual thermopile sensor. The first reflective module is disposed on the substrate, including a first mirror chamber with a narrow field of view (FOV), and the first reflective module focuses a thermal radiation from measured object to a first image plane in the first mirror chamber. The first window cover is disposed on the first reflective module, and the first window cover allows a selected band of the thermal radiation to pass through. The dual thermopile sensor is disposed on the substrate and located in the first mirror chamber, and the dual thermopile sensor senses a temperature data from the first image plane. Additional second reflective module, LED source plus pin hole with same FOV of dual thermopile sensor can illuminate the measured object for ease of placement of object to be heated.
    Type: Application
    Filed: October 19, 2022
    Publication date: April 25, 2024
    Inventors: Chein-Hsun WANG, Ming LE, Tung-Yang LEE, Yu-Chih LIANG, Wen-Chie HUANG, Chen-Tang HUANG, Jenping KU
  • Publication number: 20240136472
    Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.
    Type: Application
    Filed: December 29, 2023
    Publication date: April 25, 2024
    Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Tsung-Hsun CHIANG, Bo-Jiun HU, Wen-Hung CHUANG, Yu-Ling LIN
  • Publication number: 20240128232
    Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.
    Type: Application
    Filed: December 28, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Ding Wang, Yen-Fu Su, Hao-Cheng Hou, Jung-Wei Cheng, Chien-Hsun Lee, Hsin-Yu Pan
  • Publication number: 20240126027
    Abstract: An optical device is provided. The optical device includes a substrate, a waveguide layer, a first input grating, a first fold grating, and an isolation layer. The waveguide layer is disposed on the substrate. The first input grating is disposed in the waveguide layer. A first incident light passes through the first input grating to form a first light. The first fold grating is disposed in the waveguide layer. The first light passes through the first fold grating to form a first diffracted light in a first direction and a second diffracted light in a second direction. The isolation layer includes a first well array and is disposed on the waveguide layer. When the first diffracted light in the first direction travels to a first top portion corresponding to the first well array of the waveguide layer, the first diffracted light further passes through the first well array.
    Type: Application
    Filed: October 18, 2022
    Publication date: April 18, 2024
    Inventors: Wei-Hsun CHENG, Wei-Ko WANG, Hsin-Yi HSIEH
  • Publication number: 20240130038
    Abstract: A transmission device for suppressing the glass-fiber effect includes a circuit board and a transmission line. The circuit board includes a plurality of glass fibers, so as to define a fiber pitch. The transmission line is disposed on the circuit board. The transmission line includes a plurality of non-parallel segments. Each of the non-parallel segments of the transmission line has an offset distance with respect to a reference line. The offset distance is longer than or equal to a half of the fiber pitch.
    Type: Application
    Filed: November 23, 2022
    Publication date: April 18, 2024
    Applicants: UNIMICRON TECHNOLOGY CORP., National Taiwan University
    Inventors: Chin-Hsun WANG, Ruey-Beei Wu, Ching-Sheng Chen, Chun-Jui Hung, Wei-Yu Liao, Chi-Min Chang