Abstract: A method for impact test on a lower abdomen of a vehicle crash test dummy includes: controlling an arc-shaped hammer head to impact a lower abdomen of a preset dummy at a preset speed; obtaining displacements from a displacement sensor, wherein the displacements are generated by the lower abdomen of the preset dummy and the arc-shaped hammer head during the impact; obtaining a pressure from a pressure sensor, wherein the pressure is borne by the lower abdomen of the preset dummy during the impact; and determining, based on the displacements and the pressure, whether the preset dummy satisfies a biological simulation standard. The method is capable of testing whether the current dummy satisfies the biological simulation standard, so as to ensure the accuracy of test data in subsequent vehicle crash tests using the dummy.

Abstract: This application provides a UCI sending and receiving method and a communications apparatus. In the method, an association relationship between a PUCCH and a PUSCH is established, so that when resources of the PUSCH and the PUCCH overlap, a terminal device can determine UCI on which PUCCHs can be transmitted by multiplexing the resource of the PUSCH. A network device may receive the UCI on the PUSCH. Because the network device may know in advance which PUCCHs and PUSCHs are sent to the network device, the network device can demodulate and decode a signal on the received PUSCHs, to successfully obtain UCI. The network device can make a proper decision based on the UCI.

Abstract: This application discloses a data writing method, device, a storage server and a computer readable storage medium, including: writing, when a write request is received, write data corresponding to the write request to a write buffer; acquiring historical access data of a data block corresponding to to-be-flushed data in the write buffer when a data flushing operation is triggered for the write buffer; determining whether the to-be-flushed data is write-only data based on the historical access data by using a pre-trained classifier; if yes, writing the to-be-flushed data to a hard disk drive; and if no, writing the to-be-flushed data to a cache. The data writing method provided by this application can effectively reduce the traffic of writing dirty data to the cache while reserving more space in the cache for the ordinary data, thereby improving the utilization of the cache space and the read hit rate of the cache.

Abstract: A well cementing method is described for improving cementing quality by controlling the hydration heat of cement slurry. By controlling the degree and/or rate of hydration heat release from cement slurry, the method improves the hydration heat release during formation of cement with curing of cement slurry, improves the binding quality between the cement and the interfaces, and in turn improves the cementing quality at the open hole section and/or the overlap section. The cementing method improves cementing quality of oil and gas wells and reduces the risk of annular pressure.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a gate strip, a source doped region and a body doped region. The substrate has an active region. The gate strip is disposed on the substrate within the active region. The gate strip extends along a first direction. The source doped region is located in the active region and adjacent to a first side of the gate strip along the first direction. The body doped region is located in the active region and adjacent to the first side of the gate strip. The body doped region and the source doped region have opposite conductivity types. The body doped region has a first length along a second direction that is different from the first direction, wherein the first length gradually changes along the first direction.

Abstract: A processing system includes: a first service machine having a first service module; and a first service switch; wherein the first service machine and the first service switch are configured for logically coupling between virtual machines and a virtual switch; wherein the first service machine comprises a first communication interface and a second communication interface, the second communication interface configured for communication with the first service switch.

Abstract: A processing system includes: a first service machine having a first service module; and a first service switch; wherein the first service machine and the first service switch are configured for logically coupling between virtual machines and a virtual switch; wherein the first service machine comprises a first communication interface and a second communication interface, the second communication interface configured for communication with the first service switch.

Abstract: A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.

Abstract: A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.

Abstract: A processing system includes: a first service machine having a first service module; and a first service switch; wherein the first service machine and the first service switch are configured for logically coupling between virtual machines and a virtual switch; wherein the first service machine comprises a first communication interface and a second communication interface, the second communication interface configured for communication with the first service switch.

Abstract: A high-temperature superconducting film includes a SrTiO3 substrate, a single crystalline FeSe layer, and a protective layer with a layered crystal structure. The single crystalline FeSe layer is sandwiched between the SrTiO3 substrate and the protective layer via a layer-by-layer mode. An onset temperature of superconducting transition of the high-temperature superconducting film is greater than or equal to 54 K, and a critical current density of the high-temperature superconducting film is about 106 A/cm2 at 12 K.

Abstract: A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.

Abstract: A high-temperature superconducting film includes a SrTiO3 substrate, a single crystalline FeSe layer, and a protective layer with a layered crystal structure. The single crystalline FeSe layer is sandwiched between the SrTiO3 substrate and the protective layer via a layer-by-layer mode. An onset temperature of superconducting transition of the high-temperature superconducting film is greater than or equal to 54 K, and a critical current density of the high-temperature superconducting film is about 106 A/cm2 at 12 K.

Abstract: A method for making a high-temperature superconducting film includes loading a SrTiO3 substrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiO3 substrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.

Abstract: A method for operating an electronic publishing system to display one or more advertisements, comprising the steps of: receiving user content to be displayed on the electronic publishing system; determining the one or more advertisements as a function of the user content and the user's behavior on the electronic publishing system; displaying the user content on the electronic publishing system in a specific format conducive for display of such user content; and displaying the determined advertisements on the electronic publishing system using the specific format to resemble the user content.

Abstract: The invention provides compounds of formula I: wherein a, b, c, m, n, q, r, W, Z1, Ar1, Z2, Y, R1, R2, and R3 are as defined in the specification. The compounds of formula I are muscarinic receptor antagonists. The invention also provides pharmaceutical compositions containing such compounds, processes and intermediates for preparing such compounds and methods of using such compounds to treat pulmonary disorders.

Abstract: A system and method for massively multi-core computing are provided. A method for computer management includes determining if there is a need to allocate at least one first resource to a first plane. If there is a need to allocate at least one first resource, the at least one first resource is selected from a resource pool based on a set of rules and allocated to the first plane. If there is not a need to allocate at least one first resource, it is determined if there is a need to de-allocate at least one second resource from a second plane. If there is a need to de-allocate at least one second resource, the at least one second resource is de-allocated. The first plane includes a control plane and/or a data plane and the second plane includes the control plane and/or the data plane. The resources are unchanged if there is not a need to allocate at least one first resource and if there is not a need to de-allocate at least one second resource.

Abstract: This invention provides compounds of formula I: wherein a, b, c, d, m, n, p, s, t, W, Ar1, R1, R2, R3, R4, R6, R7, and R8 are as defined in the specification. The compounds of formula I are muscarinic receptor antagonists. The invention also provides pharmaceutical compositions containing such compounds, processes and intermediates for preparing such compounds and methods of using such compounds to treat pulmonary disorders.

Abstract: An LED lamp with an air-permeable shell for heat dissipation. The LED lamp comprises a lamp shell having a top end, a shell body and a bottom end. A LED light source module is bounded on the top end of the lamp shell. A screw base is jointed with the bottom end of the lamp shell. An AC/DC power conversion module is located inside the lamp shell. The lamp shell is made of thermal conductive materials and have air-permeable through holes formed on the lamp shell. With the air permeable lamp shell, the natural air convection surrounding the LED light source module is improved and the inside surface of the lamp shell also contributes to the heat dissipation. The contact surface of the lamp shell with the ambient air is significantly increased to enhance the effect of heat dissipation.

Abstract: Disclosed are atomic layer deposition method and a semiconductor device including the atomic layer, including the steps: placing a semiconductor substrate in an atomic layer deposition chamber; feeding a first precursor gas to the semiconductor substrate within the chamber to form a first discrete monolayer on the semiconductor substrate; feeding an inert purge gas to the semiconductor substrate within the chamber to remove the first precursor gas which has not formed the first discrete monolayer on the semiconductor substrate; feeding a second precursor gas to the chamber to react with the first precursor gas which has formed the first discrete monolayer, forming a discrete atomic size islands; and feeding an inert purge gas to the semiconductor substrate within the chamber to remove the second precursor gas which has not reacted with the first precursor gas and byproducts produced by the reaction between the first and the second precursor gases.