Abstract: An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

Abstract: An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

Abstract: A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.

Abstract: A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.

Abstract: A double heterostructure for a light emitting diode comprises a layer of aluminum gallium nitride having a first conductivity type; a layer of aluminum gallium nitride having the opposite conductivity type; and an active layer of gallium nitride between the aluminum gallium nitride layers, in which the gallium nitride layer is co-doped with both a Group II acceptor and a Group IV donor, with one of the dopants being present in an amount sufficient to give the gallium nitride layer a net conductivity type, so that the active layer forms a p-n junction with the adjacent layer of aluminum gallium nitride having the opposite conductivity type.

Abstract: A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.

Abstract: A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.

Abstract: A light emitting diode is disclosed that emits light in the blue portion of the visible spectrum with high external quantum efficiency. The diode comprises a single crystal silicon carbide substrate having a first conductivity type, a first epitaxial layer of silicon carbide on the substrate and having the same conductivity type as the substrate, and a second epitaxial layer of silicon carbide on the first epitaxial layer and having the opposite conductivity type from the first layer. The first and second epitaxial layers forming a p-n junction, and the diode includes ohmic contacts for applying a potential difference across the p-n junction.

Abstract: A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a light emitting p-n junction structure between the n-type substrate and the n-type top layer. The p-n junction structure is formed of respective portions of n-type silicon carbide and p-type silicon carbide. The diode further includes means between the n-type top layer and the n-type substrate for coupling the n-type top layer to the light-emitting p-n junction structure while preventing n-p-n behavior between the n-type top layer, the p-type layer in the junction structure, and the n-type substrate.

Abstract: The invention is a method, and associated apparatus and product, of forming extremely pure epitaxial layers of silicon carbide by reducing the carrier concentration of residual nitrogen in silicon carbide formed by chemical vapor deposition processes. The method comprises placing a substrate upon which an epitaxial layer of silicon carbide will form upon a susceptor, and in which the susceptor is formed of a material that will not generate undesired nitrogen-containing out gases at the temperatures at which chemical vapor deposition of silicon carbide will take place from appropriate source gases. The substrate is heated to a temperature at which chemical vapor deposition of silicon carbide will take place from appropriate source gases by inductively heating the susceptor using an induction frequency that heats the susceptor material. Silicon-containing and carbon-containing source gases are then introduced that will form an epitaxial layer of silicon carbide upon the heated substrate.

Abstract: Device quality monocrystalline Alpha-SiC thin films are epitaxially grown by chemical vapor deposition on Alpha-SiC [0001] substrates prepared off axis.

Abstract: The invention is a method of forming a substantially planar surface on a monocrystalline silicon carbide crystal by exposing the substantially planar surface to an etching plasma until any surface or subsurface damage caused by any mechanical preparation of the surface is substantially removed. The etch is limited, however, to a time period less than that over which the plasma etch will develop new defects in the surface or aggravate existing ones, and while using a plasma gas and electrode system that do not themselves aggravate or cause substantial defects in the surface.

Abstract: Device quality monocrystalline Alpha-SiC thin films are epitaxially grown by chemical vapor deposition on Alpha-SiC [0001] substrates prepared off axis.

Abstract: Device quality thin films of Beta-SiC are epitaxially grown on substrates of Alpha-Sic.