Patents by Inventor Hua Zeng

Hua Zeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Top spin valve sensor that has an iridium manganese (IrMn) pinning layer and an iridium manganese oxide (IrMnO) seed layer
    Patent number: 6437950
    Abstract: A top spin valve sensor includes an iridium manganese (IrMn) pinning layer which has been formed by ion beam sputter deposition. The magnetoresistive coefficient of the spin valve sensor is increased by employing an iridium manganese oxide (IrMnO) seed layer between a free layer of the spin valve sensor and a first read gap layer of the read head. The free layer is preferably a nickel iron free film located between first and second cobalt iron (CoFe) free films.
    Type: Grant
    Filed: October 12, 2000
    Date of Patent: August 20, 2002
    Assignee: International Business Machines Corporation
    Inventors: Phong Chau, Mustafa Pinarbasi, Hua A. Zeng, Patrick Rush Webb
  • Battery charger
    Patent number: D468686
    Type: Grant
    Filed: September 20, 2001
    Date of Patent: January 14, 2003
    Assignee: Motorola, Inc.
    Inventors: Qing-Hua Zeng, Seng Chan, William Phelps, III, Sean Nathan Davie, Frank Tyneski, Wiling Tan, Andreas Haase