Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.

Abstract: A circuit protecting device somprises mainly a housing, an insulation piece, a bimetallic blade, a spring and a press button. The housing has a cover and a main body provided with two partition blocks forming a spring slot and a press button slot communicating with the spring slot. The bimetallic blade has an end fastened to one of two terminals and has another end provided with a contact piece in contact with another one of the two terminals. The spring embracing the outer end of the insulation piece is received in the spring slot of the main body of the housing while the press button is received in the press button slot of the main body of the housing. The inner end of the press button is provided with an insertion hole for receiving therein the outer end of the insulation piece.