Abstract: A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Abstract: A light-emitting diode (LED) apparatus includes an epitaxial layer and an etching mask layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The etching mask layer is disposed on the epitaxial layer and has a plurality of hollows. The second semiconductor layer includes a roughing structure.

Abstract: An optical film includes a substrate and at least one pyramid-like structure. The pyramid-like structure is disposed on one surface of the substrate and has a base, a first face, a second face and a third face. The first, second and third faces are connected together and disposed along the base.

Abstract: A manufacturing method of a magnetic device includes the steps of forming a magnetic substrate having a plurality of recesses, and forming at least one coil in the recess. In addition, a magnetic device is also disclosed. The magnetic device includes a magnetic substrate and at least one coil. The magnetic substrate has a plurality of recesses and the coil is disposed in the recess.

Abstract: A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield.

Abstract: A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

Abstract: A light-emitting diode (LED) apparatus includes an epitaxial layer and a current spreading layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed on the first semiconductor layer of the epitaxial layer and has a micro/nano roughing structure layer and a transparent conductive layer. The micro/nano roughing structure layer has a plurality of hollow parts, and the transparent conductive layer covers a surface of the micro/nano roughing structure layer and is filled within the hollow parts. In addition, a manufacturing method of the LED apparatus and a current spreading layer with a micro/nano structure are also disclosed.

Abstract: A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Abstract: A semiconductor piezoresistive sensor, which is electrically connected with a circuit, includes a semiconductor base, at least one piezoresistive element and a conductive layer. The semiconductor base includes a diaphragm and a base. The base is disposed adjacent to and around the diaphragm. The piezoresistive element is formed in the diaphragm and is electrically connected with the circuit. The conductive layer is electrically connected with the diaphragm.

Abstract: A light emitting diode apparatus includes a heat dissipating substrate, a composite layer, an epitaxial layer, a first electrode and a second electrode. The composite layer includes a reflective layer, a transparent conductive layer and a patterned insulating thermoconductive layer, which is disposed between the reflective layer and the transparent conductive layer. The composite layer is disposed between the heat dissipating substrate and the epitaxial layer and allows currents to concentrate to the reflective layer or the transparent conductive layer and then to be diffused evenly through the transparent conductive layer. The epitaxial layer includes a first semiconductor layer electrically connected with the first electrode, an active layer and a second semiconductor layer electrically connected with the second electrode.

Abstract: A micro-electromechanical device includes a substrate, a first patterned conductive layer, a second patterned conductive layer and a first patterned blocking layer. The first patterned conductive layer is disposed on the substrate. The second patterned conductive layer is disposed on the first patterned conductive layer. The first patterned blocking layer is connected with the first patterned conductive layer and the second patterned conductive layer. In addition, a method of manufacturing the micro-electromechanical device is also disclosed.

Abstract: An accelerometer includes a fixing unit and a movable unit. The fixing unit has a plurality of first electrode parts and a plurality of second electrode parts. The movable unit is connected with the fixing unit and includes a body having an opening, a plurality of third electrode parts and a plurality of fourth electrode parts. The third electrode parts are disposed at an outer side of the body with respect to the first electrode parts, respectively. The fourth electrode parts are disposed at the inner side of the body in the opening, and are disposed respectively with respect to the second electrode parts, respectively.

Abstract: A light-emitting diode (LED) package includes a thermal-conducting substrate, a LED element, a package body, and an optical modulation device. The LED element is formed on the thermal-conducting substrate. The package body is formed on the LED element and the thermal-conducting substrate, and the optical modulation device is disposed on a light outputting surface of the package body and has a plurality of stepped protrusions for adjusting a shape of an optical field of the light beam. The optical modulation device and the package body can be two separate components and be connected together, or the optical modulation device and the package body can be integrally formed as a single piece when they are made. In addition, a manufacturing method of the LED package is also disclosed.

Abstract: A light-emitting diode (LED) device includes a substrate, at least one LED element and an optical modulation structure. The LED element is disposed on the substrate and generates a light beam. The optical modulation structure is disposed at one side of the LED element for adjusting a shape of an optical field of the light beam and an intensity distribution of the optical field. The optical modulation structure is formed with a plurality of stepped protrusions.

Abstract: A capacitance sensing structure includes a substrate, a sensing electrode layer, at least one stack layer and a conductive body. The sensing electrode layer is formed on or in the substrate. The stack layer is formed on the sensing electrode layer. The conductive body is disposed over and corresponding to the sensing electrode layer and the stack layer.

Abstract: An electroluminescent module includes a module substrate, a thermal-conducting carrier substrate and a light-emitting element. The module substrate has an opening, a first surface and a first patterned electrode disposed on the first surface. The thermal-conducting carrier substrate has a carrying element and a second patterned electrode disposed on the carrying element. The carrying element is disposed opposite to the first surface of the module substrate, and the second patterned electrode is disposed facing to the first patterned electrode and electrically connected to the first patterned electrode. The light-emitting element is located at the opening and disposed on the thermal-conducting carrier substrate. The light-emitting element has a first electrode and a second electrode, both of which are respectively electrically connected to the corresponding portions of the second patterned electrode of the thermal-conducting carrier substrate.

Abstract: An electroluminescent device includes a substrate, a reflection layer, a patterned transparent conductive layer, at least one LED element, a first contact electrode and a second contact electrode. The reflection layer is formed on the substrate. The patterned transparent conductive layer is disposed on the reflection layer. The LED element is formed on the patterned transparent conductive layer and includes a first semiconductor layer, an electroluminescent layer and a second semiconductor layer. The second semiconductor layer is disposed on the patterned transparent conductive layer and the reflection layer. The first contact electrode is electrically connected to the first semiconductor layer. The second contact electrode is electrically connected to the second semiconductor layer.

Abstract: An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.

Abstract: An electroluminescent device includes a heat-conductive substrate, a heat-conductive adhering layer, a heat-conductive insulating layer, a reflective layer, a light-emitting diode element, a first contacting electrode and a second contacting electrode. The heat-conductive adhering layer is formed on the heat-conductive substrate. The heat-conductive insulating layer is formed on the heat-conductive adhering layer. The reflective layer is formed on the heat-conductive insulating layer. The light-emitting diode element is formed on the reflective layer, and a part of the reflective layer is exposed from the light-emitting diode element. The first contacting electrode is disposed on the light-emitting diode element. The second contacting electrode is disposed on the exposed reflective layer. A manufacturing method of the electroluminescent device is also disclosed.

Abstract: The invention provides a method for manufacturing bearing assembly. The method comprises: coating a photoresist on an inner wall of a through hole of a bearing; inserting an ultraviolet lamp having a transparent groove pattern thereon into through hole and performing exposure process so as to photosensitize the photoresist corresponding to the groove pattern; removing the ultraviolet lamp and cleaning the photosensitized portion of the photoresist by developer; etching the inner wall not covered with the photoresist by an etchant or forming a deposited layer on the inner wall not covered with the photoresist; removing the photoresist reminding on the inner wall by a stripping agent so as to complete the method for manufacturing a dynamic bearing. The method is also proved to a surface of a shaft to manufacture the dynamic bearing.