Abstract: Present disclosure provides a mask and a method for fabricating a semiconductor device, the mask includes a target pattern having consecutive edges, a first scattering bar and a second scattering bar extending along a primary direction and adjacent to consecutive edges of the target pattern, wherein the first scattering bar and the second scattering bar partially overlaps in the primary direction, and a connecting segment connecting between a first end of the first scattering bar and a first end of the second scattering bar, wherein the first scattering bar is not parallel to the connecting segment.

Abstract: Present disclosure provide a method for fabricating a mask, including obtaining a target pattern to be imaged onto a substrate, providing a first scattering bar and a second scattering bar adjacent to consecutive edges of the target pattern, identifying a first length of the first scattering bar and a second length of the second scattering bar, connecting the first scattering bar and the second scattering bar when any of the first length and the second length is smaller than a predetermined value, identifying a separation between the first scattering bar and the second scattering bar subsequent to identifying the first length and the second length, disposing the first scattering bar and the second scattering bar in a first fashion when the separation is equal to zero, and disposing the first scattering bar and the second scattering bar in a second fashion when the separation is greater than zero.

Abstract: A method of generating an integrated circuit includes: receiving, by a processor, a first IC design layout; replacing, by the processor, a specific region in the first IC design layout with a first difference region; performing, by the processor, an inverse lithography technology process upon a junction region between the first difference region and the first IC design layout to generate a mask data; and causing the IC to be fabricated according to the mask data.

Abstract: Present disclosure provide a method for fabricating a mask, including obtaining a target pattern to be imaged onto a substrate, providing a first scattering bar and a second scattering bar adjacent to consecutive edges of the target pattern, identifying a first length of the first scattering bar and a second length of the second scattering bar, connecting the first scattering bar and the second scattering bar when any of the first length and the second length is smaller than a predetermined value, identifying a separation between the first scattering bar and the second scattering bar subsequent to identifying the first length and the second length, disposing the first scattering bar and the second scattering bar in a first fashion when the separation is equal to zero, and disposing the first scattering bar and the second scattering bar in a second fashion when the separation is greater than zero.